OKI MSM51V18165B-50TS-K, MSM51V18165BSL-70JS, MSM51V18165BSL-70TS-K, MSM51V18165BSL-60JS, MSM51V18165B-70TS-K Datasheet

¡SemiconductorSemiconductor MSM51V18165B/BSL

E2G0087-17-41

MSM51V18165B/BSL

1,048,576-Word ´ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION

TheMSM51V18165B/BSLisa1,048,576-word´ 16-bitdynamicRAMfabricatedinOki'ssilicon-gate CMOStechnology.TheMSM51V18165B/BSLachieveshighintegration,high-speedoperation,and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ double-layer metal CMOS process. The MSM51V18165B/BSL is available in a 42-pin plastic SOJ or 50/44-pin plastic TSOP. The MSM51V18165BSL (the self-refresh version) is specially designed for lower-power applications.

FEATURES

•1,048,576-word ´ 16-bit configuration

•Single 3.3 V power supply, ±0.3 V tolerance

• Input : LVTTL compatible, low input capacitance

•Output : LVTTL compatible, 3-state

•Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (SL version)

•Fast page mode with EDO, read modify write capability

•CAS before RAS refresh, hidden refresh, RAS-only refresh capability

•CAS before RAS self-refresh capability (SL version)

•Package options:

42-pin 400 mil plastic SOJ	(SOJ42-P-400-1.27)	(Product : MSM51V18165B/BSL-xxJS)
50/44-pin 400 mil plastic TSOP	(TSOPII50/44-P-400-0.80-K) (Product : MSM51V18165B/BSL-xxTS-K)
		xx indicates speed rank.

PRODUCT FAMILY

	Family	Access Time (Max.)				Cycle Time	Power Dissipation
						(Min.)
		tRAC	tAA	tCAC	tOEA		Operating (Max.)	Standby (Max.)
	MSM51V18165B/BSL-50	50 ns	25 ns	13 ns	13 ns	84 ns	684 mW	1.8 mW/
	MSM51V18165B/BSL-60	60 ns	30 ns	15 ns	15 ns	104 ns	576 mW
								0.72 mW (SL version)
	MSM51V18165B/BSL-70	70 ns	35 ns	20 ns	20 ns	124 ns	504 mW

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MSM51V18165B/BSL

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PIN CONFIGURATION (TOP VIEW)
VCC	1	42	VSS	VCC	1	50	VSS
DQ1	2	41	DQ16	DQ1	2	49	DQ16
DQ2	3	40	DQ15	DQ2	3	48	DQ15
DQ3	4	39	DQ14	DQ3	4	47	DQ14
DQ4	5	38	DQ13	DQ4	5	46	DQ13
VCC	6	37	VSS	VCC	6	45	VSS
DQ5	7	36	DQ12	DQ5	7	44	DQ12
DQ6	8	35	DQ11	DQ6	8	43	DQ11
DQ7	9	34	DQ10	DQ7	9	42	DQ10
DQ8 10		33	DQ9	DQ8 10		41	DQ9
NC 11		32	NC	NC 11		40	NC
NC 12		31	LCAS
WE 13		30	UCAS
RAS 14		29	OE
NC 15		28	A9	NC 15		36	NC
NC 16		27	A8	NC 16		35	LCAS
A0	17	26	A7	WE 17		34	UCAS
A1	18	25	A6	RAS 18		33	OE
A2	19	24	A5	NC 19		32	A9
A3	20	23	A4	NC 20		31	A8
VCC 21		22	VSS	A0	21	30	A7
	42-Pin Plastic SOJ			A1	22	29	A6
				A2	23	28	A5
				A3	24	27	A4
				VCC 25		26	VSS

50/44-Pin Plastic TSOP

(K Type)

Pin Name	Function
A0 - A9	Address Input
RAS	Row Address Strobe
LCAS	Lower Byte Column Address Strobe
UCAS	Upper Byte Column Address Strobe
DQ1 - DQ16	Data Input/Data Output
OE	Output Enable
WE	Write Enable
VCC	Power Supply (3.3 V)
VSS	Ground (0 V)
NC	No Connection

Note : The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin.

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BLOCK DIAGRAM

	Timing					WE	OE
RAS
	Generator
LCAS							I/O
							Controller			Output
UCAS									8		8
							I/O			Buffers
							Controller				DQ1 - DQ8
	10	Column				10	Column Decoders			Input
		Address							8		8
		Buffers								Buffers
		Internal				Sense Amplifiers 16		I/O	16
A0 - A9				Refresh				Selector
		Address
		Counter		Control Clock
									8	Input	8
		Row								Buffers
				Row
							Memory
	10	Address	10								DQ9 - DQ16
				Deco-	Word
		Buffers					Cells
				ders	Drivers					Output
									8		8
										Buffers

VCC

On Chip

VBB Generator

VSS

FUNCTION TABLE

			Input Pin			DQ Pin		Function Mode
	RAS	LCAS	UCAS	WE	OE	DQ1 - DQ8 DQ9 - DQ16
	H	*	*	*	*	High-Z	High-Z	Standby
	L	H	H	*	*	High-Z	High-Z	Refresh
	L	L	H	H	L	DOUT	High-Z	Lower Byte Read
	L	H	L	H	L	High-Z	DOUT	Upper Byte Read
	L	L	L	H	L	DOUT	DOUT	Word Read
	L	L	H	L	H	DIN	Don't Care	Lower Byte Write
	L	H	L	L	H	Don't Care	DIN	Upper Byte Write
	L	L	L	L	H	DIN	DIN	Word Write
	L	L	L	H	H	High-Z	High-Z	—

*: "H" or "L"

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