Fairchild Semiconductor MMBD1503, MMBD1503A, MMBD1501, MMBD1501A, MMBD1504A Datasheet

Discrete POWER & Signal

Technologies

MMBD1501/A / 1503/A / 1504/A / 1505/A

						3
															CONNECTION						DIAGRAMS
					11
												1501				3													1503
																					3
3
				1				2									2 NC
												1									1								2
		2		MARKING								1504				3					3								1505
SOT-23		MMBD1501		11		MMBD1501A					A11
	1	MMBD1503		13		MMBD1503A					A13
		MMBD1504		14		MMBD1504A					A14	1				2					1								2
		MMBD1505		15		MMBD1505A					A15

High Conductance Low Leakage Diode

Sourced from Process 1L.

Absolute Maximum Ratings*		TA = 25°C unless otherwise noted
Symbol	Parameter		Value	Units
WIV	Working Inverse Voltage		180	V
IO	Average Rectified Current		200	mA
IF	DC Forward Current		600	mA
if	Recurrent Peak Forward Current		700	mA
if(surge)	Peak Forward Surge Current
	Pulse width = 1.0 second		1.0	A
	Pulse width = 1.0 microsecond		2.0	A
Tstg	Storage Temperature Range		-55 to +150	°C
TJ	Operating Junction Temperature		150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics		TA = 25°C unless otherwise noted
Symbol	Characteristic		Max	Units
			MMBD1501/A/ 1503-1505/A*
PD	Total Device Dissipation		350	mW
	Derate above 25°C		2.8	mW/°C
RθJA	Thermal Resistance, Junction to Ambient		357	°C/W

*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2

1505/A / 1504/A / 1503/A / MMBD1501/A

ã 1997 Fairchild Semiconductor Corporation

High Conductance Low Leakage Diode

(continued)

Electrical Characteristics		TA = 25°C unless otherwise noted
Symbol	Parameter		Test Conditions	Min	Max	Units
BV	Breakdown Voltage		IR = 5.0 μA	200		V
IR	Reverse Current		VR = 125 V		1.0	nA
			VR = 125 V, TA = 150°C		3.0	μA
			VR = 180 V		10	nA
			°		5.0	μ	A
			VR = 180 V, TA = 150 C
VF	Forward Voltage		IF = 1.0 mA	620	720	mV
			IF = 10 mA	720	830	mV
			IF = 50 mA	800	890	mV
			IF = 100 mA	830	930	mV
			IF = 200 mA	0.87	1.1	V
			IF = 300 mA	0.9	1.15	V
CO	Diode Capacitance		VR = 0, f = 1.0 MHz		4.0	pF

Typical Characteristics

REVERSE VOLTAGE vs REVERSE CURRENT BV - 3.0 to 100 uA

(V)	325
		Ta= 25°C
VOLTAGE	300
REVERSE-
	275
R
V	250
			5		10						20		30		50		100
	3

IR - REVERSE CURRENT (uA)

REVERSE CURRENT vs REVERSE VOLTAGE

(nA)		IR - 130 - 205 Volts
	3
	Ta= 25°C
CURRENT
	2
- REVERSE	1
R 0					205
I	130	150	170	190

VR - REVERSE VOLTAGE (V)

GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature

FORWARD VOLTAGE vs FORWARD CURRENT VF - 1 to 100 uA

(mV)	550	Ta= 25°C
VOLTAGE	500
- FORWARD	450
	400
F
F
VV	350
		2	3	5	10	20	30	50	100
	1

IF - FORWARD CURRENT (uA)

FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA

(mV)	800	Ta= 25°C
	750
VOLTAGE
	700
	650
FORWARD
	600
	550
-
F
F
V	500		0.2	0.3	0.5	1	2	3	5	10
	0.1

IF - FORWARD CURRENT (mA)

1505/A / 1504/A / 1503/A / MMBD1501/A