Fairchild Semiconductor MMBF4118, MMBF4117, MMBF4119, PN4118, PN4119 Datasheet

Discrete POWER & Signal

Technologies

		PN4117	MMBF4117
		PN4118	MMBF4118
		PN4119	MMBF4119
			G
			D
G	S	TO-92	SOT-23 S
		D

Mark: 61A / 61C / 61E

N-Channel Switch

This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal sources. Sourced from Process 53.

Absolute Maximum Ratings*		TA = 25°C unless otherwise noted
Symbol	Parameter		Value	Units
VDG	Drain-Gate Voltage		40	V
VGS	Gate-Source Voltage		- 40	V
IGF	Forward Gate Current		50	mA
TJ ,Tstg	Operating and Storage Junction Temperature Range		-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics		TA = 25°C unless otherwise noted
Symbol	Characteristic				Max		Units
				PN4117		*MMBF4117
PD	Total Device Dissipation			350		225	mW
	Derate above 25°C			2.8		1.8	mW/°C
RθJC	Thermal Resistance, Junction to Case			125			°C/W
RθJA	Thermal Resistance, Junction to Ambient			357		556	°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

MMBF4119 / MMBF4118 / MMBF4117 / PN4119 / PN4118 / PN4117

ã 1997 Fairchild Semiconductor Corporation

N-Channel Switch

(continued)

Electrical Characteristics		TA = 25°C unless otherwise noted
Symbol	Parameter		Test Conditions		Min	Max	Units
OFF CHARACTERISTICS
V(BR)GSS	Gate-Source Breakdown Voltage		IG = 1.0 μA, VDS = 0		- 40		V
IGSS	Gate Reverse Current		VGS = 20 V, VDS = 0			- 10	pA
			VGS = 20 V, VDS = 0, TA = 150°C			- 25	nA
VGS(off)	Gate-Source Cutoff Voltage		VDS = 10 V, ID = 1.0 nA	PN4117	- 0.6	- 1.8	V
				PN4118	- 1.0	- 3.0	V
				PN4119	- 2.0	- 6.0	V
ON CHARACTERISTICS
IDSS	Zero-Gate Voltage Drain Current*		VDS = 10 V, VGS = 0	PN4117	30	90	μA
				PN4118	80	240	μA
				PN4119	200	600	μA
SMALL-SIGNAL CHARACTERISTICS
gfs	Common-Source Forward		VDS = 10 V VGS = 0, f= 1.0 kHz				μmhos
	Transconductance			PN4117	70	210
				PN4118	80	250	μmhos
				PN4119	100	330	μmhos
goss	Common-Source Output Conductance		VDS = 10 V VGS = 0, f= 1.0 kHz				μmhos
				PN4117		3.0
				PN4118		5.0	μmhos
				PN4119		10	μmhos
Re(yfs)	Common-Source Forwad		VDS = 10 V, VGS = 0, f= 30 MHz				μmhos
	Transconductance			PN4117	60
				PN4118	70		μmhos
				PN4119	90		μmhos
Ciss	Input Capacitance		VDS = 10 V, VGS = 0, f= 1.0 kHz			3.0	pF
Crss	Reverse Transfer Capacitance		VDS = 10 V, VGS = 0, f= 1.0 MHz,			1.5	pF

*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 1.0%

MMBF4119 / MMBF4118 / MMBF4117 / PN4119 / PN4118 / PN4117

N-Channel Switch

(continued)

Typical Characteristics

Parameter Interactions		Transfer Characteristics

Transfer Characteristics

Transfer Characteristics

Transfer Characteristics	Transfer Characteristics

MMBF4119 / MMBF4118 / MMBF4117 / PN4119 / PN4118 / PN4117

N-Channel Switch

(continued)

Typical Characteristics (continued)

Leakage Current vs. Voltage

Common Drain-Source

Output Conductance	Capacitance vs. Voltage
vs. Drain Current

Transconductance vs. Drain Current		Noise Voltage vs. Frequency

MMBF4119 / MMBF4118 / MMBF4117 / PN4119 / PN4118 / PN4117