OKI MSM514222B-60RS, MSM514222B-30ZS, MSM514222B-40JS, MSM514222B-40RS, MSM514222B-40ZS Datasheet

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E2L0030-17-Y1

This version: Jan. 1998

¡SemiconductorSemiconductor MSM514222B

Previous version: Dec. 1996

MSM514222B

262,263-Word ´ 4-Bit Field Memory

DESCRIRTION

The OKI MSM514222B is a high performance 1-Mbit, 256K ´ 4-bit, Field Memory. It is designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and Multi-media systems. It is a FRAM for wide or low end use as general commodity TVs and VTRs, exclusively. The MSM514222B is not designed for the other use or high end use in medical systems, professional graphics systems which require long term picture, and data storage systems and others. The 1-Mbit capacity fits one field of a conventional NTSC TV screen and cascaded directly without any delay devices among the MSM514222B. (Cascading of MSM514222B provides larger storage depth or a longer delay).

Each of the 4-bit planes has separate serial write and read ports. These employ independent control clocks to support asynchronous read and write operations. Different clock rates are also supported that allow alternate data rates between write and read data streams.

The MSM514222B provides high speed FIFO, First-In First-Out, operation without external refreshing: it refreshes its DRAM storage cells automatically, so that it appears fully static to the users.

Moreover, fully static type memory cells and decoders for serial access enable refresh free serial access operation, so that the serial read and/or write control clock can be halted high or low for any duration as long as the power is on. Internal conflicts of memory access and refreshing operations are prevented by special arbitration logic.

The MSM514222B's function is simple, and similar to a digital delay device whose delay-bit- length is easily set by reset timing. The delay length, number of read delay clocks between write and read, is determined by externally controlled write and read reset timings.

Additional SRAM serial registers, or line buffers for the initial access of 256 ´ 4-bit enable high speed first-bit-access with no clock delay just after the write or read reset timings.

The MSM514222B is similar in operation and functionality to OKI 2-Mbit Field Memory MSM518222.

1/15

¡ Semiconductor

MSM514222B

FEATURES

Single power supply: 5 V ±10%

512 Rows ´ 512 Column ´ 4 bits

Fast FIFO (First-in First-out) operation

High speed asynchronous serial access

Read/Write cycle time

30 ns/40 ns/60 ns

Access time

25 ns/30 ns/50 ns

Functional compatibility with OKI MSM518222

Self refresh (No refresh control is required)

Package options:

16-pin 300 mil plastic DIP

(DIP16-P-300-2.54-W1)

(Product : MSM514222B-xxRS)

26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27)

(Product : MSM514222B-xxJS)

20-pin 400 mil plastic ZIP

(ZIP20-P-400-1.27)

(Product : MSM514222B-xxZS)

 

 

xx indicates speed rank.

PRODUCT FAMILY

Family

Access Time (Max.)

Cycle Time (Min.)

Package

 

 

 

 

MSM514222B-30RS

25 ns

30 ns

 

 

 

 

 

MSM514222B-40RS

30 ns

40 ns

300 mil 16-pin DIP

 

 

 

 

MSM514222B-60RS

50 ns

60 ns

 

 

 

 

 

MSM514222B-30JS

25 ns

30 ns

 

 

 

 

 

MSM514222B-40JS

30 ns

40 ns

300 mil 26/20-pin SOJ

 

 

 

 

MSM514222B-60JS

50 ns

60 ns

 

 

 

 

 

MSM514222B-30ZS

25 ns

30 ns

 

 

 

 

 

MSM514222B-40ZS

30 ns

40 ns

400 mil 20-pin ZIP

 

 

 

 

MSM514222B-60ZS

50 ns

60 ns

 

 

 

 

 

2/15

¡ Semiconductor

MSM514222B

PIN CONFIGURATION (TOP VIEW)

WE

 

 

 

16

VCC

1

 

 

RSTW

2

 

 

15

RE

SWCK

3

 

 

14

RSTR

DIN0

4

 

 

13

SRCK

DIN1

5

 

 

12

DOUT0

DIN2

6

 

 

11

DOUT1

DIN3

7

 

 

10

DOUT2

VSS

8

 

 

9

DOUT3

 

 

16-Pin Plastic DIP

 

WE

1

26

VCC

SRCK

1

RSTW

2

25

RE

RE

3

SWCK

3

24

RSTR

 

 

DIN0

4

23

SRCK

WE

5

NC

5

22

NC

SWCK

7

 

 

 

 

NC

9

18

NC

NC

9

 

 

DIN1 10

17

DOUT0

NC

11

DIN2 11

16

DOUT1

DIN1

13

DIN3 12

15

DOUT2

 

 

VSS 13

14

DOUT3

DIN3

15

 

 

 

 

DOUT3

17

26/20-Pin Plastic SOJ

DOUT1 19

2 RSTR

4 VCC

6 RSTW

8 DIN0

NO LEAD 12 NC

14 DIN2

16 VSS

18 DOUT2

20 DOUT0

20-Pin Plastic ZIP

Pin Name

Function

 

 

SWCK

Serial Write Clock

 

 

SRCK

Serial Read Clock

 

 

WE

Write Enable

 

 

RE

Read Enable

 

 

RSTW

Write Reset Clock

 

 

RSTR

Read Reset Clock

 

 

DIN0 - 3

Data Input

DOUT0 - 3

Data Output

VCC

Power Supply (5 V)

VSS

Ground (0 V)

NC

No Connection

 

 

3/15

OKI MSM514222B-60RS, MSM514222B-30ZS, MSM514222B-40JS, MSM514222B-40RS, MSM514222B-40ZS Datasheet

¡ Semiconductor

MSM514222B

BLOCK DIAGRAM

DOUT (´ 4)

RE

RSTR SRCK

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Data-Out

 

 

Serial

Read

Controller

 

 

 

Buffer (´ 4)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

512 Word Serial Read Register (´ 4)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Line Buffer

Read Line Buffer

 

 

 

 

 

 

Low-Half (´ 4)

High-Half (´ 4)

 

 

 

256 (´ 4)

256 (´ 4)

 

120 Word

 

 

 

 

 

Sub-Register (´ 4)

 

256K (´ 4)

 

 

 

 

X

Read/Write

 

 

Memory

 

 

Decoder

and Refresh

 

 

Array

 

Controller

120 Word

 

 

 

 

 

 

 

 

Sub-Register (´ 4)

 

 

 

 

 

 

 

256 (´ 4)

256 (´ 4)

Clock

 

Write Line Buffer

Write Line Buffer

Oscillator

 

 

 

Low-Half (´ 4)

High-Half (´ 4)

 

 

512 Word Serial Write Register (´ 4)

 

 

 

 

 

 

VBB

Data-In

 

 

 

 

Generator

Serial

Write

 

Controller

 

Buffer (´ 4)

 

 

DIN (´ 4)

WE

RSTW

SWCK

 

4/15

¡ Semiconductor

MSM514222B

OPERATION

Write Operation

The write operation is controlled by three clocks, SWCK, RSTW, and WE. Write operation is accomplished by cycling SWCK, and holding WE high after the write address pointer reset operation or RSTW.

Each write operation, which begins after RSTW, must contain at least 130 active write cycles, i.e. SWCK cycles while WE is high. To transfer the last data to the DRAM array, which at that time is stored in the serial data registers attached to the DRAM array, an RSTW operation is required after the last SWCK cycle.

Write Reset : RSTW

The first positive transition of SWCK after RSTW becomes high resets the write address counters to zero. RSTW setup and hold times are referenced to the rising edge of SWCK. Because the write reset function is solely controlled by the SWCK rising edge after the high level of RSTW, the states of WE are ignored in the write reset cycle.

Before RSTW may be brought high again for a further reset operation, it must be low for at least two SWCK cycles.

Data Inputs : DIN0 - 3

Write Clock : SWCK

The SWCK latches the input data on chip when WE is high, and also increments the internal write address pointer. Data-in setup time tDS, and hold time tDH are referenced to the rising edge of SWCK.

Write Enable : WE

WE is used for data write enable/disable control. WE high level enables the input, and WE low level disables the input and holds the internal write address pointer. There are no WE disable time (low) and WE enable time (high) restrictions, because the MSM514222B is in fully static operation as long as the power is on. Note that WE setup and hold times are referenced to the rising edge of SWCK.

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