Discrete POWER & Signal
Technologies
MMBD4148 / SE / CC / CA
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CONNECTION |
DIAGRAMS |
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5H |
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4148 |
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4148SE |
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2 NC |
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1 |
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2 |
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1 |
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2 |
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4148CC |
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4148CA |
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SOT-23 |
1 |
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MARKING |
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MMBD4148 |
5H |
MMBD4148CA D6 |
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1 |
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1 |
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2 |
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MMBD4148CC |
D5 |
MMBD4148SE D4 |
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High Conductance Ultra Fast Diode
Sourced from Process 1P. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol |
Parameter |
Value |
Units |
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WIV |
Working Inverse Voltage |
75 |
V |
IO |
Average Rectified Current |
200 |
mA |
IF |
DC Forward Current |
600 |
mA |
if |
Recurrent Peak Forward Current |
700 |
mA |
if(surge) |
Peak Forward Surge Current |
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Pulse width = 1.0 second |
1.0 |
A |
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Pulse width = 1.0 microsecond |
2.0 |
A |
Tstg |
Storage Temperature Range |
-55 to +150 |
°C |
TJ |
Operating Junction Temperature |
150 |
°C |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol |
Characteristic |
Max |
Units |
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MMBD4148/SE/CC/CA* |
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PD |
Total Device Dissipation |
350 |
mW |
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Derate above 25°C |
2.8 |
mW/°C |
RθJA |
Thermal Resistance, Junction to Ambient |
357 |
°C/W |
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
CA / CC / SE / MMBD4148
ã 1997 Fairchild Semiconductor Corporation
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