NSC LF411MWC, LF411CN, LF411ACH, LF411MH-883, LF411ACN Datasheet

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LF411 Low Offset, Low Drift JFET Input Operational Amplifier
General Description
These devices are low cost, high speed, JFET input opera­tional amplifiers with very low input offset voltage and guar­anteed input offset voltage drift. They require low supply cur­rent yet maintain a large gain bandwidth product and fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The LF411 is pin compatible with the standard LM741 allowing designers to immediately upgrade the overall performance of existing designs.
These amplifiers may be used in applications such as high speed integrators, fast D/A converters, sample and hold cir­cuits and many other circuits requiring low input offset volt­age and drift, low input bias current, high input impedance, high slew rate and wide bandwidth.
Features
n Internally trimmed offset voltage: 0.5 mV(max) n Input offset voltage drift: 10 µV/˚C(max) n Low input bias current: 50 pA n Low input noise current: n Wide gain bandwidth: 3 MHz(min) n High slew rate: 10V/µs(min) n Low supply current: 1.8 mA n High input impedance: 10
12
n Low total harmonic distortion A
V
=
10,
R
L
=
10k, V
O
=
20 Vp-p, BW=20 Hz−20 kHz:
<
0.02
%
n Low 1/f noise corner: 50 Hz n Fast settling time to 0.01%:2µs
Typical Connection
Ordering Information
LF411XYZ
X indicates electrical grade Y indicates temperature range
“M” for military “C” for commercial
Z indicates package type
“H” or “N”
Connection Diagrams
BI-FET II™is a trademark of National SemiconductorCorporation.
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Metal Can Package
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Note: Pin 4 connected to case.
Top View
Order Number LF411ACH
or LF411MH/883 (Note 1)
See NS Package Number H08A
Dual-In-Line Package
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Top View
Order Number LF411ACN,
LF411CN or LF411MJ/883 (Note 1)
See NS Package Number N08E or J08A
April 1998
LF411 Low Offset, Low Drift JFET Input Operational Amplifier
© 1999 National Semiconductor Corporation DS005655 www.national.com
Simplified Schematic
Note 1: Available per JM38510/11904
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Absolute Maximum Ratings (Note 2)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
LF411A LF411
Supply Voltage
±
22V
±
18V
Differential Input Voltage
±
38V
±
30V
Input Voltage Range
(Note 3)
±
19V
±
15V
Output Short Circuit
Duration Continuous Continuous
H Package N Package
Power Dissipation
(Notes 4, 11) 670 mW 670 mW
H Package N Package
T
j
max 150˚C 115˚C
θ
j
A 162˚C/W (Still Air) 120˚C/W
65˚C/W (400 LF/min
Air Flow)
θ
j
C 20˚C/W
Operating Temp.
Range (Note 5) (Note 5)
Storage Temp.
Range −65˚CT
A
150˚C −65˚CTA≤150˚C
Lead Temp.
(Soldering, 10 sec.)
260˚C 260˚C
ESD Tolerance Rating to be determined.
DC Electrical Characteristics (Note 6)
Symbol Parameter Conditions LF411A LF411 Units
Min Typ Max Min Typ Max
V
OS
Input Offset Voltage R
S
=
10 k,T
A
=
25˚C 0.3 0.5 0.8 2.0 mV
V
OS
/T Average TC of Input R
S
=
10 k(Note 7) 7 10 7 20 µV/˚C
Offset Voltage (Note 7)
I
OS
Input Offset Current V
S
=
±
15V T
j
=
25˚C 25 100 25 100 pA
(Notes 6, 8) T
j
=
70˚C 2 2 nA
T
j
=
125˚C 25 25 nA
I
B
Input Bias Current V
S
=
±
15V T
j
=
25˚C 50 200 50 200 pA
(Notes 6, 8) T
j
=
70˚C 4 4 nA
T
j
=
125˚C 50 50 nA
R
IN
Input Resistance T
j
=
25˚C 10
12
10
12
A
VOL
Large Signal Voltage V
S
=
±
15V, V
O
=
±
10V, 50 200 25 200 V/mV
Gain R
L
=
2k, T
A
=
25˚C
Over Temperature 25 200 15 200 V/mV
V
O
Output Voltage Swing V
S
=
±
15V, R
L
=
10k
±12±
13.5
±12±
13.5 V
V
CM
Input Common-Mode
±
16 +19.5
±
11 +14.5 V
Voltage Range −16.5 −11.5 V
CMRR Common-Mode R
S
10k 80 100 70 100 dB
Rejection Ratio
PSRR Supply Voltage (Note 9) 80 100 70 100 dB
Rejection Ratio
I
S
Supply Current 1.8 2.8 1.8 3.4 mA
AC Electrical Characteristic (Note 6)
Symbol Parameter Conditions LF411A LF411 Units
Min Typ Max Min Typ Max
SR Slew Rate V
S
=
±
15V, T
A
=
25˚C 10 15 8 15 V/µs
GBW Gain-Bandwidth Product V
S
=
±
15V, T
A
=
25˚C 3 4 2.7 4 MHz
e
n
Equivalent Input Noise Voltage T
A
=
25˚C, R
S
=
100,
f=1 kHz
25 25
i
n
Equivalent Input Noise Current T
A
=
25˚C, f=1 kHz 0.01 0.01
Note 2: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits.
Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
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AC Electrical Characteristic (Note 6) (Continued)
Note 4: For operating at elevated temperature, these devices must be derated based on a thermal resistance of θjA. Note 5: These devices are available in both the commercial temperature range 0˚CT
A
70˚C and the military temperature range −55˚CTA≤125˚C. The temperature range is designated by the position just before the package type in the device number. A “C” indicates the commercial temperature range and an “M” indicates the military temperature range. The military temperature range is available in “H” package only.
Note 6: Unless otherwise specified, the specifications apply over the full temperature range and for V
S
=
±
20V for the LF411A and for V
S
=
±
15V for the LF411. VOS,
I
B
, and IOSare measured at V
CM
=
0.
Note 7: The LF411A is 100%tested to this specification. The LF411 is sample tested to insure at least 90%of the units meet this specification. Note 8: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, T
j
. Due to limited pro­duction test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient tem­perature as a result of internal power dissipation, P
D.Tj
=
T
A+θjAPD
where θjAis the thermal resistance from junction to ambient. Use of a heat sink is recommended
if input bias current is to be kept to a minimum. Note 9: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice, from
±
15V to±5V for the LF411 and from±20V to±5V for the LF411A.
Note 10: RETS 411X for LF411MH and LF411MJ military specifications. Note 11: Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate out-
side guaranteed limits.
Typical Performance Characteristics
Input Bias Current
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Input Bias Current
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Supply Current
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Positive Common-Mode Input Voltage Limit
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Negative Common-Mode Input Voltage Limit
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Positive Current Limit
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