Discrete POWER & Signal
Technologies
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PN100 |
MMBT100 |
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PN100A |
MMBT100A |
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C |
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E |
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C |
B |
TO-92 |
SOT-23 |
B |
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E |
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Mark: NA / NA1 |
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NPN General Purpose Amplifier |
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This device is designed for general purpose amplifier applications |
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at collector currents to 300 mA. Sourced from Process 10. |
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Absolute Maximum Ratings* TA=25°C unless otherwise noted |
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Symbol |
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Parameter |
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Value |
Units |
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VCEO |
Collector-Emitter Voltage |
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45 |
V |
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VCBO |
Collector-Base Voltage |
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75 |
V |
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VEBO |
Emitter-Base Voltage |
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6.0 |
V |
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IC |
Collector Current - Continuous |
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500 |
mA |
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TJ, Tstg |
Operating and Storage Junction Temperature Range |
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-55 to +150 |
°C |
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*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics |
TA= 25°C unless otherwise noted |
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Symbol |
Characteristic |
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Max |
Units |
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PN100A |
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*MMBT100A |
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PD |
Total Device Dissipation |
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625 |
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350 |
mW |
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Derate above 25°C |
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5.0 |
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2.8 |
mW/°C |
RθJC |
Thermal Resistance, Junction to Case |
83.3 |
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°C/W |
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RθJA |
Thermal Resistance, Junction to Ambient |
200 |
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357 |
°C/W |
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*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
MMBT100A / PN100A / MMBT100 / PN100
ã 1997 Fairchild Semiconductor Corporation
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