MOC206-M
SMALL OUTLINE OPTOCOUPLERS
MOC205-M MOC206-M MOC207-M MOC208-M
DESCRIPTION
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a
monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic
package. They are ideally suited for high density applications, and eliminate the need for
through - the - board mounting.
FEATURES
•U.L. Recognized (File #E90700, Volume 2)
• VDE Recognized (File #136616) (add option "V" for VDE approval, i.e, MOC205V-M)
• Closely Matched Current Transfer Ratios
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• Minimum BV
• Standard SOIC-8 Footprint, with 0.050" Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 V
of 70 Volts Guaranteed
CEO
AC(rms)
Guaranteed
TRANSISTOR OUTPUT
ANODE
CATHODE
1
2
8
N/C
7
BASE
APPLICATIONS
•Feedback Control Circuits
• Interfacing and coupling systems of different potentials and impedances
• General Purpose Switching Circuits
• Monitor and Detection Circuits
3
N/C
N/C
4 5
COLLECTOR
6
EMITTER
© 2003 Fairchild Semiconductor Corporation
Page 1 of 10
4/10/03
SMALL OUTLINE OPTOCOUPLERS
TRANSISTOR OUTPUT
MOC205-M MOC206-M MOC207-M MOC208-M
ABSOLUTE MAXIMUM RATINGS (T
= 25°C Unless otherwise specified)
A
Rating Symbol Value Unit
EMITTER
I
F
V
I
F
(pk)
V
R
P
D
CEO
60 mA
1.0 A
6.0 V
90
0.8
mW
mW/°C
70 V
Forward Current - Continuous
Forward Current - Peak (PW = 100 µs, 120 pps)
Reverse Voltage
LED Power Dissipation @ T
= 25°C
A
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector-Base Voltage
Collector Current-Continuous
Detector Power Dissipation @ T
Derate above 25°C
= 25°C
A
V
V
ECO
CBO
I
C
P
D
7.0 V
70 V
150 mA
150
1.76
mW
mW/°C
TOTAL DEVICE
Input-Output Isolation Voltage (1,2,3)
(f = 60 Hz, t = 1 min.)
Total Device Power Dissipation @ T
= 25°C
A
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
V
ISO
P
D
T
A
T
stg
2500 Vac(rms)
250
2.94
mW
mW/°C
-40 to +100 °C
-40 to +150 °C
© 2003 Fairchild Semiconductor Corporation
Page 2 of 10
4/10/03
SMALL OUTLINE OPTOCOUPLERS
TRANSISTOR OUTPUT
MOC205-M MOC206-M MOC207-M MOC208-M
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
A
Parameter Test Conditions Symbol Min Typ** Max Unit
EMITTER
(I
Input Forward Voltage
Reverse Leakage Current
Input Capacitance
= 10 mA) V
F
(V
= 6.0 V) I
R
F
R
C
IN
— 1.15 1.5 V
— 0.001 100 µA
—18— pF
DETECTOR
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Capacitance
= 10 V, T
(V
CE
(V
= 10 V, T
CE
(f = 1.0 MHz, V
= 25°C)
A
= 100°C)
A
(I
= 100 µA) BV
C
(I
= 100 µA) BV
E
= 0) C
CE
I
CEO1
I
CEO2
CEO
ECO
CE
—
—
1.0
1.0
50
—
nA
µA
70 100 — V
7.0 10 — V
— 7.0 — pF
COUPLED
Collector-Output Current
(4)
MOC205-M
MOC206-M
MOC207-M
MOC208-M
Isolation Surge Voltage
Isolation Resistance
(1,2,3)
(2)
Collector-Emitter Saturation Voltage
Isolation Capacitance
(2)
Tu r n-On Time
Tu r n-Off Time
Rise Time
Fall Time
(I
= 10 mA, V
F
= 10 V)
CE
(f = 60 Hz AC Peak, t = 1 min.)
(V = 500 V)
(I
= 2 mA, I
C
= 10 mA) V
F
(V = 0 V, f = 1 MHz)
(I
= 2.0 mA, V
C
R
L
= 2.0 mA, V
(I
C
R
L
(I
= 2.0 mA, V
C
R
L
= 2.0 mA, V
(I
C
R
L
= 100 Ω ) (Fig. 6)
= 100 Ω ) (Fig. 6)
= 100 Ω ) (Fig. 6)
= 100 Ω ) (Fig. 6)
= 10 V,
CC
= 10 V,
CC
= 10 V,
CC
= 10 V,
CC
CTR
V
ISO
R
ISO
CE (sat)
C
ISO
t
on
t
off
t
r
t
f
40
63
100
40
—
—
—
—
2500 — — Vac(rms)
11
10
—— Ω
——0.4 V
— 0.2 — pF
— 7.5 — µs
— 5.7 — µs
— 3.2 — µs
— 4.7 — µs
80
125
200
125
%
** Typical values at T
1. Isolation Surge Voltage, V
= 25°C
A
, is an internal device dielectric breakdown rating.
ISO
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
rating of 2500 V
ISO
4. Current Transfer Ratio (CTR) = I
© 2003 Fairchild Semiconductor Corporation
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
/I
x 100%.
C
F
Page 3 of 10
AC(rms)
for t = 1 sec.
4/10/03
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