NSC LF356N, LF356M, LF356H, LF356BH, LF155H Datasheet

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May 2000

LF155/LF156/LF355/LF356/LF357

JFET Input Operational Amplifiers

General Description

These are the first monolithic JFET input operational amplifiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

Advantages

nReplace expensive hybrid and module FET op amps

nRugged JFETs allow blow-out free handling compared with MOSFET input devices

nExcellent for low noise applications using either high or low source impedance Ð very low 1/f corner

nOffset adjust does not degrade drift or common-mode rejection as in most monolithic amplifiers

nNew output stage allows use of large capacitive loads (5,000 pF) without stability problems

nInternal compensation and large differential input voltage capability

Applications

nPrecision high speed integrators

nFast D/A and A/D converters

nHigh impedance buffers

nWideband, low noise, low drift amplifiers

nLogarithmic amplifiers

nPhotocell amplifiers

nSample and Hold circuits

Common Features

nLow input bias current: 30pA

nLow Input Offset Current: 3pA

nHigh input impedance: 1012Ω

n Low input noise current:

nHigh common-mode rejection ratio: 100 dB

nLarge dc voltage gain: 106 dB

Uncommon Features

 

 

LF155/

LF156/

LF357

Units

 

 

LF355

LF356

(AV=5)

 

j

Extremely

4

1.5

1.5

µs

 

fast settling

 

 

 

 

 

time to

 

 

 

 

 

0.01%

 

 

 

 

j

Fast slew

5

12

50

V/µs

 

rate

 

 

 

 

j

Wide gain

2.5

5

20

MHz

 

bandwidth

 

 

 

 

j

Low input

20

12

12

 

 

noise

 

 

 

 

 

voltage

 

 

 

 

Simplified Schematic

DS005646-1

*3 pF in LF357 series.

BI-FET, BI-FET IIare trademarks of National Semiconductor Corporation.

Amplifiers Operational Input JFET LF155/LF156/LF355/LF356/LF357

© 2000 National Semiconductor Corporation

DS005646

www.national.com

LF155/LF156/LF355/LF356/LF357

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required, contact the National Semiconductor Sales Office/Distributors for availability and specifications.

 

LF155/6

LF356B

LF355/6/7

Supply Voltage

±22V

±22V

±18V

Differential Input Voltage

±40V

±40V

±30V

Input Voltage Range (Note 2)

±20V

±20V

±16V

Output Short Circuit Duration

Continuous

Continuous

Continuous

TJMAX

 

 

 

H-Package

150ÊC

115ÊC

115ÊC

N-Package

 

100ÊC

100ÊC

M-Package

 

100ÊC

100ÊC

Power Dissipation at TA = 25ÊC (Notes 1,

 

 

 

8)

 

 

 

H-Package (Still Air)

560 mW

400 mW

400 mW

H-Package (400 LF/Min Air Flow)

1200 mW

1000 mW

1000 mW

N-Package

 

670 mW

670 mW

M-Package

 

380 mW

380 mW

Thermal Resistance (Typical) θJA

 

 

 

H-Package (Still Air)

160ÊC/W

160ÊC/W

160ÊC/W

H-Package (400 LF/Min Air Flow)

65ÊC/W

65ÊC/W

65ÊC/W

N-Package

 

130ÊC/W

130ÊC/W

M-Package

 

195ÊC/W

195ÊC/W

(Typical) θJC

 

 

 

H-Package

23ÊC/W

23ÊC/W

23ÊC/W

Storage Temperature Range

−65ÊC to +150ÊC

−65ÊC to +150ÊC

−65ÊC to +150ÊC

Soldering Information (Lead Temp.)

 

 

 

Metal Can Package

 

 

 

Soldering (10 sec.)

300ÊC

300ÊC

300ÊC

Dual-In-Line Package

 

 

 

Soldering (10 sec.)

260ÊC

260ÊC

260ÊC

Small Outline Package

 

 

 

Vapor Phase (60 sec.)

 

215ÊC

215ÊC

Infrared (15 sec.)

 

220ÊC

220ÊC

See AN-450 ªSurface Mounting Methods and Their Effect on Product Reliabilityº for other methods of soldering surface mount devices.

ESD tolerance

 

 

 

(100 pF discharged through 1.5 kΩ)

1000V

1000V

1000V

DC Electrical Characteristics

(Note 3)

Symbol

Parameter

 

Conditions

 

LF155/6

 

 

LF356B

 

LF355/6/7

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

Min

Typ

 

Max

Min

Typ

 

Max

Min

Typ

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOS

 

Input Offset Voltage

RS=50Ω, TA=25ÊC

 

3

 

5

 

3

 

5

 

3

10

mV

 

 

 

Over Temperature

 

 

 

7

 

 

 

6.5

 

 

13

mV

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOS/

T

Average TC of Input

RS=50Ω

 

5

 

 

 

5

 

 

 

5

 

µV/ÊC

 

 

Offset Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TC/

VOS

Change in Average TC

RS=50Ω, (Note 4)

 

0.5

 

 

 

0.5

 

 

 

0.5

 

µV/ÊC

 

 

with VOS Adjust

 

 

 

 

 

 

 

 

 

 

per mV

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOS

 

Input Offset Current

TJ=25ÊC, (Notes 3, 5)

 

3

 

20

 

3

 

20

 

3

50

pA

 

 

 

TJTHIGH

 

 

 

20

 

 

 

1

 

 

2

nA

IB

 

Input Bias Current

TJ=25ÊC, (Notes 3, 5)

 

30

 

100

 

30

 

100

 

30

200

pA

 

 

 

TJTHIGH

 

 

 

50

 

 

 

5

 

 

8

nA

R

 

Input Resistance

T

=25ÊC

 

1012

 

 

 

1012

 

 

 

1012

 

Ω

IN

 

 

J

 

 

 

 

 

 

 

 

 

 

 

 

 

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2

DC Electrical Characteristics (Continued)

(Note 3)

Symbol

Parameter

Conditions

 

LF155/6

 

LF356B

 

 

LF355/6/7

Units

 

 

 

 

 

 

 

 

 

 

 

Min

Typ

Max

Min

Typ

 

Max

Min

 

Typ

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AVOL

Large Signal Voltage

VS=±15V, TA=25ÊC

50

200

 

50

200

 

 

25

 

200

 

V/mV

 

Gain

VO=±10V, RL=2k

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Over Temperature

25

 

 

25

 

 

 

15

 

 

 

V/mV

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VO

Output Voltage Swing

VS=±15V, RL=10k

±12

±13

 

±12

±13

 

 

±12

 

±13

 

V

 

 

VS=±15V, RL=2k

±10

±12

 

±10

±12

 

 

±10

 

±12

 

V

VCM

Input Common-Mode

VS=±15V

±11

+15.1

 

±11

±15.1

 

 

+10

 

+15.1

 

V

 

Voltage Range

 

−12

 

−12

 

 

 

−12

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CMRR

Common-Mode

 

85

100

 

85

100

 

 

80

 

100

 

dB

 

Rejection Ratio

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PSRR

Supply Voltage

(Note 6)

85

100

 

85

100

 

 

80

 

100

 

dB

 

Rejection Ratio

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Electrical Characteristics

TA = TJ = 25ÊC, VS = ±15V

Parameter

 

LF155

 

LF355

LF156/356B

 

LF356

 

LF357

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Typ

 

Max

Typ

 

Max

Typ

Max

Typ

 

Max

Typ

 

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Supply

2

 

4

2

 

4

5

7

5

 

10

5

 

10

mA

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AC Electrical Characteristics

TA = TJ = 25ÊC, VS = ±15V

 

 

 

LF155/355

LF156/356B

LF156/356/

LF357

 

Symbol

Parameter

Conditions

 

 

LF356B

 

Units

 

 

 

Typ

Min

Typ

Typ

 

 

 

 

 

 

 

 

 

SR

Slew Rate

LF155/6: AV=1,

5

7.5

12

 

V/µs

 

 

LF357: AV=5

 

 

 

50

V/µs

GBW

Gain Bandwidth

 

2.5

 

5

20

MHz

 

Product

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ts

Settling Time to 0.01%

(Note 7)

4

 

1.5

1.5

µs

en

Equivalent Input Noise

RS=100Ω

 

 

 

 

 

 

Voltage

f=100 Hz

25

 

15

15

 

 

 

f=1000 Hz

20

 

12

12

 

 

 

 

 

 

 

 

 

in

Equivalent Input

f=100 Hz

0.01

 

0.01

0.01

 

 

Current Noise

f=1000 Hz

0.01

 

0.01

0.01

 

 

 

 

 

 

 

 

 

CIN

Input Capacitance

 

3

 

3

3

pF

Notes for Electrical Characteristics

Note 1: The maximum power dissipation for these devices must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature, TA. The maximum available power dissipation at any temperature is Pd=(TJMAX−T A)/θJA or the 25ÊC PdMAX, whichever is less.

Note 2: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.

Note 3: Unless otherwise stated, these test conditions apply:

 

 

LF155/156

LF356B

LF355/6/7

 

 

 

 

 

Supply Voltage, VS

 

±15VVS±20V

±15VVS±20V

VS=±15V

TA

 

−55ÊC TA+125ÊC

0ÊC TA+70ÊC

0ÊC TA+70ÊC

THIGH

 

+125ÊC

+70ÊC

+70ÊC

and VOS, IB and IOS are measured at VCM=0.

 

 

 

Note 4: The Temperature Coefficient of the adjusted input offset voltage changes only a small amount (0.5µV/ÊC typically) for each mV of adjustment from its o riginal unadjusted value. Common-mode rejection and open loop voltage gain are also unaffected by offset adjustment.

LF155/LF156/LF355/LF356/LF357

3

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LF155/LF156/LF355/LF356/LF357

Notes for Electrical Characteristics (Continued)

Note 5: The input bias currents are junction leakage currents which approximately double for every 10ÊC increase in the junction temperature, TJ. Due to limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient temperature as a result of internal power dissipation, Pd. TJ=TA+θJA Pd where θJA is the thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum.

Note 6: Supply Voltage Rejection is measured for both supply magnitudes increasing or decreasing simultaneously, in accordance with common practice.

Note 7: Settling time is defined here, for a unity gain inverter connection using 2 kΩ resistors for the LF155/6. It is the time required for the error voltage (the voltage at the inverting input pin on the amplifier) to settle to within 0.01% of its final value from the time a 10V step input is applied to the inverter. For the LF357, AV=−5, the feedback resistor from output to input is 2 kΩ and the output step is 10V (See Settling Time Test Circuit).

Note 8: Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate outside guaranteed limits.

Typical DC Performance Characteristics Curves are for LF155 and LF156 unless otherwise specified.

Input Bias Current

Input Bias Current

DS005646-37

DS005646-38

Input Bias Current

Voltage Swing

DS005646-39

DS005646-40

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Typical DC Performance Characteristics Curves are for LF155 and LF156 unless otherwise specified. (Continued)

Supply Current

Supply Current

 

DS005646-41

DS005646-42

 

 

Negative Current Limit

 

Positive Current Limit

DS005646-43

DS005646-44

Positive Common-Mode

Negative Common-Mode

Input Voltage Limit

Input Voltage Limit

DS005646-45

DS005646-46

LF155/LF156/LF355/LF356/LF357

5

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LF155/LF156/LF355/LF356/LF357

Typical DC Performance Characteristics Curves are for LF155 and LF156 unless otherwise specified. (Continued)

Open Loop Voltage Gain

Output Voltage Swing

DS005646-47

DS005646-48

Typical AC Performance Characteristics

Gain Bandwidth

Gain Bandwidth

DS005646-50

 

DS005646-49

Normalized Slew Rate

Output Impedance

DS005646-51

DS005646-52

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NSC LF356N, LF356M, LF356H, LF356BH, LF155H Datasheet

Typical AC Performance Characteristics (Continued)

Output Impedance

LF155 Small Signal Pulse Response, AV = +1

DS005646-5

DS005646-53

LF156 Small Signal Pulse Response, AV = +1

LF155 Large Signal Pulse Response, A = +1

 

V

DS005646-6 DS005646-8

LF156 Large Signal Puls

Inverter Settling Time

Response, AV = +1

 

DS005646-9

DS005646-55

LF155/LF156/LF355/LF356/LF357

7

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LF155/LF156/LF355/LF356/LF357

Typical AC Performance Characteristics (Continued)

Inverter Settling Time

Open Loop Frequency Response

 

DS005646-56

 

DS005646-57

Bode Plot

Bode Plot

DS005646-58 DS005646-59

Bode Plot Common-Mode Rejection Ratio

DS005646-60

DS005646-61

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