OKI MSM51V17805BSL-60JS, MSM51V17805B-70JS, MSM51V17805B-60JS, MSM51V17805BSL-70TS-K, MSM51V17805BSL-60TS-K Datasheet
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¡SemiconductorSemiconductor MSM51V17805B/BSL
E2G0079-17-41
MSM51V17805B/BSL
2,097,152-Word ´ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSM51V17805B/BSL is a 2,097,152-word ´ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOStechnology.TheMSM51V17805B/BSLachieveshighintegration,high-speedoperation,and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ double-layer metal CMOS process. The MSM51V17805B/BSL is available in a 28-pin plastic SOJ or 28-pin plastic TSOP. The MSM51V17805BSL (the self-refresh version) is specially designed for lower-power applications.
FEATURES
•2,097,152-word ´ 8-bit configuration
•Single 3.3 V power supply, ±0.3 V tolerance
• Input : LVTTL compatible, low input capacitance
•Output : LVTTL compatible, 3-state
•Refresh : 2048 cycles/32 ms, 2048 cycles/128 ms (SL version)
•Fast page mode with EDO, read modify write capability
•CAS before RAS refresh, hidden refresh, RAS-only refresh capability
•CAS before RAS self-refresh capability (SL version)
•Multi-bit test mode capability
•Package options:
28-pin 400 mil plastic SOJ |
(SOJ28-P-400-1.27) |
(Product : MSM51V17805B/BSL-xxJS) |
28-pin 400 mil plastic TSOP |
(TSOPII28-P-400-1.27-K) (Product : MSM51V17805B/BSL-xxTS-K) |
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xx indicates speed rank. |
PRODUCT FAMILY
Family |
Access Time (Max.) |
Cycle Time |
Power Dissipation |
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tRAC |
tAA |
tCAC |
tOEA |
(Min.) |
Operating (Max.) |
Standby (Max.) |
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MSM51V17805B/BSL-50 |
50 ns |
25 ns |
13 ns |
13 ns |
84 ns |
540 mW |
1.8 mW/ |
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MSM51V17805B/BSL-60 |
60 ns |
30 ns |
15 ns |
15 ns |
104 ns |
468 mW |
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0.72 mW (SL version) |
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MSM51V17805B/BSL-70 |
70 ns |
35 ns |
20 ns |
20 ns |
124 ns |
396 mW |
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377
MSM51V17805B/BSL |
¡ Semiconductor |
PIN CONFIGURATION (TOP VIEW) |
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VCC |
1 |
28 |
VSS |
VCC |
1 |
28 |
VSS |
DQ1 |
2 |
27 |
DQ8 |
DQ1 |
2 |
27 |
DQ8 |
DQ2 |
3 |
26 |
DQ7 |
DQ2 |
3 |
26 |
DQ7 |
DQ3 |
4 |
25 |
DQ6 |
DQ3 |
4 |
25 |
DQ6 |
DQ4 |
5 |
24 |
DQ5 |
DQ4 |
5 |
24 |
DQ5 |
WE 6 |
23 |
CAS |
WE 6 |
23 |
CAS |
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RAS |
7 |
22 |
OE |
RAS |
7 |
22 |
OE |
NC |
8 |
21 |
A9 |
NC |
8 |
21 |
A9 |
A10R |
9 |
20 |
A8 |
A10R |
9 |
20 |
A8 |
A0 |
10 |
19 |
A7 |
A0 |
10 |
19 |
A7 |
A1 |
11 |
18 |
A6 |
A1 |
11 |
18 |
A6 |
A2 |
12 |
17 |
A5 |
A2 |
12 |
17 |
A5 |
A3 |
13 |
16 |
A4 |
A3 |
13 |
16 |
A4 |
VCC 14 |
15 |
VSS |
VCC 14 |
15 |
VSS |
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28-Pin Plastic SOJ |
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28-Pin Plastic TSOP |
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(K Type) |
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Pin Name |
Function |
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A0 - A9, A10R |
Address Input |
RAS |
Row Address Strobe |
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CAS |
Column Address Strobe |
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DQ1 - DQ8 |
Data Input/Data Output |
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OE |
Output Enable |
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WE |
Write Enable |
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VCC |
Power Supply (3.3 V) |
VSS |
Ground (0 V) |
Note : The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin.
378
¡ Semiconductor MSM51V17805B/BSL
BLOCK DIAGRAM
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Timing |
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WE |
OE |
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RAS |
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Generator |
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I/O |
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8 |
Output |
8 |
CAS |
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Controller |
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Buffers |
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DQ1 - DQ8 |
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10 |
Column |
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10 |
Column Decoders |
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Input |
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Address |
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8 |
8 |
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Buffers |
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Buffers |
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Internal |
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Sense Amplifiers 8 |
I/O |
8 |
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A0 - A9 |
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Refresh |
Selector |
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Address |
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Counter |
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Control Clock |
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10 |
Row |
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Row |
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Memory |
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Address |
11 |
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Deco- |
Word |
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A10R |
1 |
Buffers |
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Cells |
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ders |
Drivers |
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VCC
On Chip
VBB Generator
VSS
379
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