Fairchild Semiconductor MMBF4392, MMBF4391, MMBF4393, PN4392, PN4393 Datasheet

Discrete POWER & Signal

Technologies

PN4391	MMBF4391
PN4392	MMBF4392
PN4393	MMBF4393

		G
			D
G		TO-92	S
S	D	SOT-23
		Mark: 6J / 6K / 6G

N-Channel Switch

This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 51. See J111 for characteristics.

Absolute Maximum Ratings*		TA = 25°C unless otherwise noted
Symbol	Parameter		Value	Units
VDG	Drain-Gate Voltage		30	V
VGS	Gate-Source Voltage		- 30	V
IGF	Forward Gate Current		50	mA
TJ ,Tstg	Operating and Storage Junction Temperature Range		-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics		TA = 25°C unless otherwise noted
Symbol	Characteristic				Max		Units
				PN4391		*MMBF4391
PD	Total Device Dissipation			350		225	mW
	Derate above 25°C			2.8		1.8	mW/°C
RqJC	Thermal Resistance, Junction to Case			125			°C/W
RqJA	Thermal Resistance, Junction to Ambient			357		556	°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

MMBF4393 / MMBF4392 / MMBF4391 / PN4393 / PN4392 / PN4391

ã1997 Fairchild Semiconductor Corporation