Fairchild Semiconductor MMBTA64, MPSA64, PZTA64 Datasheet

Discrete POWER & Signal

Technologies

	MPSA64		MMBTA64		PZTA64
			C		C
				E		E
						C
C		TO-92	SOT-23	B	SOT-223	B
B	E
			Mark: 2V
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
Absolute Maximum Ratings*			TA = 25°C unless otherwise noted
Symbol		Parameter			Value	Units
VCES		Collector-Emitter Voltage			30	V
VCBO		Collector-Base Voltage			30	V
VEBO		Emitter-Base Voltage			10	V
IC		Collector Current - Continuous			1.2	A
TJ, Tstg		Operating and Storage Junction Temperature Range			-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics		TA = 25°C unless otherwise noted
Symbol	Characteristic			Max		Units
			MPSA64	*MMBTA64	**PZTA64
PD	Total Device Dissipation		625	350	1,000	mW
	Derate above 25°C		5.0	2.8	8.0	mW/°C
RqJC	Thermal Resistance, Junction to Case		83.3			°C/W
RqJA	Thermal Resistance, Junction to Ambient		200	357	125	°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

PZTA64 / MMBTA64 / MPSA64

ã 1997 Fairchild Semiconductor Corporation

A64, Rev A