OKI MSM5118165F-70JS, MSM5118165F-50JS, MSM5118165F-50TS-K, MSM5118165F-60JS, MSM5118165F-60TS-K Datasheet

FEDD5118165F-01

1Semiconductor

MSM5118165F

This version: June. 2000 Previous version :

1,048,576-Word × 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION

The MSM5118165F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V18165F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM5118165F is available in a 42-pin plastic SOJ or 50/44-pin plastic TSOP.

FEATURES

· 1,048,576-word × 16-bit configuration

· Single 5V power supply, ± 10% tolerance

· Input	: TTL compatible, low input capacitance
· Output	: TTL compatible, 3-state

·Refresh : 1024 cycles/16ms

·Fast page mode with EDO, read modify write capability

·CAS before RAS refresh, hidden refresh, RAS-only refresh capability

·Packages

	42-pin 400mil plastic SOJ		(SOJ42-P-400-1.27)				(Product : MSM5118165F-xxJS)
	50/44-pin 400mil plastic TSOP (TSOPII50/44-P-400-0.80-K)						(Product : MSM5118165F-xxTS-K)
							xx indicates speed rank.
PRODUCT FAMILY
			Access Time (Max.)			Cycle Time		Power Dissipation
	Family
								Operating	Standby
		tRAC	tAA	tCAC	tOEA		(Min.)
								(Max.)	(Max.)
		50ns	25ns	13ns	13ns		84ns	743mW
	MSM5118165F	60ns	30ns	15ns	15ns		104ns	688mW	5.5mW
		70ns	35ns	20ns	20ns		124ns	633mW

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FEDD5118165F-01

1Semiconductor

MSM5118165F

PIN CONFIGURATION (TOP VIEW)

VCC 1	42	VSS
DQ1 2	41	DQ16
DQ2 3	40	DQ15
DQ3 4	39	DQ14
DQ4 5	38	DQ13
VCC 6	37	VSS
DQ5 7	36	DQ12
DQ6 8	35	DQ11
DQ7 9	34	DQ10
DQ8 10	33	DQ9
NC 11	32	NC
NC 12	31	LCAS
WE 13	30	UCAS
RAS 14	29	OE
NC 15	28	A9
NC 16	27	A8
A0 17	26	A7
A1 18	25	A6
A2 19	24	A5
A3 20	23	A4
VCC 21	22	VSS

42-Pin Plastic

SOJ

VCC				VSS
	1		50
DQ1	2		49	DQ16
DQ2	3		48	DQ15
DQ3	4		47	DQ14
DQ4	5		46	DQ13
VCC	6		45	VSS
DQ5				DQ12
	7		44
DQ6	8		43	DQ11
DQ7	9		42	DQ10
DQ8	10		41	DQ9
NC	11		40	NC
NC	15		36	NC
NC	16		35	LCAS
WE	17		34	UCAS
RAS	18		33	OE
NC	19		32	A9
NC	20		31	A8
A0	21		30	A7
A1 22				A6
			29
A2 23			28	A5
A3 24			27	A4
VCC 25				VSS
			26

50/44-Pin Plastic TSOP

(K Type)

Pin Name	Function
A0–A9	Address Input
RAS	Row Address Strobe
LCAS	Lower Byte Column Address Strobe
UCAS	Upper Byte Column Address Strobe
DQ1–DQ16	Data Input/Data Output
OE	Output Enable
WE	Write Enable
VCC	Power Supply (5V)
VSS	Ground (0V)
NC	No Connection

Note : The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin.

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	FEDD5118165F-01
1Semiconductor	MSM5118165F

BLOCK DIAGRAM

WE

OE

RAS

Timing

Generator

I/O

LCAS

Controller

UCAS

I/O

8

Output

8

Buffers

Controller

DQ1-DQ8

Column

10

Address

10

Column Decoders

8

Input

8

Buffers

Buffers

Internal

Refresh

Sense Amplifiers

16

I/O

16

A0-A9

Address

Selector

Control Clock

Counter

8

Input

8

Buffers

10

Row

10

Row

Address

Word

Memory

DQ9-DQ16

Buffers

Deco-

ders

Drivers

Cells

8

Output

8

Buffers

VCC

On Chip

VBB Generator

On Chip

VSS

IVCC Generator

FUNCTION TABLE

			Input Pin			DQ Pin		Function Mode
	RAS	LCAS	UCAS	WE	OE	DQ1-DQ8	DQ9-DQ16
	H	*	*	*	*	High-Z	High-Z	Standby
	L	H	H	*	*	High-Z	High-Z	Refresh
	L	L	H	H	L	DOUT	High-Z	Lower Byte Read
	L	H	L	H	L	High-Z	DOUT	Upper Byte Read
	L	L	L	H	L	DOUT	DOUT	Word Read
	L	L	H	L	H	DIN	Don’t Care	Lower Byte Write
	L	H	L	L	H	Don’t Care	DIN	Upper Byte Write
	L	L	L	L	H	DIN	DIN	Word Write
	L	L	L	H	H	High-Z	High-Z

* : “H” or “L”

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FEDD5118165F-01

1Semiconductor

MSM5118165F

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Voltage on Any Pin Relative to VSS

VIN, VOUT

–0.5 to VCC+ 0.5

V

Voltage VCC Supply relative to VSS

VCC

–0.5 to 7

V

Short Circuit Output Current

IOS

50

mA

Power Dissipation

PD*

1

W

Operating Temperature

Topr

0 to 70

°C

Storage Temperature

Tstg

–55 to 150

°C

*: Ta = 25° C

RECOMMENDED OPERATING CONDITIONS

(Ta = 0 to 70°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Power Supply Voltage

VCC

4.5

5.0

5.5

V

VSS

0

0

0

V

Input High Voltage

VIH

2.4

VCC + 0.5*1

V

Input Low Voltage

VIL

− 0.5*2

0.8

V

Notes: *1. The input voltage is VCC + 2.0V when the pulse width is less than 20ns (the pulse width is with respect to the point at which VCC is applied).

*2. The input voltage is VSS − 2.0V when the pulse width is less than 20ns (the pulse width respect to the point at which VSS is applied).

PIN CAPACITANCE

			(Vcc = 5V ±	10%, Ta = 25°C, f = 1 MHz)
Parameter	Symbol	Min.	Typ.		Min.	Unit
Input Capacitance (A0 - A9)	CIN1	—	—		5	pF
Input Capacitance	CIN2	—	—		7	pF
(RAS, LCAS, UCAS, WE, OE)
Output Capacitance (DQ1 - DQ16)	CI/O	—	—		7	pF

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FEDD5118165F-01

1Semiconductor

MSM5118165F

DC CHARACTERISTICS

(VCC = 5V ±

10%, Ta = 0 to 70°C)

MSM5118165

MSM5118165

MSM5118165

Parameter

Symbol

Condition

F-50

F-60

F-70

Unit

Note

Min.

Max.

Min.

Max.

Min.

Max.

Output High Voltage

VOH

IOH = − 5.0mA

2.4

VCC

2.4

VCC

2.4

VCC

V

Output Low Voltage

VOL

IOL = 4.2mA

0

0.4

0

0.4

0

0.4

V

Input Leakage

ILI

0V ≤ VI ≤ 6.5V;

−

10

10

−

10

10

−

10

10

A

All other pins not

Current

under test = 0V

Output Leakage

ILO

DQ disable

−

10

10

−

10

10

−

10

10

A

Current

0V ≤ VO ≤ VCC

Average Power

RAS, CAS cycling,

Supply Current

ICC1

135

125

115

mA

1,2

tRC = Min.

(Operating)

Power Supply

RAS, CAS = VIH

2

2

2

Current

ICC2

RAS, CAS

1

1

1

mA

1

(Standby)

≥ VCC − 0.2V

Average Power

RAS cycling,

Supply Current

ICC3

CAS = VIH,

135

125

115

mA

1,2

(RAS-only Refresh)

tRC = Min.

Power Supply

RAS = VIH,

Current

ICC5

CAS = VIL,

5

5

5

mA

1

(Standby)

DQ = enable

Average Power

RAS = cycling,

Supply Current

ICC6

135

125

115

mA

1,2

(CAS before RAS

CAS before RAS

Refresh)

Average Power

RAS = VIL,

Supply Current

ICC7

CAS cycling,

120

110

100

mA

1,3

(Fast Page Mode)

tHPC = Min.

Notes: 1. ICC Max. is specified as ICC for output open condition.

2.The address can be changed once or less while RAS = VIL.

3.The address can be changed once or less while CAS = VIH.

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