OKI MSM514260E-60JS, MSM514260E-60TS-K, MSM514260E-70JS, MSM514260E-70TS-K Datasheet

Semiconductor

This version:Aug.2000

MSM514260E

262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION

The MSM514260E is a 262,144-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514260E achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM514260E is available in a 40-pin plastic SOJ, 44/40-pin plastic TSOP.

FEATURES

∙262,144-word × 16-bit configuration

∙Single 5V power supply, ±10% tolerance

∙	Input	: TTL compatible, low input capacitance
∙	Output	: TTL compatible, 3-state
∙	Refresh	: 512 cycles/8 ms

∙Fast page mode, read modify write capability

∙CAS before RAS refresh, hidden refresh, RAS-only refresh capability

∙Package options:

40-pin 400mil plastic SOJ	(SOJ40-P-400-1.27)	(Product : MSM514260E-xxJS)
44/40-pin 400mil plastic TSOP	(TSOPII44/40-P-400-0.80-K) (Product : MSM514260E-xxTS-K)
		xx : indicates speed rank.

PRODUCT FAMILY

Family		Access Time (Max.)					Cycle Time	Power Dissipation
	tRAC		tAA	tCAC		tOEA	(Min.)	Operating (Max.)	Standby (Max.)
MSM514260E	60ns		30ns	15ns		15ns	110ns	633mW	5.5mW
	70ns		35ns	20ns		20ns	130ns	578mW

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MSM514260E

PIN CONFIGRATION (TOP VIEW)

		VCC			1		40		VSS				VCC	1		44		VSS
	DQ1				2		39		DQ16				DQ1	2		43		DQ16
	DQ2				3		38		DQ15				DQ2	3		42		DQ15
	DQ3				4		37		DQ14				DQ3	4		41		DQ14
	DQ4				5		36		DQ13				DQ4	5		40		DQ13
		VCC			6		35		VSS				VCC	6		39		VSS
	DQ5				7		34		DQ12				DQ5	7		38		DQ12
	DQ6				8		33		DQ11				DQ6	8		37		DQ11
	DQ7				9		32		DQ10				DQ7	9		36		DQ10
									DQ9
	DQ8				10		31						DQ8	10		35		DQ9
		NC			11		30		NC
		NC			12		29		LCAS				NC	13		32		NC
													NC					LCAS
		WE			13		28		UCAS					14		31
													WE				UCAS
	RAS				14		27		OE					15		30
		NC			15		26		A8				RAS	16		29		OE
		A0			16		25		A7				NC	17		28		A8
		A1			17		24		A6				A0	18		27		A7
		A2			18		23		A5				A1	19		26		A6
		A3			19		22		A4				A2	20		25		A5
		VCC			20		21		VSS				A3	21		24		A4
													VCC	22		23		VSS
					40-Pin Plastic SOJ								44/40-Pin Plastic TSOP
															(K Type)

Pin Name	Function
A0 − A8	Address Input
RAS	Row Address Strobe
LCAS	Lower Byte Column Address Strobe
UCAS	Upper Byte Column Address Strobe
DQ1 - DQ16	Data Input/Data Output
OE	Output Enable
WE	Write Enable
VCC	Power Supply (5V)
VSS	Ground (0V)
NC	No Connection

Note : The same power supply voltage must be provided to every VCC pin, and the same

GND voltage level must be provided to every VSS pin.

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MSM514260E

BLOCK DIAGRAM

WE

OE

RAS

Timing

Generator

I/O

LCAS

Controller

UCAS

Output

I/O

8

8

Buffers

Controller

DQ1 - DQ8

Column

9

Address

9

Column Decoders

8

Input

8

Buffers

Buffers

I/O

A0 - A8

Internal

Refresh

Sense Amplifiers

16

Selector

16

Address

Control Clock

Counter

8

Input

8

Buffers

9

Row

9

Row

Address

DQ9 - DQ16

Deco-

Word

Memory

Buffers

ders

Drivers

Cells

8

Output

8

Buffers

VCC

On Chip

VBB Generator

VSS

FUNCTION TABLE

		Input Pin				DQ Pin		Function Mode
RAS	LCAS	UCAS		WE	OE	DQ1-DQ8	DQ9-DQ16
H	*	*		*	*	High-Z	High-Z	Standby
L	H	H		*	*	High-Z	High-Z	Refresh
L	L	H		H	L	DOUT	High-Z	Lower Byte Read
L	H	L		H	L	High-Z	DOUT	Upper Byte Read
L	L	L		H	L	DOUT	DOUT	Word Read
L	L	H		L	H	DIN	Don’t Care	Lower Byte Write
L	H	L		L	H	Don’t Care	DIN	Upper Byte Write
L	L	L		L	H	DIN	DIN	Word Write
L	L	L		H	H	High-Z	High-Z	¾

* : “H” or “L”

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MSM514260E

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Parameter	Symbol	Rating	Unit
Voltage on Any Pin Relative to VSS	VIN, VOUT	-0.5 to VCC + 0.5	V
Voltage VCC supply Relative to VSS	VCC	-0.5 to 7.0	V
Short Circuit Output Current	IOS	50	mA
Power Dissipation	PD*	1	W
Operating Temperature	Topr	0 to 70	°C
Storage Temperature	Tstg	-55 to 150	°C

*: Ta = 25°C

Recommended Operating Conditions

(Ta = 0°C to 70°C)

	Parameter	Symbol	Min.	Typ.	Max.	Unit
	Power Supply Voltage	VCC	4.5	5.0	5.5	V
		VSS	0	0	0	V
	Input High Voltage	VIH	2.4	¾	VCC + 0.5*1	V
	Input Low Voltage	VIL	-0.5*2	¾	0.8	V

Notes: *1. The input voltage is VCC + 2.0V when the pulse width is less than 20ns (the pulse width is with respect to the point at which VCC is applied).

*2. The input voltage is VSS − 2.0V when the pulse width is less than 20ns (the pulse width respect to the point at which VSS is applied).

Capacitance

(VCC = 5V ± 10%, Ta = 25°C, f=1MHz)

	Parameter	Symbol	Typ.	Max.	Unit
	Input Capacitance (A0 – A8)	CIN1	¾	5	pF
	Input Capacitance	CIN2	¾	7	pF
	(RAS, LCAS, UCAS, WE, OE)
	Output Capacitance (DQ1 – DQ16)	CI/O	¾	7	pF

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MSM514260E

DC Characteristics

(VCC = 5V ± 10%, Ta = 0°C to 70°C)

				MSM514260		MSM514260
	Parameter	Symbol	Condition	E-60		E-70		Unit	Note
				Min.	Max	Min.	Max
	Output High Voltage	VOH	IOH = -5.0mA	2.4	VCC	2.4	VCC	V
	Output Low Voltage	VOL	IOL = 4.2mA	0	0.4	0	0.4	V
		ILI	0V £ VI £ 6.5V ;
	Input Leakage Current		All other pins not	-10	10	-10	10	mA
			under test = 0V
	Output Leakage Current	ILO	DQ disable	-10	10	-10	10	mA
			0V £ VO £ VCC
	Average Power Supply Current	ICC1	RAS, CAS cycling,	¾	115	¾	105	mA	1,2
	(Operating)		tRC = Min.
	Power Supply Current		RAS, CAS = VIH	¾	2	¾	2
		ICC2						mA	1
			RAS, CAS ³
	(Standby)			¾	1	¾	1
			VCC – 0.2V
	Average Power Supply Current		RAS cycling,
		ICC3	CAS = VIH,	¾	115	¾	105	mA	1,2
	(RAS-only Refresh)
			tRC = Min.
	Power Supply Current		RAS = VIH,
		ICC5	CAS = VIL,	¾	5	¾	5	mA	1
	(Standby)
			DQ = enable
	Average Power Supply Current	ICC6	RAS = cycling,	¾	115	¾	105	mA	1,2
	(CAS before RAS Refresh)		CAS before RAS
	Average Power Supply Current		RAS = VIL,
		ICC7	CAS cycling,	¾	115	¾	105	mA	1,3
	(Fast Page Mode)
			tPC = Min.

Notes: 1. ICC Max. is specified as ICC for output open condition.

2.The address can be changed once or less while RAS = VIL.

3.The address can be changed once or less while CAS = VIH.

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