Discrete POWER & Signal
Technologies
PN3640 MMBT3640
C
E
C |
TO-92 |
|
B E |
SOT-23 |
B |
|
Mark: 2J |
|
PNP Switching Transistor
This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See
PN4258 for characteristics.
Absolute Maximum Ratings* |
TA = 25°C unless otherwise noted |
|
|
|
Symbol |
Parameter |
|
Value |
Units |
|
|
|
|
|
VCEO |
Collector-Emitter Voltage |
|
12 |
V |
VCBO |
Collector-Base Voltage |
|
12 |
V |
|
|
|
|
|
VEBO |
Emitter-Base Voltage |
|
4.0 |
V |
IC |
Collector Current - Continuous |
|
200 |
mA |
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
|
|
|
|
|
|
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics |
TA = 25°C unless otherwise noted |
|
|
|
||
Symbol |
Characteristic |
|
Max |
Units |
||
|
|
|
|
|
|
|
|
|
|
|
PN3640 |
*MMBT3640 |
|
PD |
Total Device Dissipation |
|
|
350 |
225 |
mW |
|
Derate above 25°C |
|
|
2.8 |
1.8 |
mW/°C |
RqJC |
Thermal Resistance, Junction to Case |
125 |
|
°C/W |
||
|
|
|
|
|
||
RqJA |
Thermal Resistance, Junction to Ambient |
357 |
556 |
°C/W |
||
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
MMBT3640 / PN3640
ã 1997 Fairchild Semiconductor Corporation
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