FEDD51V17405F-01
1Semiconductor
MSM51V17405F
This version: June. 2000 Previous version :
4,194,304-Word × 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
The MSM51V17405F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V17405F achieves high integration, high-speed operation, and lowpower consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM51V17405F is available in a 26/24-pin plastic SOJ or 26/24-pin plastic TSOP.
∙ 4,194,304-word × 4-bit configuration
∙ Single 3.3V power supply, ± 0.3V tolerance
∙ Input |
: LVTTL compatible, low input capacitance |
∙ Output |
: LVTTL compatible, 3-state |
∙Refresh : 2048 cycles/32ms
∙Fast page mode with EDO, read modify write capability
∙CAS before RAS refresh, hidden refresh, RAS-only refresh capability
∙Packages
26/24-pin 300mil plastic SOJ (SOJ26/24-P-300-1.27) (Product : MSM51V17405F-xxSJ) 26/24-pin 300mil plastic TSOP (TSOPII26/24-P-300-0.80-K) (Product : MSM51V17405F-xxTS-K)
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xx indicates speed rank. |
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PRODUCT FAMILY |
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Access Time (Max.) |
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Cycle Time |
Power Dissipation |
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Family |
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tRAC |
tAA |
tCAC |
tOEA |
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Operating |
Standby |
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(Max.) |
(Max.) |
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50ns |
25ns |
13ns |
13ns |
84ns |
360mW |
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MSM51V17405F |
60ns |
30ns |
15ns |
15ns |
104ns |
324mW |
1.8mW |
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70ns |
35ns |
20ns |
20ns |
124ns |
288mW |
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FEDD51V17405F-01
1Semiconductor |
MSM51V17405F |
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VCC |
1 |
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VSS |
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VCC |
1 |
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26 |
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VSS |
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26 |
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DQ1 2 |
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DQ4 |
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DQ1 2 |
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25 |
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DQ4 |
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25 |
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DQ2 3 |
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DQ3 |
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DQ2 3 |
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24 |
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DQ3 |
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24 |
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WE 4 |
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CAS |
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WE 4 |
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CAS |
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RAS 5 |
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OE |
RAS 5 |
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OE |
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NC 6 |
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A9 |
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NC 6 |
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21 |
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A9 |
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21 |
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A10 |
8 |
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A8 |
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A10 |
8 |
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A8 |
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19 |
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A0 |
9 |
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A7 |
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A0 |
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A7 |
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18 |
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A1 |
10 |
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A6 |
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A1 |
10 |
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A6 |
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17 |
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A2 |
11 |
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A5 |
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A2 |
11 |
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16 |
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A5 |
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16 |
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A3 |
12 |
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A4 |
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A3 |
12 |
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A4 |
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15 |
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VCC 13 |
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VSS |
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VCC 13 |
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14 |
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VSS |
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14 |
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26/24-Pin Plastic |
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26/24-Pin Plastic TSOP |
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SOJ |
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(K Type) |
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Pin Name |
Function |
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A0–A10 |
Address Input |
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RAS |
Row Address Strobe |
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CAS |
Column Address Strobe |
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DQ1–DQ4 |
Data Input/Data Output |
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OE |
Output Enable |
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WE |
Write Enable |
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VCC |
Power Supply (3.3V) |
VSS |
Ground (0V) |
NC |
No Connection |
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Note : The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin.
2/17
FEDD51V17405F-01
1Semiconductor |
MSM51V17405F |
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RAS |
Timing |
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Generator |
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Timing |
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CAS |
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Generator |
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Write |
WE |
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Column |
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Clock |
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OE |
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Generator |
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11 |
Address |
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11 |
Column Decoders |
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Buffers |
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4 |
Output |
4 |
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Buffers |
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Internal |
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Refresh |
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Sense Amplifiers |
4 |
I/O |
4 |
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4 |
DQ1 − |
DQ4 |
A0 − |
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Selector |
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A10 |
Address |
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Control Clock |
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Input |
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Counter |
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4 |
4 |
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Buffers |
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Row |
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Row |
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11 |
Address |
11 |
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Buffers |
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Deco- |
Word |
Memory |
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ders |
Drivers |
Cells |
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VCC
On Chip
VBB Generator
VSS
3/17
FEDD51V17405F-01
1Semiconductor |
MSM51V17405F |
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Parameter |
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Symbol |
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Value |
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Unit |
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Voltage VCC Supply relative to VSS |
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VT |
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–0.5 to 4.6 |
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V |
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Short Circuit Output Current |
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IOS |
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50 |
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mA |
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Power Dissipation |
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PD* |
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1 |
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W |
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Operating Temperature |
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Topr |
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0 to 70 |
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°C |
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Storage Temperature |
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Tstg |
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–55 to 150 |
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°C |
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*: Ta = 25° C |
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RECOMMENDED OPERATING CONDITIONS |
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(Ta = 0 to 70°C) |
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Parameter |
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Symbol |
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Min. |
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Typ. |
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Max. |
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Unit |
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Power Supply Voltage |
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VCC |
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3.0 |
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3.3 |
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3.6 |
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V |
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VSS |
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0 |
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0 |
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0 |
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V |
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Input High Voltage |
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VIH |
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2.0 |
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VCC + 0.3 |
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V |
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Input Low Voltage |
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VIL |
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− 0.3 |
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0.8 |
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V |
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Notes: *1. The input voltage is VCC + 1.0V when the pulse width is less than 20ns (the pulse width is with respect to the point at which VCC is applied).
*2. The input voltage is VSS − 1.0V when the pulse width is less than 20ns (the pulse width respect to the point at which VSS is applied).
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(Vcc = 3.3V ± |
0.3V, Ta = 25°C, f = 1 MHz) |
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Parameter |
Symbol |
Min. |
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Typ. |
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Min. |
Unit |
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Input Capacitance (A0 – A10) |
CIN1 |
— |
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— |
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5 |
pF |
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Input Capacitance |
CIN2 |
— |
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— |
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7 |
pF |
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(RAS, CAS, WE, OE) |
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Output Capacitance (DQ1 – DQ4) |
CI/O |
— |
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— |
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7 |
pF |
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4/17
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FEDD51V17405F-01 |
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1Semiconductor |
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MSM51V17405F |
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DC CHARACTERISTICS |
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(VCC = 3.3V ± |
0.3V, Ta = 0 to 70°C) |
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MSM51V17405 |
MSM51V17405 |
MSM51V17405 |
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Parameter |
Symbol |
Condition |
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F-50 |
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F-60 |
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F-70 |
Unit |
Note |
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Min. |
Max. |
Min. |
Max. |
Min. |
Max. |
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Output High Voltage |
VOH |
IOH = − 2.0mA |
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2.4 |
VCC |
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2.4 |
VCC |
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2.4 |
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VCC |
V |
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Output Low Voltage |
VOL |
IOL = 2.0mA |
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0 |
0.4 |
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0 |
0.4 |
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0 |
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0.4 |
V |
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Input Leakage |
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0V ≤ VI ≤ VCC+0.3V; |
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ILI |
All other pins not |
− |
10 |
10 |
− |
10 |
10 |
− |
10 |
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10 |
A |
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Current |
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under test = 0V |
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Output Leakage |
ILO |
DQ disable |
− |
10 |
10 |
− |
10 |
10 |
− |
10 |
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10 |
A |
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Current |
0V ≤ VO ≤ VCC |
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Average Power |
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RAS, CAS cycling, |
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Supply Current |
ICC1 |
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100 |
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90 |
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80 |
mA |
1,2 |
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tRC = Min. |
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(Operating) |
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Power Supply |
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RAS, CAS = VIH |
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2 |
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2 |
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2 |
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Current |
ICC2 |
RAS, CAS |
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0.5 |
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0.5 |
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0.5 |
mA |
1 |
(Standby) |
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≥ VCC − 0.2V |
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Average Power |
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RAS cycling, |
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Supply Current |
ICC3 |
CAS = VIH, |
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100 |
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90 |
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80 |
mA |
1,2 |
(RAS-only Refresh) |
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tRC = Min. |
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Power Supply |
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RAS = VIH, |
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Current |
ICC5 |
CAS = VIL, |
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5 |
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5 |
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5 |
mA |
1 |
(Standby) |
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DQ = enable |
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Average Power |
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Supply Current |
ICC6 |
RAS = cycling, |
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100 |
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90 |
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80 |
mA |
1,2 |
(CAS before RAS |
CAS before RAS |
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Refresh) |
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Average Power |
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RAS = VIL, |
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Supply Current |
ICC7 |
CAS cycling, |
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100 |
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90 |
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80 |
mA |
1,3 |
(Fast Page Mode) |
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tHPC = Min. |
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Notes: 1. ICC Max. is specified as ICC for output open condition.
2.The address can be changed once or less while RAS = VIL.
3.The address can be changed once or less while CAS = VIH.
5/17
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FEDD51V17405F-01 |
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1Semiconductor |
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MSM51V17405F |
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AC CHARACTERISTICS (1/3) |
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(VCC = 3.3V ± 0.3V, Ta = 0 to 70°C) Note1,2,3,12,13 |
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MSM51V17405 |
MSM51V17405 |
MSM51V17405 |
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Parameter |
Symbol |
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F-50 |
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F-60 |
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F-70 |
Unit |
Note |
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Min. |
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Max. |
Min. |
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Max. |
Min. |
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Max. |
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Random Read or Write Cycle Time |
tRC |
84 |
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104 |
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124 |
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ns |
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Read Modify Write Cycle Time |
tRWC |
110 |
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135 |
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160 |
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ns |
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Fast Page Mode Cycle Time |
tHPC |
20 |
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25 |
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30 |
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ns |
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Fast Page Mode Read Modify Write |
tHPRWC |
58 |
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68 |
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78 |
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ns |
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Cycle Time |
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Access Time from RAS |
tRAC |
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50 |
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60 |
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70 |
ns |
4, 5, 6 |
Access Time from CAS |
tCAC |
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13 |
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15 |
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20 |
ns |
4,5 |
Access Time from Column Address |
tAA |
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25 |
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30 |
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35 |
ns |
4,6 |
Access Time from CAS Precharge |
tCPA |
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30 |
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35 |
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40 |
ns |
4 |
Access Time from OE |
tOEA |
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13 |
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15 |
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20 |
ns |
4 |
Output Low Impedance Time from |
tCLZ |
0 |
|
|
0 |
|
|
0 |
|
|
ns |
4 |
CAS |
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Data Output Hold After CAS Low |
tDOH |
5 |
|
|
5 |
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|
5 |
|
|
ns |
|
CAS to Data Output Buffer Turn- |
tCEZ |
0 |
|
13 |
0 |
|
15 |
0 |
|
20 |
ns |
7,8 |
off Delay Time |
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RAS to Data Output Buffer Turn- |
tREZ |
0 |
|
13 |
0 |
|
15 |
0 |
|
20 |
ns |
7,8 |
off Delay Time |
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OE to Data Output Buffer Turn-off |
tOEZ |
0 |
|
13 |
0 |
|
15 |
0 |
|
20 |
ns |
7 |
Delay Time |
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WE to Data Output Buffer Turn- |
tWEZ |
0 |
|
13 |
0 |
|
15 |
0 |
|
20 |
ns |
7 |
off Delay Time |
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Transition Time |
tT |
1 |
|
50 |
1 |
|
50 |
1 |
|
50 |
ns |
3 |
Refresh Period |
tREF |
|
|
32 |
|
|
32 |
|
|
32 |
ms |
|
RAS Precharge Time |
tRP |
30 |
|
|
40 |
|
|
50 |
|
|
ns |
|
RAS Pulse Width |
tRAS |
50 |
|
10,000 |
60 |
|
10,000 |
70 |
|
10,000 |
ns |
|
RAS Pulse Width |
tRASP |
50 |
|
100,000 |
60 |
|
100,000 |
70 |
|
100,000 |
ns |
|
(Fast Page Mode with EDO) |
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RAS Hold Time |
tRSH |
7 |
|
|
10 |
|
|
13 |
|
|
ns |
|
RAS Hold Time referenced to OE |
tROH |
7 |
|
|
10 |
|
|
13 |
|
|
ns |
|
CAS Precharge Time |
tCP |
7 |
|
|
10 |
|
|
10 |
|
|
ns |
|
(Fast Page Mode with EDO) |
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CAS Pulse Width |
tCAS |
7 |
|
10,000 |
10 |
|
10,000 |
13 |
|
10,000 |
ns |
|
CAS Hold Time |
tCSH |
35 |
|
|
40 |
|
|
45 |
|
|
ns |
|
6/17