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MSM51V18160F-70TS-K
Datasheet
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OKI MSM51V18160F-70TS-K, MSM51V18160F-70TS-L, MSM51V18160F-70JS, MSM51V18160F-50TS-L, MSM51V18160F-50JS Datasheet

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1/14
Semiconductor
M SM51V18160F
1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM51V18160F is a 1,048,576-word ´ 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The
MSM51V18160F is available in a 42-pin plastic SOJ or 50/44-pin plastic TSOP.
FEATURES
· 1,048,576-word ´ 16-bit configuration
· Single 3.3V power supply, ±0.3V tolerance
· Input : LVTTL compatible, low input capacitance
· Output : LVTTL compatible, 3-state
· Refresh : 1024 cycles/16ms
· Fast page mode, read modify write capability
· CAS before RAS refresh, hidden refresh, RAS-only refresh capability
· CAS before RAS self-refresh capability
· Package options:
42-pin 400mil plastic SOJ (SOJ42-P-400-1.27) (Product : MSM51V18160F-xxJS)
50/44-pin 400mil plastic TSOP (TSOPII50/44-P-400-0.80-K) (Product : MSM51V18160F-xxTS-K)
(TSOPII50/44-P-400-0.80-L) (Product : MSM51V18160F-xxTS-L)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.) Power Dissipation
Family
t
RAC
t
AA
t
CAC
t
OEA
Cycle Time
(Min.)
Operating (Max.) Standby (Max.)
50ns 25ns 13ns 13ns 90ns 450mW
60ns 30ns 15ns 15ns 110ns 414mWMSM51V18165F
70ns 35ns 20ns 20ns 130ns 378mW
1.8mW
This version:Oct.1999
No.
2/14
PIN CONFIGRATION (TOP VIEW)
Pin Name Function
A0–A9 Address Input
RAS Row Address Strobe
LCAS Lower Byte Column Address Strobe
UCAS Upper Byte Column Address Strobe
DQ1–DQ16 Data Input/Data Output
OE Output Enable
WE Write Enable
V
CC
Power Supply (3.3V)
V
SS
Ground (0V)
NC No Connection
Note : The same power supply voltag e m ust be prov ided to ev ery V
CC
pin, and the same
GND voltage level must be provided to every V
SS
pin.
42-Pin Plastic SOJ
55/44-Pin Plastic TSOP
(K Type)
1
2
3
4
5
6
7
8
9
10
11
15
16
17
18
19
20
21
50
49
48
47
46
45
44
43
42
41
40
36
35
34
33
32
31
30
DQ1
DQ2
DQ3
DQ4
V
CC
V
CC
A3
V
SS
V
SS
V
SS
DQ16
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
A9
A8
A7
A6
NC
A0
A1
A2
DQ5
DQ6
DQ7
DQ8
NC
NC
NC
WE
RAS
NC
NC
A5
A4
LCAS
UCAS
OE
22
23
24
25
29
28
27
26V
CC
NC
55/44-Pin Plastic TSOP
(L Type)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
DQ1
DQ2
DQ3
DQ4
V
CC
V
CC
V
CC
V
SS
V
SS
V
SS
DQ16
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
A9
A8
A7
A6
A0
A1
A2
A3
DQ5
DQ6
DQ7
DQ8
NC
NC
WE
RAS
NC
NC
NC
A5
A4
LCAS
UCAS
OE
1
2
3
4
5
6
7
8
9
10
11
15
16
17
18
19
20
21
50
49
48
47
46
45
44
43
42
41
40
36
35
34
33
32
31
30
DQ1
DQ2
DQ3
DQ4
V
CC
V
CC
A4
V
SS
V
SS
V
CC
DQ16
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
A9
A8
A0
A1
NC
A7
A6
A5
DQ5
DQ6
DQ7
DQ8
NC
NC
NC
WE
RAS
NC
NC
A2
A3
LCAS
UCAS
OE
22
23
24
25
29
28
27
26V
SS
NC
No.
3/14
BLOCK DIAGRAM
FUNCTION TABLE
Input Pin DQ Pin
RAS LCAS UCAS WE OE DQ1-DQ8 DQ9-DQ16
Function Mode
H * * * * High-Z High-Z Standby
L H H * * High-Z High-Z Refresh
LLHHL D
OUT
High-Z Lower Byte Read
LHLHLHigh-Z D
OUT
Upper Byte Read
LLLHL D
OUT
D
OUT
Word Read
LLHLH D
IN
Don’t Care Lower Byte Write
L H L L H Don’t Care D
IN
Upper Byte Write
LLLLH D
IN
D
IN
Word Write
L L L H H High-Z High-Z
¾
* : “H” or “L”
A
0-
A
9
8
8
8
8
8
8
8
16
8
16
10
1010
10
Timing
Generator
Column
Address
Buffers
I/O
Controller
Internal
Address
Counter
Row
Address
Buffers
Refresh
Control Clock
I/O
Controller
Column Decoders
Sense Amplifiers
Memory
Cells
Word
Drivers
Row
Deco-
ders
I/O
Selector
Input
Buffers
Input
Buffers
Output
Buffers
Output
Buffers
DQ
1-
DQ
8
DQ
9-
DQ
16
OE
WE
RAS
LCAS
UCAS
V
CC
V
SS
On Chip
V
BB
Generator
On Chip
IV
CC
Generator
No.
4/14
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter Symbol Rating Unit
Voltage on Any Pin Relative to V
SS
V
IN
, V
OUT
- 0.5 to V
CC
+ 0.5
V
Voltage V
CC
Supply relative to V
SS
V
CC
- 0.5 to 4.6
V
Short Circuit Output Current
I
OS
50 mA
Power Dissipation
P
D*
1W
Operating Temperature
T
opr
0 to 70 °C
Storage Temperature
T
stg
- 55 to 150
°C
*: Ta = 25
°
C
Recommended Operating Conditions
(Ta = 0 °C to 70 °C)
Parameter Symbol Min. Typ. Max. Unit
V
CC
3.0 3.3 3.6 V
Power Supply Voltage
V
SS
000V
Input High Voltage
V
IH
2.0
¾
V
CC
+ 0.3
*1
V
Input Low Voltage
V
IL
- 0.3
*2
¾
0.8 V
Notes: *1. The input voltage is V
CC
+ 1.0V when the pulse width is less than 20ns (the pulse width is with
respect to the point at which V
CC
is applied).
*2. The input voltage is V
SS
- 1.0V when the pulse width is less than 20ns (the pulse width respect to
the point at which V
SS
is applied).
Capacitance
(V
CC
= 3.3V
±
0.3V, Ta = 25°C, f=1MHz)
Parameter Symbol Typ. Max. Unit
Input Capacitance (A0 - A9)
C
IN1
¾
5pF
Input Capacitance
(RAS, LCAS, UCAS, WE, OE)
C
IN2
¾
7pF
Output Capacitance (DQ1 - DQ16)
C
I/O
¾
7pF
No.
5/14
DC Characteristics
(V
CC
= 3.3V
±
0.3V, Ta = 0°C to 70°C)
MSM51V18160
F-50
MSM51V18160
F-60
MSM51V18160
F-70
Parameter
Symbol
Condition
Min. Max. Min. Max. Min. Max.
Unit Note
Output High Voltage
V
OH
I
OH
= -2.0mA
2.4
V
CC
2.4
V
CC
2.4
V
CC
V
Output Low Voltage
V
OL
I
OL
= 2.0mA
00.400.400.4V
Input Leakage
Current
I
LI
0V £ V
I
£ V
CC
+0.3V;
All other pins not
under test = 0V
- 10
10
- 10
10
- 10
10
mA
Output Leakage
Current
I
LO
DQ disable
0V £ V
O
£ V
CC
- 10
10
- 10
10
- 10
10
mA
Average Power
Supply Current
(Operating)
I
CC1
RAS, CAS cycling,
t
RC
= Min.
¾
80
¾
70
¾
60 mA 1,2
RAS, CAS = V
IH
¾
2
¾
2
¾
2
Power Supply
Current
(Standby)
I
CC2
RAS, CAS
³ V
CC
- 0.2V
¾
0.5
¾
0.5
¾
0.5
mA 1
Average Power
Supply Current
(RAS-only Refresh)
I
CC3
RAS cycling,
CAS = V
IH
,
t
RC
= Min.
¾
80
¾
70
¾
60 mA 1,2
Power Supply
Current
(Standby)
I
CC5
RAS = V
IH
,
CAS = V
IL
,
DQ = enable
¾
5
¾
5
¾
5mA1
Average Power
Supply Current
(CAS before RAS
Refresh)
I
CC6
RAS = cycling,
CAS before RAS
¾
80
¾
70
¾
60 mA 1,2
Average Power
Supply Current
(Fast Page Mode)
I
CC7
RAS = V
IL
,
CAS cycling,
t
PC
= Min.
¾
80
¾
70
¾
60 mA 1,3
Notes: 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while RAS = V
IL
.
3. The address can be changed once or less while CAS = V
IH
.
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