MSM514265E70JS
Semiconductor
MSM514265E
262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSM514265E is a 262,144-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology.
The MSM514265E achieves high integration, high-speed operation, and low-power consumption because Oki
manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM514265E
is available in a 40-pin plastic SOJ or 44/40-pin plastic TSOP.
FEATURES
• 262,144-word × 16-bit configuration
• Single 5V power supply, ±10% tolerance
• Input : TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 512 cycles/8ms
• Fast page mode with EDO, read modify write capability
• CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• Package options:
40-pin 400mil plastic SOJ (SOJ40-P-400-1.27) (Product : MSM514265E-xxJS)
44/40-pin 400mil plastic TSOP (TSOPII44/40-P-400-0.80-K) (Product : MSM514265E-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.) Power Dissipation
Family
t
RAC
t
AA
t
CAC
t
OEA
Cycle Time
(Min.)
Operating (Max.) Standby (Max.)
60ns 30ns 15ns 15ns 104ns 633mW
MSM514265E
70ns 35ns 20ns 20ns 124ns 578mW
5.5mW
This version:Aug.2000
MSM514265E
PIN CONFIGRATION (TOP VIEW)
Pin Name Function
A0 − A8
Address Input
RAS
Row Address Strobe
LCAS
Lower Byte Column Address Strobe
UCAS
Upper Byte Column Address Strobe
DQ1–DQ16 Data Input/Data Output
OE
Output Enable
WE
Write Enable
V
CC
Power Supply (5V)
V
SS
Ground (0V)
NC No Connection
Note : The same power supply voltage must be provided to every VCC pin, and the same
GND voltage level must be provided to every VSS pin.
40-Pin Plastic SOJ
44/40-Pin Plastic TSOP
(K Type)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20 21
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
DQ1
DQ2
DQ3
DQ4
V
CC
V
CC
V
CC
V
SS
V
SS
V
SS
DQ16
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
A8
A7
A6
A0
A1
A2
A3
DQ5
DQ6
DQ7
DQ8
NC
NC
WE
RAS
NC
NC
A5
A4
LCAS
UCAS
OE
44
43
42
41
40
36
35
39
38
32
31
30
V
SS
V
SS
V
SS
DQ16
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
A8
A7
A6
A5
A4
LCAS
UCAS
OE29
28
27
26
NC
1
2
3
4
5
6
7
8
9
10
DQ1
DQ2
DQ3
DQ4
V
CC
V
CC
DQ5
DQ6
DQ7
DQ8
16
17
18
19
20
21
22 23
24
25
V
CC
A0
A1
A2
A3
NC
WE
RAS
NC
15
NC1413
37
MSM514265E
BLOCK DIAGRAM
FUNCTION TABLE
Input Pin DQ Pin
RAS LCAS UCAS WE OE
DQ1-DQ8 DQ9-DQ16
Function Mode
H * * * * High-Z High-Z Standby
L H H * * High-Z High-Z Refresh
L L H H L D
OUT
High-Z Lower Byte Read
L H L H L High-Z D
OUT
Upper Byte Read
L L L H L D
OUT
D
OUT
Word Read
L L H L H D
IN
Don’t Care Lower Byte Write
L H L L H Don’t Care D
IN
Upper Byte Write
L L L L H D
IN
D
IN
Word Write
L L L H H High-Z High-Z
* : “H” or “L”
A0〜A8
8888888168
16
999
9
Timing
Generator
Column
Address
Buffers
I/O
Controller
Internal
Address
Counter
Row
Address
Buffers
Refresh
Control Clock
I/O
Controller
Column Decoders
Sense Amplifiers
Memory
Cells
Word
Drivers
Row
Deco-
ders
I/O
Selector
Input
Buffers
Input
Buffers
Output
Buffers
Output
Buffers
DQ1〜DQ8
DQ9〜DQ16
OEWERAS
LCAS
UCAS
VCCV
SS
On Chip
VBB Generator
MSM514265E
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter Symbol Rating Unit
Voltage on Any Pin Relative to V
SS
VIN, V
OUT
−0.5 to VCC + 0.5
V
Voltage VCC supply Relative to V
SS
V
CC
−0.5 to 7.0
V
Short Circuit Output Current
I
OS
50 mA
Power Dissipation
P
D*
1 W
Operating Temperature
T
opr
0 to 70 °C
Storage Temperature
T
stg
−55 to 150
°C
*: Ta = 25°C
Recommended Operating Conditions
(Ta = 0°C to 70°C)
Parameter Symbol Min. Typ. Max. Unit
V
CC
4.5 5.0 5.5 V
Power Supply Voltage
V
SS
0 0 0 V
Input High Voltage
V
IH
2.4
V
CC
+ 0.5
*1
V
Input Low Voltage
V
IL
−0.5
*2
0.8 V
Notes: *1. The input voltage is VCC + 2.0V when the pulse width is less than 20ns (the pulse width is with
respect to the point at which VCC is applied).
*2. The input voltage is VSS − 2.0V when the pulse width is less than 20ns (the pulse width respect to
the point at which VSS is applied).
Capacitance
(VCC = 5V ± 10%, Ta = 25°C, f=1MHz)
Parameter Symbol Typ. Max. Unit
Input Capacitance (A0 – A8)
C
IN1
5 pF
Input Capacitance
(RAS, LCAS, UCAS, WE, OE)
C
IN2
7 pF
Output Capacitance (DQ1 - DQ16)
C
I/O
7 pF
MSM514265E
DC Characteristics
(VCC = 5V ± 10%, Ta = 0°C to 70°C)
MSM514265
E-60
MSM514265
E-70
Parameter
Symbol
Condition
Min. Max. Min. Max.
Unit Note
Output High Voltage
V
OH
IOH = −5.0mA
2.4
V
CC
2.4
V
CC
V
Output Low Voltage
V
OL
IOL = 4.2mA
0 0.4 0 0.4 V
Input Leakage Current
I
LI
0V ≤ VI ≤ 6.5V;
All other pins not
under test = 0V
− 10
10
− 10
10
µA
Output Leakage Current
I
LO
DQ disable
0V ≤ VO ≤ VCC
− 10
10
− 10
10
µA
Average Power Supply Current
(Operating)
I
CC1
RAS, CAS cycling,
tRC = Min.
115
105 mA 1,2
RAS, CAS = V
IH
2
2
Power Supply Current
(Standby)
I
CC2
RAS, CAS ≥
VCC − 0.2V
1
1
mA 1
Average Power Supply Current
(RAS-only Refresh)
I
CC3
RAS cycling,
CAS = VIH,
tRC = Min.
115
105 mA 1,2
Power Supply Current
(Standby)
I
CC5
RAS = VIH,
CAS = VIL,
DQ = enable
5
5 mA 1
Average Power Supply Current
(CAS before RAS Refresh)
I
CC6
RAS = cycling,
CAS before RAS
115
105 mA 1,2
Average Power Supply Current
(Fast Page Mode)
I
CC7
RAS = VIL,
CAS cycling,
t
HPC
= Min.
115
105 mA 1,3
Notes: 1. ICC Max. is specified as ICC for output open condition.
2. The address can be changed once or less while RAS = VIL.
3. The address can be changed once or less while CAS = VIH.
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