Fairchild Semiconductor MMBZ5257B, MMBZ5255B, MMBZ5251B, MMBZ5256B, MMBZ5253B Datasheet

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Fairchild Semiconductor MMBZ5257B, MMBZ5255B, MMBZ5251B, MMBZ5256B, MMBZ5253B Datasheet

MMBZ5226B - MMBZ5257B Series Zeners

Tolerance: B = 5%

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Parameter

 

Value

Units

 

 

 

 

Storage Temperature Range

 

-55 to +150

° C

 

 

 

 

Maximum Junction Operating Temperature

 

+ 150

° C

 

 

 

 

Total Device Dissipation

 

350

mW

Derate above 25° C

 

2.8

mW/° C

*These ratings are limiting values above which the serviceability of the diode may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics

TA = 25°C unless otherwise noted

3

2

1

SOT-23

CONNECTION

DIAGRAM

 

3

1

2 NC

 

Device

Mark

VZ

ZZ @

IZT

ZZK @

IZK

VR @

IR

(V)

()

(mA)

()

(mA)

(V)

(µ A)

 

 

 

 

 

 

 

 

 

 

 

MMBZ 5226B

8A

3.3

28

20

1,600

0.25

1.0

25

MMBZ 5227B

8B

3.6

24

20

1,700

0.25

1.0

15

MMBZ 5228B

8C

3.9

23

20

1,900

0.25

1.0

10

MMBZ 5229B

8D

4.3

22

20

1,000

0.25

1.0

5.0

MMBZ 5230B

8E

4.7

19

20

1,900

0.25

2.0

5.0

MMBZ 5231B

8F

5.1

17

20

1,600

0.25

2.0

5.0

MMBZ 5232B

8G

5.6

11

20

1,600

0.25

3.0

5.0

MMBZ 5233B

8H

6.0

7.0

20

1,600

0.25

3.5

5.0

MMBZ 5234B

8J

6.2

7.0

20

1,000

0.25

4.0

5.0

MMBZ 5235B

8K

6.8

5.0

20

750

0.25

5.0

3.0

MMBZ 5236B

8L

7.5

6.0

20

500

0.25

6.0

3.0

MMBZ 5237B

8M

8.2

8.0

20

500

0.25

6.5

3.0

MMBZ 5238B

8N

8.7

8.0

20

600

0.25

6.5

3.0

MMBZ 5239B

8P

9.1

10

20

600

0.25

7.0

3.0

MMBZ 5240B

8Q

10

17

20

600

0.25

8.0

3.0

MMBZ 5241B

8R

11

22

20

600

0.25

8.4

2.0

MMBZ 5242B

8S

12

30

20

600

0.25

9.1

1.0

VF Foward

Voltage = 0.9

V Maximum @ IF

= 10 mA for all MMBZ 5200 series

 

 

 

NOTE: National preferred devices in BOLD

Series MMBZ5257B - MMBZ5226B

2000 Fairchild Semiconductor International

MMBZ5226B-MMBZ5257B Rev A1

MMBZ Series Zeners

(continued)

Electrical Characteristics

(continued) TA = 25°C unless otherwise noted

 

 

Device

Mark

VZ

ZZ

IZT

ZZK

IZK

VR

IR

(V)

()

(mA)

()

(mA)

(V)

(nA)

 

 

 

 

 

 

 

 

 

 

 

MMBZ 5243B

8T

13

13

9.5

600

0.25

9.9

500

MMBZ 5244B

8U

14

15

9.0

600

0.25

10

100

MMBZ 5245B

8V

15

16

8.5

600

0.25

11

100

MMBZ 5246B

8W

16

17

7.8

600

0.25

12

100

MMBZ 5247B

8X

17

19

7.4

600

0.25

13

100

MMBZ 5248B

8Y

18

21

7.0

600

0.25

14

100

MMBZ 5249B

8Z

19

23

6.6

600

0.25

14

100

MMBZ 5250B

81A

20

25

6.2

600

0.25

15

100

MMBZ 5251B

81B

22

29

5.6

600

0.25

17

100

MMBZ 5252B

81C

24

33

5.2

600

0.25

18

100

MMBZ 5253B

81D

25

35

5.0

600

0.25

19

100

MMBZ 5254B

81E

27

41

4.6

600

0.25

21

100

MMBZ 5255B

81F

28

44

4.5

600

0.25

21

100

MMBZ 5256B

81G

30

49

4.2

600

0.25

23

100

MMBZ 5257B

81H

33

58

3.8

700

0.25

25

100

VF Foward

Voltage = 0.9

V Maximum @ IF

= 10 mA for all MMBZ 5200 series

 

 

 

NOTE: National preferred devices in BOLD

Series MMBZ5257B - MMBZ5226B

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