Fairchild Semiconductor MOC3062-M, MOC3063-M, MOC3162-M, MOC3061-M, MOC3163-M Datasheet

		6-PIN DIP ZERO-CROSS
	PHOTOTRIAC DRIVER OPTOCOUPLER
			(600V PEAK)
MOC3061-M	MOC3062-M MOC3063-M	MOC3162-M		MOC3163-M
	PACKAGE		SCHEMATIC
		ANODE 1		6	MAIN TERM.
6
	6	CATHODE 2		5	NC*
	1		ZERO
		N/C 3		4
			CROSSING		MAIN TERM.
	1		CIRCUIT
			*DO NOT CONNECT
			(TRIAC SUBSTRATE)

6

1

DESCRIPTION

The MOC306X-M and MOC316X-M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a triac in the interface of logic systems to equipment powered from 115/240 VAC lines, such as solid-state relays, industrial controls, motors, solenoids and consumer appliances, etc.

FEATURES

•Simplifies logic control of 115/240 VAC power

•Zero voltage crossing

•dv/dt of 1000 V/µs guaranteed (MOC316X-M),

–600 V/ms guaranteed (MOC306X-M)

•VDE recognized (File # 94766)

–ordering option V (e.g., MOC3063V-M)

•Underwriters Laboratories (UL) recognized (File #E90700, volume 2)

APPLICATIONS

•Solenoid/valve controls

•Static power switches

•Temperature controls

•AC motor starters

•Lighting controls

•AC motor drives

•E.M. contactors

•Solid state relays

© 2003 Fairchild Semiconductor Corporation

Page 1 of 10

5/29/03

6-PIN DIP ZERO-CROSS

PHOTOTRIAC DRIVER OPTOCOUPLER (600V PEAK)

MOC3061-M	MOC3062-M	MOC3063-M		MOC3162-M	MOC3163-M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameters			Symbol	Device	Value	Units
TOTAL DEVICE
Storage Temperature			TSTG	All	-40 to +150	°C
Operating Temperature			TOPR	All	-40 to +85	°C
Lead Solder Temperature			TSOL	All	260 for 10 sec	°C
Junction Temperature Range			TJ	All	-40 to +100	°C
Isolation Surge Voltage(4) (peak AC voltage, 60Hz, 1 sec duration)			VISO	All	7500	Vac(pk)
Total Device Power Dissipation @ 25°C			PD	All	250	mW
Derate above 25°C					2.94	mW/°C
EMITTER
Continuous Forward Current			IF	All	60	mA
Reverse Voltage			VR	All	6	V
Total Power Dissipation 25°C Ambient			PD	All	120	mW
Derate above 25°C					1.41	mW/°C
DETECTOR
Off-State Output Terminal Voltage			VDRM	All	600	V
Peak Repetitive Surge Current (PW = 100 µs, 120 pps)			ITSM	All	1	A
Total Power Dissipation @ 25°C Ambient			PD	All	150	mW
Derate above 25°C					1.76	mW/°C

© 2003 Fairchild Semiconductor Corporation

Page 2 of 10

5/29/03

6-PIN DIP ZERO-CROSS

PHOTOTRIAC DRIVER OPTOCOUPLER (600V PEAK)

MOC3061-M MOC3062-M

MOC3063-M

MOC3162-M

MOC3163-M

ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified)

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameters

Test Conditions

Symbol

Device

Min

Typ*

Max

Units

EMITTER

Input Forward Voltage

IF = 30 mA

VF

All

1.3

1.5

V

Reverse Leakage Current

VR = 6 V

IR

All

0.005

100

µA

DETECTOR

Peak Blocking Current, Either Direction

VDRM = 600V, IF = 0 (note 1)

IDRM1

MOC316X-M

10

100

nA

MOC306X-M

10

500

Critical Rate of Rise of Off-State Voltage

IF = 0 (figure 9, note 3)

dv/dt

MOC306X-M

600

1500

V/µs

MOC316X-M

1000

TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)

DC Characteristics

Test Conditions

Symbol

Device

Min

Typ*

Max

Units

MOC3061-M

15

LED Trigger Current

main terminal

MOC3062-M/

10

IFT

MOC3162-M

mA

(rated IFT)

Voltage = 3V (note 2)

MOC3063-M/

5

MOC3163-M

Peak On-State Voltage, Either Direction

ITM = 100 mA peak,

VTM

All

1.8

3

V

IF = rated IFT

Holding Current, Either Direction

IH

All

500

µA

ZERO CROSSING CHARACTERISTICS

Characteristics

Test Conditions

Symbol

Device

Min

Typ*

Max

Units

Inhibit Voltage (MT1-MT2 voltage

MOC3061-M/2M/3M

12

20

above which device will not

IF = Rated IFT

VINH

V

MOC3062-M/3M

12

15

trigger)

Leakage in Inhibited State

IF = Rated IFT,

IDRM2

All

150

500

µA

VDRM = 600V, off state

ISOLATION CHARACTERISTICS

Characteristics

Test Conditions

Symbol

Device

Min

Typ*

Max

Units

Isolation Voltage

f = 60 Hz, t = 1 sec

VISO

All

7500

V

*Typical values at TA = 25°C

Notes

1.Test voltage must be applied within dv/dt rating.

2.All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max IFT (15 mA for MOC3061-M, 10 mA for MOC3062-M & MOC3162-M, 5 mA for MOC3063-M & MOC3163-M) and absolute max IF (60 mA).

3.This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.

4.Isolation surge voltage, VISO, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

© 2003 Fairchild Semiconductor Corporation

Page 3 of 10

5/29/03