OKI MSM51V18160DSL-60TS-K, MSM51V18160DSL-50TS-K, MSM51V18160D-70JS, MSM51V18160D-60JS, MSM51V18160DSL-70JS Datasheet

	E2G0131-17-61	Preliminary
	¡ Semiconductor
		This version: Mar. 1998
		MSM51V18160D/DSL
	Semiconductor

MSM51V18160D/DSL

1,048,576-Word ´ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION

The MSM51V18160D/DSL is a 1,048,576-word ´ 16-bit dynamic RAM fabricated in Oki's silicon- gateCMOStechnology.TheMSM51V18160D/DSLachieveshighintegration,high-speedoperation, andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/ double-layer metal CMOS process. The MSM51V18160D/DSL is available in a 42-pin plastic SOJ or 50/44-pin plastic TSOP. The MSM51V18160DSL (the self-refresh version) is specially designed for lower-power applications.

FEATURES

•1,048,576-word ´ 16-bit configuration

•Single 3.3 V power supply, ±0.3 V tolerance

• Input : LVTTL compatible, low input capacitance

•Output : LVTTL compatible, 3-state

•Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (SL version)

•Fast page mode, read modify write capability

•CAS before RAS refresh, hidden refresh, RAS-only refresh capability

•CAS before RAS self-refresh capability (SL version)

•Package options:

42-pin 400 mil plastic SOJ	(SOJ42-P-400-1.27)	(Product : MSM51V18160D/DSL-xxJS)
50/44-pin 400 mil plastic TSOP	(TSOPII50/44-P-400-0.80-K) (Product : MSM51V18160D/DSL-xxTS-K)
		xx indicates speed rank.

PRODUCT FAMILY

	Family	Access Time (Max.)				Cycle Time	Power Dissipation
						(Min.)
		tRAC	tAA	tCAC	tOEA		Operating (Max.)	Standby (Max.)
	MSM51V18160D/DSL-50	50 ns	25 ns	13 ns	13 ns	90 ns	450 mW	1.8 mW/
	MSM51V18160D/DSL-60	60 ns	30 ns	15 ns	15 ns	110 ns	414 mW
								0.72 mW (SL version)
	MSM51V18160D/DSL-70	70 ns	35 ns	20 ns	20 ns	130 ns	378 mW

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MSM51V18160D/DSL

PIN CONFIGURATION (TOP VIEW)
VCC	1	42	VSS	VCC	1	50	VSS
DQ1	2	41	DQ16	DQ1	2	49	DQ16
DQ2	3	40	DQ15	DQ2	3	48	DQ15
DQ3	4	39	DQ14	DQ3	4	47	DQ14
DQ4	5	38	DQ13	DQ4	5	46	DQ13
VCC	6	37	VSS	VCC	6	45	VSS
DQ5	7	36	DQ12	DQ5	7	44	DQ12
DQ6	8	35	DQ11	DQ6	8	43	DQ11
DQ7	9	34	DQ10	DQ7	9	42	DQ10
DQ8 10		33	DQ9	DQ8 10		41	DQ9
NC 11		32	NC	NC 11		40	NC
NC 12		31	LCAS
WE 13		30	UCAS
RAS 14		29	OE
NC 15		28	A9	NC 15		36	NC
NC 16		27	A8	NC 16		35	LCAS
A0	17	26	A7	WE 17		34	UCAS
A1	18	25	A6	RAS 18		33	OE
A2	19	24	A5	NC 19		32	A9
A3	20	23	A4	NC 20		31	A8
VCC 21		22	VSS	A0	21	30	A7
	42-Pin Plastic SOJ			A1	22	29	A6
				A2	23	28	A5

A3	24		27	A4
				VSS
VCC	25		26

50/44-Pin Plastic TSOP

(K Type)

Pin Name	Function
A0 - A9	Address Input
RAS	Row Address Strobe
LCAS	Lower Byte Column Address Strobe
UCAS	Upper Byte Column Address Strobe
DQ1 - DQ16	Data Input/Data Output
OE	Output Enable
WE	Write Enable
VCC	Power Supply (3.3 V)
VSS	Ground (0 V)
NC	No Connection

Note : The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin.

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¡ Semiconductor MSM51V18160D/DSL

BLOCK DIAGRAM

	Timing				WE	OE
RAS
	Generator
LCAS						I/O
						Controller			Output
UCAS								8		8
						I/O			Buffers
						Controller				DQ1 - DQ8
	10	Column			10	Column Decoders			Input
		Address						8		8
		Buffers							Buffers
		Internal			Sense Amplifiers 16		I/O	16
A0 - A9			Refresh				Selector
		Address
		Counter	Control Clock
								8	Input	8
		Row							Buffers
			Row
						Memory
	10	Address 10								DQ9 - DQ16
			Deco-	Word
		Buffers	ders	Drivers		Cells			Output
								8		8
									Buffers

VCC

On Chip

VBB Generator

VSS

FUNCTION TABLE

			Input Pin			DQ Pin		Function Mode
	RAS	LCAS	UCAS	WE	OE	DQ1 - DQ8 DQ9 - DQ16
	H	*	*	*	*	High-Z	High-Z	Standby
	L	H	H	*	*	High-Z	High-Z	Refresh
	L	L	H	H	L	DOUT	High-Z	Lower Byte Read
	L	H	L	H	L	High-Z	DOUT	Upper Byte Read
	L	L	L	H	L	DOUT	DOUT	Word Read
	L	L	H	L	H	DIN	Don't Care	Lower Byte Write
	L	H	L	L	H	Don't Care	DIN	Upper Byte Write
	L	L	L	L	H	DIN	DIN	Word Write
	L	L	L	H	H	High-Z	High-Z	—

*: "H" or "L"

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¡ Semiconductor MSM51V18160D/DSL

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

	Parameter	Symbol		Rating			Unit
	Voltage on Any Pin Relative to VSS	VT		–0.5 to 4.6			V
	Short Circuit Output Current	IOS		50			mA
	Power Dissipation	PD*		1			W
	Operating Temperature	Topr		0 to 70			°C
	Storage Temperature	Tstg		–55 to 150			°C
		*: Ta = 25°C
Recommended Operating Conditions						(Ta = 0°C to 70°C)
	Parameter	Symbol	Min.	Typ.		Max.	Unit
	Power Supply Voltage	VCC	3.0	3.3		3.6	V
		VSS	0	0		0	V
	Input High Voltage	VIH	2.0	—		VCC + 0.3	V
	Input Low Voltage	VIL	–0.3	—		0.8	V
Capacitance				(VCC = 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)
	Parameter	Symbol	Typ.			Max.	Unit
	Input Capacitance (A0 - A9)	CIN1	—			5	pF
	Input Capacitance	CIN2	—			7	pF
	(RAS, LCAS, UCAS, WE, OE)
	Output Capacitance (DQ1 - DQ16)	CI/O	—			7	pF

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¡ Semiconductor									MSM51V18160D/DSL
DC Characteristics							(VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C)
				MSM51V18160MSM51V18160MSM51V18160
	Parameter	Symbol	Condition	D/DSL-50		D/DSL-60			D/DSL-70		Unit	Note
				Min.	Max. Min.			Max. Min.		Max.
	Output High Voltage	VOH	IOH = –2.0 mA	2.4	VCC	2.4		VCC	2.4	VCC	V
	Output Low Voltage	VOL	IOL = 2.0 mA	0	0.4	0		0.4	0	0.4	V
			0 V £ VI £ VCC + 0.3 V;
	Input Leakage Current	ILI	All other pins not	–10	10	–10		10	–10	10	mA
			under test = 0 V
	Output Leakage Current	ILO	DQ disable	–10	10	–10		10	–10	10	mA
			0 V £ VO £ VCC
	Average Power		RAS, CAS cycling,
	Supply Current	ICC1		—	125	—		115	—	105	mA	1, 2
			tRC = Min.
	(Operating)
	Power Supply		RAS, CAS = VIH	—	2	—		2	—	2	mA	1
		ICC2	RAS, CAS	—	0.5	—		0.5	—	0.5
	Current (Standby)
			³ VCC –0.2 V	—	200	—		200	—	200	mA	1, 5
	Average Power		RAS cycling,
	Supply Current	ICC3	CAS = VIH,	—	125	—		115	—	105	mA	1, 2
	(RAS-only Refresh)		tRC = Min.
	Power Supply		RAS = VIH,
		ICC5	CAS = VIL,	—	5	—		5	—	5	mA	1
	Current (Standby)
			DQ = enable
	Average Power		RAS cycling,
	Supply Current	ICC6		—	125	—		115	—	105	mA	1, 2
			CAS before RAS
	(CAS before RAS Refresh)
	Average Power		RAS = VIL,
	Supply Current	ICC7	CAS cycling,	—	85	—		80	—	75	mA	1, 3
	(Fast Page Mode)		tPC = Min.
	Average Power		tRC = 125 ms,									1, 4,
	Supply Current	ICC10	CAS before RAS,	—	300	—		300	—	300	mA
												5
	(Battery Backup)		tRAS £ 1 ms
	Average Power
	Supply Current	ICCS	RAS £ 0.2 V,	—	300	—		300	—	300	mA	1, 5
	(CAS before RAS		CAS £ 0.2 V
	Self-Refresh)

Notes : 1. ICC Max. is specified as ICC for output open condition.

2.The address can be changed once or less while RAS = VIL.

3.The address can be changed once or less while CAS = VIH.

4.VCC – 0.2 V £ VIH £ VCC + 0.3 V, –0.3 V £ VIL £ 0.2 V.

5.SL version.

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