NSC DS90C031TMX, DS90C031TM, DS90C031E-MIL, 5962-9583301Q2A Datasheet

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June 1998

DS90C031

LVDS Quad CMOS Differential Line Driver

General Description

The DS90C031 is a quad CMOS differential line driver designed for applications requiring ultra low power dissipation and high data rates. The device is designed to support data rates in excess of 155.5 Mbps (77.7 MHz) utilizing Low Voltage Differential Signaling (LVDS) technology.

The DS90C031 accepts TTL/CMOS input levels and translates them to low voltage (350 mV) differential output signals. In addition the driver supports a TRI-STATE® function that may be used to disable the output stage, disabling the load current, and thus dropping the device to an ultra low idle power state of 11 mW typical.

The DS90C031 and companion line receiver (DS90C032) provide a new alternative to high power psuedo-ECL devices for high speed point-to-point interface applications.

Features

n>155.5 Mbps (77.7 MHz) switching rates

n±350 mV differential signaling

nUltra low power dissipation

n400 ps maximum differential skew (5V, 25ÊC)

n3.5 ns maximum propagation delay

nIndustrial operating temperature range

nMilitary operating temperature range option

nAvailable in surface mount packaging (SOIC) and (LCC)

nPin compatible with DS26C31, MB571 (PECL) and

41LG (PECL)

nCompatible with IEEE 1596.3 SCI LVDS standard

nConforms to ANSI/TIA/EIA-644 LVDS standard

nAvailable to Standard Microcircuit Drawing (SMD) 5962-95833

Connection Diagrams

Dual-In-Line

LCC Package

DS011946-1

Order Number DS90C031TM

See NS Package Number M16A

DS011946-33

Order Number DS90C031E-QML

See NS Package Number E20A

For Complete Military Specifications,

refer to appropriate SMD or MDS.

TRI-STATE® is a registered trademark of National Semiconductor Corporation.

Driver Line Differential CMOS Quad LVDS DS90C031

© 1998 National Semiconductor Corporation

DS011946

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Functional Diagram

DS011946-2

Truth Table

DRIVER

Enables

 

Input

Outputs

 

 

 

 

 

 

EN

 

EN*

DIN

DOUT+

DOUT−

L

 

H

X

Z

Z

 

 

 

 

 

 

All other combinations

 

L

L

H

 

 

 

 

 

 

of ENABLE inputs

 

H

H

L

 

 

 

 

 

 

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2

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.

Supply Voltage (VCC)

−0.3V to +6V

Input Voltage (DIN)

−0.3V to (V CC + 0.3V)

Enable Input Voltage (EN, EN*)

−0.3V to (V CC + 0.3V)

Output Voltage (DOUT+, DOUT− )

−0.3V to (V CC + 0.3V)

Short Circuit Duration

 

(DOUT+, DOUT− )

Continuous

Maximum Package Power Dissipation @ +25ÊC

M Package

1068 mW

E Package

1900 mW

Derate M Package

8.5 mW/ÊC above +25ÊC

Derate E Package

12.8 mW/ÊC above +25ÊC

Storage Temperature Range

−65ÊC to +150ÊC

Lead Temperature Range

 

Soldering (4 sec.)

+260ÊC

Maximum Junction Temperature

 

(DS90C031T)

+150ÊC

Maximum Junction Temperature

 

(DS90C031E)

+175ÊC

ESD Rating (Note 7)

 

(HBM, 1.5 kW, 100 pF)

³ 3,500V

(EIAJ, 0 W, 200 pF)

³ 250V

Recommended Operating

Conditions

 

Min

Typ

Max

Units

Supply Voltage (VCC)

+4.5

+5.0

+5.5

V

Operating Free Air Temperature (TA)

 

 

 

DS90C031T

−40

+25

+85

ÊC

DS90C031E

−55

+25

+125

ÊC

Electrical Characteristics

Over supply voltage and operating temperature ranges, unless otherwise specified. (Notes 2, 3)

Symbol

Parameter

Conditions

 

Pin

Min

Typ

Max

Units

 

 

 

 

 

 

 

 

 

VOD1

Differential Output Voltage

RL = 100W (Figure 1)

 

DOUT− ,

250

345

450

mV

DVOD1

Change in Magnitude of VOD1

 

 

DOUT+

 

4

35

|mV|

 

for Complementary Output

 

 

 

 

 

 

 

 

States

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOS

Offset Voltage

 

 

 

1.125

1.25

1.375

V

DVOS

Change in Magnitude of VOS for

 

 

 

 

5

25

|mV|

 

Complementary Output States

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOH

Output Voltage High

RL = 100W

 

 

 

1.41

1.60

V

VOL

Output Voltage Low

 

 

 

0.90

1.07

 

V

VIH

Input Voltage High

 

 

DIN,

2.0

 

VCC

V

VIL

Input Voltage Low

 

 

EN,

GND

 

0.8

V

 

 

 

 

EN*

 

 

 

 

II

Input Current

VIN = VCC, GND, 2.5V or 0.4V

−10

±1

+10

µA

 

VCL

Input Clamp Voltage

ICL = −18 mA

 

 

−1.5

−0.8

 

V

IOS

Output Short Circuit Current

VOUT = 0V (Note 8)

 

DOUT− ,

 

−3.5

−5.0

mA

IOZ

Output TRI-STATE Current

EN = 0.8V and EN* = 2.0V,

 

DOUT+

−10

±1

+10

µA

 

 

VOUT = 0V or VCC

 

 

 

 

 

 

ICC

No Load Supply Current

DIN = VCC or GND

DS90C031T

VCC

 

1.7

3.0

mA

 

Drivers Enabled

DIN = 2.5V or 0.4V

 

 

 

4.0

6.5

mA

ICCL

Loaded Supply Current

RL = 100W All Channels

DS90C031T

 

 

15.4

21.0

mA

 

Drivers Enabled

VIN = VCC or GND

 

 

 

 

 

 

 

DS90C031E

 

 

15.4

25.0

mA

 

 

(all inputs)

 

 

 

 

 

 

 

 

 

 

ICCZ

No Load Supply Current

DIN = VCC or GND

DS90C031T

 

 

2.2

4.0

mA

 

Drivers Disabled

EN = GND, EN* = VCC

DS90C031E

 

 

2.2

10.0

mA

 

 

 

 

 

 

 

 

 

Switching Characteristics

VCC = +5.0V, TA = +25ÊC DS90C031T. (Notes 3, 4, 6, 9)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

 

 

 

 

 

 

 

tPHLD

Differential Propagation Delay High to Low

RL = 100W, CL = 5 pF

1.0

2.0

3.0

ns

tPLHD

Differential Propagation Delay Low to High

(Figure 2 and Figure 3)

1.0

2.1

3.0

ns

tSKD

Differential Skew |tPHLD ± tPLHD|

 

0

80

400

ps

tSK1

Channel-to-Channel Skew (Note 4)

 

0

300

600

ps

3

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Switching Characteristics (Continued)

VCC = +5.0V, TA = +25ÊC DS90C031T. (Notes 3, 4, 6, 9)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

tTLH

Rise Time

 

 

0.35

1.5

ns

tTHL

Fall Time

 

 

0.35

1.5

ns

tPHZ

Disable Time High to Z

RL = 100Ω,

 

2.5

10

ns

tPLZ

Disable Time Low to Z

CL = 5 pF

 

2.5

10

ns

tPZH

Enable Time Z to High

(Figure 4 and Figure 5)

 

2.5

10

ns

 

 

tPZL

Enable Time Z to Low

 

 

2.5

10

ns

Switching Characteristics

VCC = +5.0V ± 10%, TA = −40ÊC to +85ÊC DS90C031T. (Notes 3, 4, 5, 6, 9)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

 

 

 

 

 

 

 

tPHLD

Differential Propagation Delay High to Low

RL = 100Ω, CL = 5 pF

0.5

2.0

3.5

ns

tPLHD

Differential Propagation Delay Low to High

(Figure 2 and Figure 3)

0.5

2.1

3.5

ns

tSKD

Differential Skew |tPHLD ± tPLHD|

 

0

80

900

ps

tSK1

Channel-to-Channel Skew (Note 4)

 

0

0.3

1.0

ns

tSK2

Chip to Chip Skew (Note 5)

 

 

 

3.0

ns

tTLH

Rise Time

 

 

0.35

2.0

ns

tTHL

Fall Time

 

 

0.35

2.0

ns

tPHZ

Disable Time High to Z

RL = 100Ω,

 

2.5

15

ns

tPLZ

Disable Time Low to Z

CL = 5 pF

 

2.5

15

ns

tPZH

Enable Time Z to High

(Figure 4 and Figure 5)

 

2.5

15

ns

 

 

tPZL

Enable Time Z to Low

 

 

2.5

15

ns

Switching Characteristics

VCC = +5.0V ± 10%, TA = −55ÊC to +125ÊC DS90C031E. (Notes 3, 4, 5, 6, 9, 10)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

 

 

 

 

 

 

 

tPHLD

Differential Propagation Delay High to Low

RL = 100Ω, CL = 20 pF

0.5

2.0

5.0

ns

tPLHD

Differential Propagation Delay Low to High

(Figure 3)

0.5

2.1

5.0

ns

 

 

CL Connected between

 

 

 

 

tSKD

Differential Skew |tPHLD ± tPLHD|

0

0.08

3.0

ns

each Output and GND

tSK1

Channel-to-Channel Skew (Note 4)

0

0.3

3.0

ns

 

tSK2

Chip to Chip Skew (Note 5)

 

 

 

4.5

ns

tPHZ

Disable Time High to Z

RL = 100Ω,

 

2.5

20

ns

tPLZ

Disable Time Low to Z

CL = 5 pF

 

2.5

20

ns

 

 

(Figure 4 and Figure 5)

 

 

 

 

tPZH

Enable Time Z to High

 

2.5

20

ns

 

 

tPZL

Enable Time Z to Low

 

 

2.5

20

ns

Parameter Measurement Information

DS011946-3

FIGURE 1. Driver VOD and VOS Test Circuit

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NSC DS90C031TMX, DS90C031TM, DS90C031E-MIL, 5962-9583301Q2A Datasheet

Parameter Measurement Information (Continued)

DS011946-4

FIGURE 2. Driver Propagation Delay and Transition Time Test Circuit

DS011946-5

FIGURE 3. Driver Propagation Delay and Transition Time Waveforms

DS011946-6

FIGURE 4. Driver TRI-STATE Delay Test Circuit

5

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