OKI MSM514900CSL-80TS-K, MSM514900CSL-70TS-K, MSM514900CSL-60JS, MSM514900C-80JS, MSM514900C-70JS Datasheet

E2G0025-17-42

This version: Jan. 1998

Semiconductor MSM514900C/CSL

¡ Semiconductor

Previous version: May 1997

MSM514900C/CSL

524,288-Word ´ 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION

The MSM514900C/CSL is a 524,288-word ´ 9-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514900C/CSL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ single-layer metal CMOS process. The MSM514900C/CSL is available in a 28-pin plastic SOJ or 28pin plastic TSOP. The MSM514900CSL (the self-refresh version) is specially designed for lowerpower applications.

FEATURES

•524,288-word ´ 9-bit configuration

•Single 5 V power supply, ±10% tolerance

• Input	: TTL compatible, low input capacitance
• Output	: TTL compatible, 3-state
• Refresh	: 1024 cycles/16 ms, 1024 cycles/128 ms (SL version)

•Fast page mode, read modify write capability

•CAS before RAS refresh, hidden refresh, RAS-only refresh capability

•CAS before RAS self-refresh capability (SL version)

•Package options:

28-pin 400 mil plastic SOJ	(SOJ28-P-400-1.27)	(Product : MSM514900C/CSL-xxJS)
28-pin 400 mil plastic TSOP	(TSOPII28-P-400-1.27-K) (Product : MSM514900C/CSL-xxTS-K)
		xx indicates speed rank.

PRODUCT FAMILY

	Family	Access Time (Max.)				Cycle Time	Power Dissipation
		tRAC	tAA	tCAC	tOEA	(Min.)	Operating (Max.)	Standby (Max.)
	MSM514900C/CSL-60	60 ns	35 ns	20 ns	20 ns	110 ns	770 mW	5.5 mW/
	MSM514900C/CSL-70	70 ns	35 ns	20 ns	20 ns	130 ns	715 mW
								1.1 mW (SL version)
	MSM514900C/CSL-80	80 ns	40 ns	20 ns	20 ns	150 ns	660 mW

1/16

¡ Semiconductor MSM514900C/CSL

PIN CONFIGURATION (TOP VIEW)

VCC	1		28	VSS	VCC	1		28	VSS
					DQ1
DQ1	2		27	DQ9		2		27	DQ9
DQ2	3		26	DQ8	DQ2	3		26	DQ8
					DQ3				DQ7
DQ3	4		25	DQ7		4		25
DQ4				DQ6	DQ4				DQ6
	5		24			5		24
DQ5	6		23	CAS	DQ5				CAS
						6		23
WE				OE	WE				OE
	7		22			7		22
RAS				NC	RAS				NC
	8		21			8		21
A9R				A8	A9R				A8
	9		20			9		20
A0				A7	A0				A7
	10		19			10		19
					A1				A6
A1	11		18	A6		11		18
A2				A5	A2				A5
	12		17			12		17
A3				A4	A3				A4
	13		16			13		16
VCC	14		15	VSS	VCC	14		15	VSS
		28-Pin Plastic SOJ					28-Pin Plastic TSOP
							(K Type)

Pin Name	Function
A0 - A8, A9R	Address Input
RAS	Row Address Strobe
CAS	Column Address Strobe
DQ1 - DQ9	Data Input / Data Output
OE	Output Enable
WE	Write Enable
VCC	Power Supply (5 V)
VSS	Ground (0 V)
NC	No Connection

Note: The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin.

2/16

¡ Semiconductor

MSM514900C/CSL

BLOCK DIAGRAM

Timing

RAS Generator

	Timing
CAS	Generator

9

A0 - A8

9

A9R 1

VCC

VSS

Column					Write
		9	Column		Clock	WE
Address			Decoders		Generator		OE
Buffers
					9	Output	9
						Buffers
Internal	Refresh				I/O
			Sense
Address				9			9 DQ1 - DQ9
	Control Clock		Amplifiers		9
Counter					Selector	Input
					9		9
						Buffers
Row	Row
Address 10		Word	Memory
Buffers	De-
		Drivers	Cells
	coders

On Chip

VBB Generator

3/16

¡ Semiconductor MSM514900C/CSL

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Parameter	Symbol		Rating				Unit
Voltage on Any Pin Relative to VSS	VT		–1.0 to 7.0				V
Short Circuit Output Current	IOS		50				mA
Power Dissipation	PD*		1				W
Operating Temperature	Topr		0 to 70				°C
Storage Temperature	Tstg		–55 to 150				°C
	*: Ta = 25°C
Recommended Operating Conditions						(Ta = 0°C to 70°C)
Parameter	Symbol	Min.	Typ.		Max.		Unit
Power Supply Voltage	VCC	4.5	5.0		5.5		V
	VSS	0	0		0		V
Input High Voltage	VIH	2.4	—		6.5		V
Input Low Voltage	VIL	–1.0	—		0.8		V
Capacitance			(VCC = 5 V ±10%, Ta = 25°C, f = 1 MHz)
Parameter	Symbol	Typ.			Max.		Unit
Input Capacitance (A0 - A8, A9R)	CIN1	—			7		pF
Input Capacitance (RAS, CAS, WE, OE)	CIN2	—			7		pF
Output Capacitance (DQ1 - DQ9)	CI/O	—			8		pF

4/16

¡ Semiconductor								MSM514900C/CSL
DC Characteristics
							(VCC = 5 V ±10%, Ta = 0°C to 70°C)
				MSM514900		MSM514900		MSM514900
	Parameter	Symbol	Condition	C/CSL-60		C/CSL-70		C/CSL-80		Unit	Note
				Min.	Max.	Min.	Max.	Min.	Max.
	Output High Voltage	VOH	IOH = –5.0 mA	2.4	VCC	2.4	VCC	2.4	VCC	V
	Output Low Voltage	VOL	IOL = 4.2 mA	0	0.4	0	0.4	0	0.4	V
			0 V £ VI £ 6.5 V;
	Input Leakage Current	ILI	All other pins not	–10	10	–10	10	–10	10	mA
			under test = 0 V
	Output Leakage Current	ILO	DQ disable	–10	10	–10	10	–10	10	mA
			0 V £ VO £ 5.5 V
	Average Power		RAS, CAS cycling,
	Supply Current	ICC1		—	140	—	130	—	120	mA	1, 2
			tRC = Min.
	(Operating)
	Power Supply		RAS, CAS = VIH	—	2	—	2	—	2	mA	1
		ICC2	RAS, CAS	—	1	—	1	—	1
	Current (Standby)
			³ VCC –0.2 V	—	200	—	200	—	200	mA	1, 5
	Average Power		RAS cycling,
	Supply Current	ICC3	CAS = VIH,	—	140	—	130	—	120	mA	1, 2
	(RAS-only Refresh)		tRC = Min.
	Power Supply		RAS = VIH,
		ICC5	CAS = VIL,	—	5	—	5	—	5	mA	1
	Current (Standby)
			DQ = enable
	Average Power		RAS cycling,
	Supply Current	ICC6		—	140	—	130	—	120	mA	1, 2
			CAS before RAS
	(CAS before RAS Refresh)
	Average Power		RAS = VIL,
	Supply Current	ICC7	CAS cycling,	—	130	—	120	—	110	mA	1, 3
	(Fast Page Mode)		tPC = Min.
	Average Power		tRC = 125 ms,								1, 4,
	Supply Current	ICC10	CAS before RAS,	—	300	—	300	—	300	mA
											5
	(Battery Backup)		tRAS £ 1 ms
	Average Power
	Supply Current	ICCS	RAS £ 0.2 V,	—	300	—	300	—	300	mA	1, 5
	(CAS before RAS		CAS £ 0.2 V
	Self-Refresh)

Notes: 1. ICC Max. is specified as ICC for output open condition.

2.The address can be changed once or less while RAS = VIL.

3.The address can be changed once or less while CAS = VIH.

4.VCC – 0.2 V £ VIH £ 6.5 V, –1.0 V £ VIL £ 0.2 V.

5.SL version.

5/16