OKI MSM51V18165F-70TS-K, MSM51V18165F-70TS-L, MSM51V18165F-70JS, MSM51V18165F-50TS-K, MSM51V18165F-50TS-L Datasheet

Semiconductor

This version:Oct.1999

MSM51V18165F

1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION

The MSM51V18165F is a 1,048,576-word ´ 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V18165F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM51V18165F is available in a 42-pin plastic SOJ or 50/44-pin plastic TSOP.

FEATURES

·1,048,576-word ´ 16-bit configuration

·Single 3.3V power supply, ±0.3V tolerance

·	Input	: LVTTL compatible, low input capacitance
·	Output	: LVTTL compatible, 3-state
·	Refresh	: 1024 cycles/16ms

·Fast page mode with EDO, read modify write capability

·CAS before RAS refresh, hidden refresh, RAS-only refresh capability

·CAS before RAS self-refresh capability

·Package options:

42-pin 400mil plastic SOJ	(SOJ42-P-400-1.27)	(Product : MSM51V18165F-xxJS)
50/44-pin 400mil plastic TSOP	(TSOPII50/44-P-400-0.80-K)	(Product : MSM51V18165F-xxTS-K)
	(TSOPII50/44-P-400-0.80-L)	(Product : MSM51V18165F-xxTS-L)
		xx indicates speed rank.

PRODUCT FAMILY

Family		Access Time (Max.)					Cycle Time	Power Dissipation
	tRAC		tAA	tCAC		tOEA	(Min.)	Operating (Max.)	Standby (Max.)
	50ns		25ns	13ns		13ns	84ns	324mW
MSM51V18165F	60ns		30ns	15ns		15ns	104ns	288mW	1.8mW
	70ns		35ns	20ns		20ns	124ns	252mW

No.

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PIN CONFIGRATION (TOP VIEW)

VCC 1	42	VSS
DQ1 2	41	DQ16
DQ2 3	40	DQ15
DQ3 4	39	DQ14
DQ4 5	38	DQ13
VCC 6	37	VSS
DQ5 7	36	DQ12
DQ6 8	35	DQ11
DQ7 9	34	DQ10
DQ8 10	33	DQ9
NC 11	32	NC
NC 12	31	LCAS
WE 13	30 UCAS
RAS 14	29	OE
NC 15	28	A9
NC 16	27	A8
A0 17	26	A7
A1 18	25	A6
A2 19	24	A5
A3 20	23	A4
VCC 21	22	VSS

42-Pin Plastic SOJ

VCC	1		50	VSS	VSS	50		1	VCC
DQ1	2		49	DQ16 DQ16		49		2	DQ1
DQ2	3		48	DQ15 DQ15		48		3	DQ2
DQ3	4		47	DQ14 DQ14		47		4	DQ3
DQ4	5		46	DQ13 DQ13		46		5	DQ4
VCC	6		45	VSS	VSS	45		6	VCC
DQ5	7		44	DQ12 DQ12		44		7	DQ5
DQ6	8		43	DQ11 DQ11		43		8	DQ6
DQ7	9		42	DQ10 DQ10		42		9	DQ7
DQ8	10		41	DQ9	DQ9	41		10	DQ8
				NC	NC
NC	11		40			40		11	NC

		NC			15				36		NC					NC		36			15			NC
		NC			16				35		LCAS				LCAS			35			16			NC
		WE			17				34		UCAS				UCAS			34				17		WE
	RAS				18				33		OE					OE		33			18			RAS
		NC			19				32		A9					A9		32			19			NC
		NC			20				31		A8					A8		31			20			NC
		A0			21				30		A7					A7		30			21			A0
		A1 22							29		A6					A6 29					22			A1
											A5													A2
		A2 23							28							A5 28					23
											A4												A3
		A3 24							27							A4 27					24
		VCC 25							26		VSS				VSS 26						25			VCC
				55/44-Pin Plastic TSOP												55/44-Pin Plastic TSOP
							(K Type)													(L Type)

Pin Name	Function
A0–A9	Address Input
RAS	Row Address Strobe
LCAS	Lower Byte Column Address Strobe
UCAS	Upper Byte Column Address Strobe
DQ1–DQ16	Data Input/Data Output
OE	Output Enable
WE	Write Enable
VCC	Power Supply (3.3V)
VSS	Ground (0V)
NC	No Connection

Note : The same power supply voltage must be provided to every VCC pin, and the same

GND voltage level must be provided to every VSS pin.

No.

2/14

BLOCK DIAGRAM

WE

OE

Timing

RAS

Generator

I/O

Controller

LCAS

Output

UCAS

I/O

8

Buffers

8

Controller

DQ1-DQ8

Column

10

Address

10

Column Decoders

8

Input

8

Buffers

Buffers

I/O

A0-A9

Internal

Refresh

Sense Amplifiers

16

Selector

16

Address

Control Clock

Counter

8

Input

8

Buffers

10

Row

10

Row

Address

DQ9-DQ16

Buffers

Deco-

Word

Memory

ders

Drivers

Cells

8

Output

8

Buffers

VCC

VSS

On Chip

VBB Generator

On Chip

IVCC Generator

FUNCTION TABLE

Input Pin

DQ Pin

Function Mode

RAS

LCAS

UCAS

WE

OE

DQ1-DQ8

DQ9-DQ16

H

*

*

*

*

High-Z

High-Z

Standby

L

H

H

*

*

High-Z

High-Z

Refresh

L

L

H

H

L

DOUT

High-Z

Lower Byte Read

L

H

L

H

L

High-Z

DOUT

Upper Byte Read

L

L

L

H

L

DOUT

DOUT

Word Read

L

L

H

L

H

DIN

Don’t Care

Lower Byte Write

L

H

L

L

H

Don’t Care

DIN

Upper Byte Write

L

L

L

L

H

DIN

DIN

Word Write

L

L

L

H

H

High-Z

High-Z

¾

* : “H” or “L”

No.

3/14

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Parameter	Symbol	Rating	Unit
Voltage on Any Pin Relative to VSS	VIN, VOUT	- 0.5 to VCC + 0.3	V
Voltage VCC Supply relative to VSS	VCC	- 0.5 to 4.6	V
Short Circuit Output Current	IOS	50	mA
Power Dissipation	PD*	1	W
Operating Temperature	Topr	0 to 70	°C
Storage Temperature	Tstg	- 55 to 150	°C

*: Ta = 25°C

Recommended Operating Conditions

(Ta = 0 °C to 70 °C)

	Parameter	Symbol	Min.	Typ.	Max.	Unit
	Power Supply Voltage	VCC	3.0	3.3	3.6	V
		VSS	0	0	0	V
	Input High Voltage	VIH	2.0	¾	VCC + 0.3*1	V
	Input Low Voltage	VIL	- 0.3*2	¾	0.8	V

Notes: *1. The input voltage is VCC + 1.0V when the pulse width is less than 20ns (the pulse width is with respect to the point at which VCC is applied).

*2. The input voltage is VSS - 1.0V when the pulse width is less than 20ns (the pulse width respect to the point at which VSS is applied).

Capacitance

(VCC = 3.3V ± 0.3V, Ta = 25°C, f=1MHz)

Parameter

Symbol

Typ.

Max.

Unit

Input Capacitance (A0 - A9)

CIN1

¾

5

pF

Input Capacitance

CIN2

¾

7

pF

(RAS, LCAS, UCAS, WE, OE)

Output Capacitance (DQ1 - DQ16)

CI/O

¾

7

pF

No.

4/14

DC Characteristics

(VCC = 3.3V ± 0.3V, Ta = 0°C to 70°C)

				MSM51V18165		MSM51V18165		MSM51V18165
	Parameter	Symbol	Condition	F-50		F-60		F-70		Unit	Note
				Min.	Max.	Min.	Max.	Min.	Max.
	Output High Voltage	VOH	IOH = -2.0mA	2.4	VCC	2.4	VCC	2.4	VCC	V
	Output Low Voltage	VOL	IOL = 2mA	0	0.4	0	0.4	0	0.4	V
	Input Leakage		0V £ VI £ VCC+0.3V;
		ILI	All other pins not	- 10	10	- 10	10	- 10	10	mA
	Current
			under test = 0V
	Output Leakage	ILO	DQ disable	- 10	10	- 10	10	- 10	10	mA
	Current		0V £ VO £ VCC
	Average Power		RAS, CAS cycling,
	Supply Current	ICC1		¾	90	¾	80	¾	70	mA	1,2
			tRC = Min.
	(Operating)
	Power Supply		RAS, CAS = VIH	¾	2	¾	2	¾	2
	Current	ICC2	RAS, CAS	¾	0.5	¾	0.5	¾	0.5	mA	1
	(Standby)		³ VCC - 0.2V
	Average Power		RAS cycling,
	Supply Current	ICC3	CAS = VIH,	¾	90	¾	80	¾	70	mA	1,2
	(RAS-only Refresh)		tRC = Min.
	Power Supply		RAS = VIH,
	Current	ICC5	CAS = VIL,	¾	5	¾	5	¾	5	mA	1
	(Standby)		DQ = enable
	Average Power		RAS = cycling,
	Supply Current	ICC6		¾	90	¾	80	¾	70	mA	1,2
	(CAS before RAS		CAS before RAS
	Refresh)
	Average Power		RAS = VIL,
	Supply Current	ICC7	CAS cycling,	¾	90	¾	80	¾	70	mA	1,3
	(Fast Page Mode)		tHPC = Min.

Notes: 1. ICC Max. is specified as ICC for output open condition.

2.The address can be changed once or less while RAS = VIL.

3.The address can be changed once or less while CAS = VIH.

No.

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