Fairchild Semiconductor MPSA56, MMBTA56, PZTA56 Datasheet

Discrete POWER & Signal

Technologies

	MPSA56		MMBTA56		PZTA56
			C		C
				E		E
						C
C		TO-92	SOT-23	B	SOT-223	B
B	E
			Mark: 2G
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 73.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol			Parameter		Value	Units
VCES		Collector-Emitter Voltage			80	V
VCBO		Collector-Base Voltage			80	V
VEBO		Emitter-Base Voltage			4.0	V
IC		Collector Current - Continuous			500	mA
TJ, Tstg		Operating and Storage Junction Temperature Range			-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics		TA = 25°C unless otherwise noted
Symbol	Characteristic			Max		Units
			MPSA56	*MMBTA56	**PZTA56
PD	Total Device Dissipation		625	350	1,000	mW
	Derate above 25°C		5.0	2.8	8.0	mW/°C
RθJC	Thermal Resistance, Junction to Case		83.3			°C/W
RθJA	Thermal Resistance, Junction to Ambient		200	357	125	°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

PZTA56 / MMBTA56 / MPSA56

ã1997 Fairchild Semiconductor Corporation

PNP General Purpose Amplifier

(continued)

Electrical Characteristics			TA = 25°C unless otherwise noted
Symbol		Parameter		Test Conditions		Min		Max		Units
OFF CHARACTERISTICS
V(BR)CEO		Collector-Emitter Breakdown Voltage*		IC = 1.0 mA, IB = 0		80				V
V(BR)CBO		Collector-Base Breakdown Voltage		IC = 100 μA, IE = 0		80				V
V(BR)EBO		Emitter-Base Breakdown Voltage		IE = 100 μA, IC = 0		4.0				V
ICEO		Collector-Cutoff Current		VCE = 60 V, IB = 0				0.1		μA
ICBO		Collector-Cutoff Current		VCB = 80 V, IE = 0				0.1		μA
ON CHARACTERISTICS
hFE		DC Current Gain		IC = 10 mA, VCE = 1.0 V		100
				IC = 100 mA, VCE = 1.0 V		100
VCE(sat)		Collector-Emitter Saturation Voltage		IC = 100 mA, IB = 10 mA				0.25		V
VBE(on)		Base-Emitter On Voltage		IC = 100 mA, VCE = 1.0 V				1.2		V
SMALL SIGNAL CHARACTERISTICS
fT		Current Gain - Bandwidth Product		IC = 100 mA, VCE = 1.0 V,		50				MHz
				f = 100 MHz
*Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%
Spice Model
PNP (Is=12.27p Xti=3 Eg=1.11 Vaf=100 Bf=91.63 Ne=1.531 Ise=12.27p					Ikf=1.009 Xtb=1.5			Br=1.287		Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=48.28p Mjc=.5615 Vjc=.75 Fc=.5 Cje=106.7p Mje=.5168 Vje=.75 Tr=496.3n Tf=865.8p
Itf=.2 Vtf=2		Xtf=.8 Rb=10)

Typical Characteristics

Typical Pulsed Current Gain

GAIN		vs Collector Current
	300
CURRENT			VCE = 1V
	250	125 °C
	200
PULSED
	150	25 °C
	100
- TYPICAL		- 40 ºC
	50
FE	0.001	0.01	0.1
h		I C - COLLECTOR CURRENT (A)

Collector-Emitter Saturation

	(V)	Voltage vs Collector Current
	VOLTAGE
		0.8
		β	= 10
		0.6
	EMITTER
		0.4
	- COLLECTOR				25 °C
		0.2			- 40 ºC
					125 °C
		0
	T				100
	CESA	10
			I	C	- COLLECTOR CURRENT (mA)
	V

PZTA56 / MMBTA56 / MPSA56