Philips BYV27-600, BYV27-500, BYV27-50, BYV27-400, BYV27-300 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns

M3D116

BYV27 series

Ultra fast low-loss

controlled avalanche rectifiers

Product specification

1997 Nov 24

Supersedes data of 1996 Oct 02

File under Discrete Semiconductors, SC01

Philips Semiconductors	Product specification

Ultra fast low-loss

BYV27 series

controlled avalanche rectifiers

FEATURES

∙Glass passivated

∙High maximum operating temperature

∙Low leakage current

∙Excellent stability

∙Guaranteed avalanche energy absorption capability

∙Available in ammo-pack.

	DESCRIPTION	This package is hermetically sealed
	Rugged glass SOD57 package, using	and fatigue free as coefficients of
		expansion of all used parts are
	a high temperature alloyed
		matched.
	construction.
	k	a
		MAM047

Fig.1 Simplified outline (SOD57) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VRRM	repetitive peak reverse voltage
	BYV27-50		−	50	V
	BYV27-100		−	100	V
	BYV27-150		−	150	V
	BYV27-200		−	200	V
	BYV27-300		−	300	V
	BYV27-400		−	400	V
	BYV27-500		−	500	V
	BYV27-600		−	600	V
VR	continuous reverse voltage
	BYV27-50		−	50	V
	BYV27-100		−	100	V
	BYV27-150		−	150	V
	BYV27-200		−	200	V
	BYV27-300		−	300	V
	BYV27-400		−	400	V
	BYV27-500		−	500	V
	BYV27-600		−	600	V
IF(AV)	average forward current	Ttp = 85 °C; lead length = 10 mm;
	BYV27-50 to 200	see Figs 2, 3 and 4;	−	2.0	A
	BYV27-300 and 400	averaged over any 20 ms period;	−	1.9	A
		see also Figs 14, 15 and 16
	BYV27-500 and 600		−	1.6	A
IF(AV)	average forward current	Tamb = 60 °C; printed-circuit board
	BYV27-50 to 200	mounting (see Fig. 25);	−	1.30	A
	BYV27-300 and 400	see Figs 5, 6 and 7;	−	1.25	A
		averaged over any 20 ms period;
	BYV27-500 and 600		−	1.10	A
		see also Figs 14, 15 and 16

1997 Nov 24

2

Philips Semiconductors	Product specification

Ultra fast low-loss

BYV27 series

controlled avalanche rectifiers

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
IFRM	repetitive peak forward current	Ttp = 85 °C; see Figs 8, 9 and 10
	BYV27-50 to 400		−	20	A
	BYV27-500 and 600		−	16	A
IFRM	repetitive peak forward current	Tamb = 60 °C;
	BYV27-50 to 200	see Figs 11, 12 and 13	−	14	A
	BYV27-300 and 400		−	13	A
	BYV27-500 and 600		−	11	A
IFSM	non-repetitive peak forward current	t = 10 ms half sine wave;
	BYV27-50 to 400	Tj = Tj max prior to surge;	−	50	A
	BYV27-500 and 600	VR = VRRMmax	−	40	A
ERSM	non-repetitive peak reverse	L = 120 mH; Tj = Tj max prior to	−	20	mJ
	avalanche energy	surge; inductive load switched off
Tstg	storage temperature		−65	+175	°C
Tj	junction temperature	see Fig. 17	−65	+175	°C

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
VF	forward voltage	IF = 2 A; Tj = Tj max;
	BYV27-50 to 200	see Figs 18, 19 and 20	−	−	0.78	V
	BYV27-300 and 400		−	−	0.82	V
	BYV27-500 and 600		−	−	1.00	V
VF	forward voltage	IF = 2 A;
	BYV27-50 to 200	see Figs 18, 19 and 20	−	−	0.98	V
	BYV27-300 and 400		−	−	1.05	V
	BYV27-500 and 600		−	−	1.25	V
V(BR)R	reverse avalanche breakdown	IR = 0.1 mA
	voltage
	BYV27-50		55	−	−	V
	BYV27-100		110	−	−	V
	BYV27-150		165	−	−	V
	BYV27-200		220	−	−	V
	BYV27-300		330	−	−	V
	BYV27-400		440	−	−	V
	BYV27-500		560	−	−	V
	BYV27-600		675	−	−	V
IR	reverse current	VR = VRRMmax;	−	−	5	μA
		see Fig. 21
		VR = VRRMmax;	−	−	150	μA
		Tj = 165 °C; see Fig. 21

1997 Nov 24

3

Philips Semiconductors	Product specification

Ultra fast low-loss

BYV27 series

controlled avalanche rectifiers

SYMBOL				PARAMETER	CONDITIONS		MIN.		TYP.	MAX.	UNIT
trr				reverse recovery time	when switched from
				BYV27-50 to 200	IF = 0.5 A to IR = 1 A;		-		-	25	ns
				BYV27-300 to 600	measured at IR = 0.25 A;		-		-	50	ns
					see Fig. 27
Cd				diode capacitance	f = 1 MHz; VR = 0;
				BYV27-50 to 200	see Figs 22, 23 and 24		-		100	-	pF
				BYV27-300 and 400			-		80	-	pF
				BYV27-500 and 600			-		65	-	pF
	dIR			maximum slope of reverse recovery	when switched from		-		-	4	A/ms
	--------			current	IF = 1 A to VR ³ 30 V
	dt				and dIF/dt = -1 A/ms;
					see Fig. 26
THERMAL CHARACTERISTICS
SYMBOL				PARAMETER		CONDITIONS				VALUE	UNIT
Rth j-tp				thermal resistance from junction to tie-point		lead length = 10 mm				46	K/W
Rth j-a				thermal resistance from junction to ambient		note 1				100	K/W

Note

1.Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ³40 mm, see Fig. 25. For more information please refer to the ‘General Part of Handbook SC01’.

1997 Nov 24

4

Philips Semiconductors	Product specification

Ultra fast low-loss

BYV27 series

controlled avalanche rectifiers

GRAPHICAL DATA

2.0															MGA849
handbook, halfpage
I F(AV)
(A)
				20			15				10 lead length (mm)
1.6
1.2
0.8
0.4
0
0									100			T (oC)			200
												tp

BYV27-50 to 200

a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application.

Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).

MLC293

I F(AV)	2.0
(A)
	1.6							lead length 10 mm
	1.2
	0.8
	0.4
	0

0	100	T (oC)	200
		tp
BYV27-300 and 400
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.3	Maximum permissible average forward

current as a function of tie-point temperature (including losses due to reverse leakage).

MGK648

3 handbook, halfpage

IF(AV)

(A)

lead length 10 mm

2

1

0

0	100	Ttp (°C)	200

BYV27-500 and 600

a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application.

Fig.4 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).

MGA848

2.0 handbook, halfpage

IF(AV)

(A)

1.6

1.2

0.8

0.4

0

0

100

Tamb (oC)

200

BYV27-50 to 200

a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig. 25. Switched mode application.

Fig.5 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).

1997 Nov 24

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