Motorola MC14000UBCL, MC14000UBCP, MC14000UBD Datasheet

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Motorola MC14000UBCL, MC14000UBCP, MC14000UBD Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Dual 3-Input •NOR" Gate

Plus Inverter

The MC14000UB dual 3±input NOR gate plus inverter is constructed with MOS P±channel and N±channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired.

Diode Protection on All Inputs

Supply Voltage Range = 3.0 Vdc to 18 Vdc

Logic Swing Independent of Fanout

Pin±for±Pin Replacement for CD4000UB

MAXIMUM RATINGS* (Voltages Referenced to VSS)

Symbol

Parameter

Value

 

Unit

 

 

 

 

 

VDD

DC Supply Voltage

± 0.5 to +

18.0

V

Vin, Vout

Input or Output Voltage (DC or Transient)

± 0.5 to VDD + 0.5

V

lin, lout

Input or Output Current (DC or Transient),

± 10

 

mA

 

per Pin

 

 

 

 

 

 

 

 

PD

Power Dissipation, per Package²

500

 

mW

Tstg

Storage Temperature

± 65 to +

150

_C

TL

Lead Temperature (8±Second Soldering)

260

 

_C

* Maximum Ratings are those values beyond which damage to the device may occur. ²Temperature Derating:

Plastic ªP and D/DWº Packages: ± 7.0 mW/C From 65_C To 125_C Ceramic ªLº Packages: ± 12 mW/C From 100_C To 125_C

 

CIRCUIT SCHEMATIC

 

VDD

14

11

12

13

8

 

 

 

 

 

3

 

 

 

 

 

 

4

 

 

 

 

 

 

 

 

 

 

 

 

9

5

 

 

 

 

 

 

VSS

7

6

 

 

 

10

MC14000UB

L SUFFIX

CERAMIC

CASE 632

P SUFFIX

PLASTIC

CASE 646

D SUFFIX

SOIC

CASE 751A

ORDERING INFORMATION

MC14XXXUBCP

Plastic

MC14XXXUBCL

Ceramic

MC14XXXUBD

SOIC

TA = ± 55° to 125°C for all packages.

 

LOGIC DIAGRAM

3

 

4

6

5

11

12 10

13

8

9

VDD = PIN 14

VSS = PIN 7

PIN ASSIGNMENT

NC

1

14

VDD

NC

2

13

IN 3B

IN 1A

3

12

IN 2B

IN 2A

4

11

IN 1B

IN 3A

5

10

OUTB

OUTA

6

9

OUTC

VSS

7

8

IN 1C

NC = NO CONNECTION

REV 3 1/94

Motorola, Inc. 1995

ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)

 

 

 

VDD

± 55_C

 

25_C

 

+ 125_C

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

Symbol

Vdc

Min

Max

Min

Typ #

Max

Min

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

Output Voltage

ª0º Level

VOL

5.0

Ð

0.05

Ð

0

0.05

Ð

0.05

Vdc

Vin = VDD or 0

 

 

10

Ð

0.05

Ð

0

0.05

Ð

0.05

 

 

 

 

15

Ð

0.05

Ð

0

0.05

Ð

0.05

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ª1º Level

VOH

5.0

4.95

Ð

4.95

5.0

Ð

4.95

Ð

Vdc

Vin = 0 or VDD

 

 

10

9.95

Ð

9.95

10

Ð

9.95

Ð

 

 

 

 

15

14.95

Ð

14.95

15

Ð

14.95

Ð

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Voltage

ª0º Level

VIL

 

 

 

 

 

 

 

 

Vdc

(VO = 4.5 Vdc)

 

 

5.0

Ð

1.0

Ð

2.25

1.0

Ð

1.0

 

(VO = 9.0 Vdc)

 

 

10

Ð

2.0

Ð

4.50

2.0

Ð

2.0

 

(VO = 13.5 Vdc)

 

 

15

Ð

2.5

Ð

6.75

2.5

Ð

2.5

 

(VO = 0.5 Vdc)

ª1º Level

VIH

5.0

4.0

Ð

4.0

2.75

Ð

4.0

Ð

Vdc

 

 

 

(VO = 1.0 Vdc)

 

 

10

8.0

Ð

8.0

5.50

Ð

8.0

Ð

 

(VO = 1.5 Vdc)

 

 

15

12.5

Ð

12.5

8.25

Ð

12.5

Ð

 

Output Drive Current

 

IOH

 

 

 

 

 

 

 

 

mAdc

(VOH = 2.5 Vdc)

Source

 

5.0

± 1.2

Ð

± 1.0

± 1.7

Ð

± 0.7

Ð

 

(VOH = 4.6 Vdc)

 

 

5.0

± 0.25

Ð

± 0.2

± 0.36

Ð

± 0.14

Ð

 

(VOH = 9.5 Vdc)

 

 

10

± 0.62

Ð

± 0.5

± 0.9

Ð

± 0.35

Ð

 

(VOH = 13.5 Vdc)

 

 

15

± 1.8

Ð

± 1.5

± 3.5

Ð

± 1.1

Ð

 

(VOL = 0.4 Vdc)

Sink

IOL

5.0

0.64

Ð

0.51

0.88

Ð

0.36

Ð

mAdc

(VOL = 0.5 Vdc)

 

 

10

1.6

Ð

1.3

2.25

Ð

0.9

Ð

 

(VOL = 1.5 Vdc)

 

 

15

4.2

Ð

3.4

8.8

Ð

2.4

Ð

 

Input Current

 

Iin

15

Ð

± 0.1

Ð

± 0.00001

± 0.1

Ð

± 1.0

μAdc

Input Capacitance

 

Cin

Ð

Ð

Ð

Ð

5.0

7.5

Ð

Ð

pF

(Vin = 0)

 

 

 

 

 

 

 

 

 

 

 

Quiescent Current

 

IDD

5.0

Ð

0.25

Ð

0.0005

0.25

Ð

7.5

μAdc

(Per Package)

 

 

10

Ð

0.5

Ð

0.0010

0.5

Ð

15

 

 

 

 

15

Ð

1.0

Ð

0.0015

1.0

Ð

30

 

 

 

 

 

 

 

 

 

 

 

 

 

Total Supply Current**²

 

IT

5.0

 

 

IT = (0.3 μA/kHz) f + IDD/N

 

 

μAdc

(Dynamic plus Quiescent,

 

10

 

 

IT = (0.6 μA/kHz) f + IDD/N

 

 

 

Per Gate, CL = 50 pF)

 

 

15

 

 

IT = (0.8 μA/kHz) f + IDD/N

 

 

 

#Data labelled ªTypº is not to be used for design purposes but is intended as an indication of the IC's potential performance. ** The formulas given are for the typical characteristics only at 25_C.

²T o calculate total supply current at loads other than 50 pF: IT(CL) = IT(50 pF) + (CL ± 50) Vfk

where: IT is in μH (per package), CL in pF, V = (VDD ± VSS) in volts, f in kHz is input frequency, and k = 0.001 x the number of exercised gates per package.

This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance

circuit. For proper operation, Vin and Vout should be constrained to the range VSS (Vin or Vout) VDD.

Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open.

MOTOROLA CMOS LOGIC DATA

MC14000UB

 

3

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