Philips TDA8358J Datasheet

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INTEGRATED CIRCUITS

DATA SHEET

TDA8358J

Full bridge vertical deflection output circuit in LVDMOS with east-west amplifier

Product specification

 

1999 Dec 22

File under Integrated Circuits, IC02

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Philips Semiconductors

Product specification

 

 

Full bridge vertical deflection output circuit

TDA8358J

in LVDMOS with east-west amplifier

FEATURES

Few external components required

High efficiency fully DC coupled vertical bridge output circuit

Vertical flyback switch with short rise and fall times

Built-in guard circuit

Thermal protection circuit

Improved EMC performance due to differential inputs

East-west output stage.

QUICK REFERENCE DATA

GENERAL DESCRIPTION

The TDA8358J is a power circuit for use in 90° and 110° colour deflection systems for 25 to 200 Hz field frequencies, and for 4 : 3 and 16 : 9 picture tubes. The IC contains a vertical deflection output circuit, operating as a high efficiency class G system. The full bridge output circuit allows DC coupling of the deflection coil in combination with single positive supply voltages.

The east-west output stage is able to supply the sink current for a diode modulator circuit.

The IC is constructed in a Low Voltage DMOS (LVDMOS) process that combines bipolar, CMOS and DMOS devices. DMOS transistors are used in the output stage because of absence of second breakdown.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

Supplies

 

 

 

 

 

 

 

 

 

 

 

 

 

VP

supply voltage

 

7.5

12

18

V

VFB

flyback supply voltage

 

2VP

45

66

V

Iq(P)(av)

average quiescent supply current

during scan

10

15

mA

Iq(FB)(av)

average quiescent flyback supply current

during scan

10

mA

PEW

east-west power dissipation

 

4

W

Ptot

total power dissipation

 

15

W

Inputs and outputs

 

 

 

 

 

 

 

 

 

 

 

 

Vi(dif)(p-p)

differential input voltage (peak-to-peak value)

 

1000

1500

mV

Io(p-p)

output current (peak-to-peak value)

 

3.2

A

Flyback switch

 

 

 

 

 

 

 

 

 

 

 

 

 

Io(peak)

maximum (peak) output current

t 1.5 ms

±1.8

A

East-west amplifier

 

 

 

 

 

 

 

 

 

 

 

 

Vo

output voltage

 

68

V

VI(bias)

input bias voltage

 

2

3.2

V

Io

output current

 

750

mA

Thermal data; in accordance with IEC 747-1

 

 

 

 

 

 

 

 

 

 

 

 

Tstg

storage temperature

 

55

+150

°C

Tamb

ambient temperature

 

25

+75

°C

Tj

junction temperature

 

150

°C

1999 Dec 22

2

Philips TDA8358J Datasheet

Philips Semiconductors

Product specification

 

 

Full bridge vertical deflection output circuit

TDA8358J

in LVDMOS with east-west amplifier

ORDERING INFORMATION

TYPE

 

 

PACKAGE

 

 

 

 

 

NUMBER

 

NAME

DESCRIPTION

VERSION

 

 

 

 

 

 

 

TDA8358J

 

DBS13P

plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm)

SOT141-6

 

 

 

 

 

BLOCK DIAGRAM

 

 

 

Vi(p-p)

VI(bias)

0

Vi(p-p)

VI(bias)

0

Ii(p-p)

II(av)

0

 

COMP

GUARD

VP

VFB

 

 

 

13

11

3

9

 

 

 

COMP.

GUARD

 

 

 

 

 

CIRCUIT

CIRCUIT

 

M5

 

 

 

 

 

 

 

 

 

 

 

 

 

D2

 

 

 

 

 

D3

 

 

 

 

 

M2

 

 

 

 

 

 

D1

 

10

OUTA

INA

1

 

 

 

 

 

 

 

 

 

 

 

M4

 

 

 

 

INPUT

 

 

 

12

FEEDB

 

AND

 

 

 

 

 

 

 

 

 

 

 

FEEDBACK

 

 

 

 

 

CIRCUIT

 

 

 

 

 

INB

2

 

M1

 

 

 

 

 

 

 

 

4

OUTB

 

 

 

M3

TDA8358J

 

 

 

 

 

 

INEW

5

 

 

M6

8

OUTEW

 

 

 

6

7

 

MGL866

 

 

 

 

 

 

 

 

 

VGND

EWGND

 

 

Fig.1 Block diagram.

1999 Dec 22

3

Philips Semiconductors

Product specification

 

 

Full bridge vertical deflection output circuit

TDA8358J

in LVDMOS with east-west amplifier

PINNING

SYMBOL

PIN

DESCRIPTION

 

 

 

INA

1

input A

 

 

 

INB

2

input B

 

 

 

VP

3

supply voltage

OUTB

4

output B

 

 

 

INEW

5

east-west input

 

 

 

VGND

6

vertical ground

 

 

 

EWGND

7

east-west ground

 

 

 

OUTEW

8

east-west output

 

 

 

VFB

9

flyback supply voltage

OUTA

10

output A

 

 

 

GUARD

11

guard output

 

 

 

FEEDB

12

feedback input

 

 

 

COMP

13

compensation input

 

 

 

handbook, halfpage

INA 1

INB 2

VP 3

OUTB 4

INEW 5

VGND 6

TDA8358J

EWGND 7

OUTEW 8

VFB 9

OUTA 10

GUARD 11

FEEDB 12

COMP 13

MGL867

The die has been glued to the metal block of the package. If the metal block is not insulated from the heatsink, the heatsink shall only be connected directly to pin VGND.

FUNCTIONAL DESCRIPTION

Vertical output stage

The vertical driver circuit has a bridge configuration. The deflection coil is connected between the complimentary driven output amplifiers. The differential

input circuit is voltage driven. The input circuit is specially designed for direct connection to driver circuits delivering a differential signal but it is also suitable for single-ended applications. The output currents of the driver device are converted to voltages by the conversion resistors

RCV1 and RCV2 (see Fig.3) connected to pins INA

and INB. The differential input voltage is compared with the voltage across the measuring resistor RM, providing internal feedback information. The voltage across RM is proportional with the output current. The relationship between the differential input current and the output current is defined by:

2 × Ii(dif)(p-p) × RCV = Io(p-p) × RM

The output current should measure 0.5 to 3.2 A (p-p) and is determined by the value of RM and RCV. The allowable input voltage range is 100 mV to 1.6 V for each input. The formula given does not include internal bondwire resistances. Depending on the value of RM and the internal bondwire resistance (typical value 50 mΩ) the actual value of the current in the deflection coil will be about 5% lower than calculated.

Flyback supply

The flyback voltage is determined by the flyback supply voltage VFB. The principle of two supply voltages (class G) allows to use an optimum supply voltage VP for scan and an optimum flyback supply voltage VFB for flyback, thus very high efficiency is achieved. The available flyback output voltage across the coil is almost equal to VFB, due to the absence of a coupling capacitor which is not required in a bridge configuration. The very short

rise and fall times of the flyback switch are determined mainly by the slew-rate value of more than 300 V/μs.

Protection

The output circuit contains protection circuits for:

Too high die temperature

Overvoltage of output A.

Fig.2 Pin configuration.

1999 Dec 22

4

Philips Semiconductors

Product specification

 

 

Full bridge vertical deflection output circuit

TDA8358J

in LVDMOS with east-west amplifier

Guard circuit

A guard circuit with output pin GUARD is provided.

The guard circuit generates a HIGH-level during the flyback period. The guard circuit is also activated for one of the following conditions:

During thermal protection (Tj 170 °C)

During an open-loop condition.

The guard signal can be used for blanking the picture tube and signalling fault conditions. The vertical synchronization pulses of the guard signal can be used by an On Screen Display (OSD) microcontroller.

Damping resistor compensation

HF loop stability is achieved by connecting a damping resistor RD1 (see Fig.4) across the deflection coil. The current values in RD1 during scan and flyback are significantly different. Both the resistor current and the deflection coil current flow into measuring resistor RM,

resulting in a too low deflection coil current at the start of the scan.

The difference in the damping resistor current values during scan and flyback have to be externally compensated in order to achieve a short settling time.

For that purpose a compensation resistor RCMP is connected between pins OUTA and COMP. The value of RCMP is calculated by:

(VFB Vloss(FB) VP) × RD1 × (RS + 300)

R = -------------------------------------------------------------------------------------------------------------

CMP (VFB Vloss(FB) Icoil(peak) × Rcoil) × RM

where:

Rcoil is the coil resistance

Vloss(FB) is the voltage loss between pins VFB and OUTA at flyback.

East-west amplifier

The east-west amplifier is a current driver sinking the current of a diode modulator circuit. A feedback resistor REWF (see Fig.4) has to be connected between

the input and output of the inverting east-west amplifier in order to convert the east-west correction input current into an output voltage. The output voltage of the east-west circuit at pin OUTEW is given by:

Vo Ii × REWF + Vi

The maximum output voltage is Vo(max) = 68 V, while the maximum output current of the circuit is Io(max) = 750 mA.

1999 Dec 22

5

Philips Semiconductors

Product specification

 

 

Full bridge vertical deflection output circuit

TDA8358J

in LVDMOS with east-west amplifier

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

VP

supply voltage

 

18

V

VFB

flyback supply voltage

 

68

V

VVGND-EWGND

voltage difference between

 

0.3

V

 

pins VGND and EWGND

 

 

 

 

 

 

 

 

 

 

Vn

DC voltage

 

 

 

 

 

pins OUTA and OUTEW

note 1

68

V

 

pin OUTB

 

VP

V

 

pins INA, INB, INEW, GUARD,

 

0.5

VP

V

 

FEEDB, and COMP

 

 

 

 

 

 

 

 

 

 

In

DC current

 

 

 

 

 

pins OUTA and OUTB

during scan (p-p)

3.2

A

 

pins OUTA and OUTB

at flyback (peak); t 1.5 ms

±1.8

A

 

pins INA, INB, INEW, GUARD,

 

20

+20

mA

 

FEEDB, and COMP

 

 

 

 

 

pin OUTEW

 

750

mA

 

 

 

 

 

 

Ilu

latch-up current

input current into any pin;

+200

mA

 

 

pin voltage is 1.5 × VP; Tj = 150 °C

 

 

 

 

 

input current out of any pin;

200

mA

 

 

pin voltage is 1.5 × VP; Tj = 150 °C

 

 

 

Ves

electrostatic handling voltage

machine model; note 2

300

+300

V

 

 

human body model; note 3

2000

+2000

V

 

 

 

 

 

 

PEW

east-west power dissipation

note 4

4

W

Ptot

total power dissipation

 

15

W

Tstg

storage temperature

 

55

+150

°C

Tamb

ambient temperature

 

25

+75

°C

Tj

junction temperature

note 5

150

°C

Notes

1.When the voltage at pin OUTA supersedes 70 V the circuit will limit the voltage.

2.Equivalent to 200 pF capacitance discharge through a 0 Ω resistor.

3.Equivalent to 100 pF capacitance discharge through a 1.5 kΩ resistor.

4.For repetitive time durations of t < 0.1 ms or a non repetitive time duration of t < 5 ms the maximum (peak) east-west power dissipation PEW(peak) = 15 W.

5.Internally limited by thermal protection at Tj 170 °C.

THERMAL CHARACTERISTICS

In accordance with IEC 747-1.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

 

 

 

 

 

Rth(j-c)

thermal resistance from junction to case

 

4

K/W

Rth(j-a)

thermal resistance from junction to ambient

in free air

40

K/W

1999 Dec 22

6

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