Philips tea5570 DATASHEETS

INTEGRATED CIRCUITS

DATA SHEET

TEA5570

RF/IF circuit for AM/FM radio

Product specification			September 1987
File under Integrated Circuits, IC01

Philips Semiconductors	Product specification
RF/IF circuit for AM/FM radio	TEA5570

GENERAL DESCRIPTION

The TEA5570 is a monolithic integrated radio circuit for use in portable receivers and clock radios. The IC is also applicable to mains-fed AM and AM/FM receivers and car radio-receivers. Apart from the AM/FM switch function the IC incorporates for AM a double balanced mixer, 'one-pin' oscillator, i.f. amplifier with a.g.c. and detector, and a level detector for tuning indication. The FM circuitry comprises i.f. stages with a symmetrical limiter for a ratio detector. A level detector for mono/stereo switch information and/or indication complete the FM part.

Features

∙Simple d.c. switching for AM to FM by only one d.c. contact to ground (no switch contacts in the i.f. channel, a.f. or level detector outputs)

∙AM and FM gain control

∙Low current consumption (Itot = 6 mA)

∙Low voltage operation (VP = 2,7 to 9 V)

∙Ability to handle large AM signals; good i.f. suppression

∙Applicable for inductive, capacitive and diode tuning

∙Double smoothing of a.g.c. line

∙Short-wave range up to 30 MHz

∙Lumped or distributed i.f. selectivity with coil and/or ceramic filters

∙AM and a.g.c. output voltage control

∙Distribution of PCB wiring provides good frequency stability

∙Economic design for 'AM only' receivers.

QUICK REFERENCE DATA (at Tamb = 25 °C)

Supply voltage	VP = V7-16	typ.	5,4	V
Supply current	I7	typ.	6,2	mA
AM performance (pin 2) for m = 0,3
Sensitivity
at Vo = 10 mV	Vi	typ.	1,7	μV
at S/N = 26 dB	Vi	typ.	16	μV
A.F. output voltage at Vi = 1 mV	Vo	typ.	100	mV
Total harmonic distortion at Vi = 1 mV	THD	typ.	0,5	%
FM performance (pin 1) for f = ± 22,5 kHz
limiting sensitivity, −3 dB	Vi	typ.	110	μV
Signal-to-noise ratio for Vi = 1 mV	S/N	typ.	65	dB
A.F. output voltage at Vi = 1 mV	Vo	typ.	100	mV
Total harmonic distortion at Vi = 1 mV	THD	typ.	0,3	%
AM suppression at Vi = 10 mV	AMS	typ.	50	dB

PACKAGE OUTLINE

16-lead DIL; plastic (SOT38); SOT38-1; 1996 July 25.

September 1987

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1987 September

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Fig.1 Block diagram.

radio AM/FM for circuit RF/IF

TEA5570

Semiconductors Philips

specification Product

Philips Semiconductors			Product specification
RF/IF circuit for AM/FM radio			TEA5570
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Supply voltage (pin 7)	VP = V7-16	max.	12	V
Voltage at pins 4, 5, 9 and 10 to pin 16 (ground)	Vn-16	max.	12	V
Voltage range at pin 8	V8-16		VP ± 0,5	V
Current into pin 5	I5	max.	3	mA
Total power dissipation	Ptot	see Fig.2
Storage temperature range	Tstg	−55 to	+ 150	°C
Operating ambient temperature range	Tamb	−30 to	+ 85	°C

Fig.2 Power derating curve.

September 1987

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Philips Semiconductors				Product specification
RF/IF circuit for AM/FM radio				TEA5570
D.C. CHARACTERISTICS
VP = 6 V; Tamb = 25 °C; measured in Fig.10; unless otherwise specified
PARAMETER	SYMBOL	MIN.	TYP.	MAX.	UNIT
Supply (pin 7)
Supply voltage (note 1)	VP = V7-16	2,4	5,4	9,0	V
Voltages
at pin 1 (FM)	V1-16	−	1,42	−	V
at pin 1; −I1 = 50 μA (FM)	V1-16	−	1,28	−	V
at pins 2 and 3 (AM)	V2,3-16	−	1,42	−	V
at pin 6	V6-16	−	0,7	−	V
at pin 11	V11-16	−	1,4	−	V
at pin 13	V13-16	−	0,7	−	V
at pin 14	V14-16	−	4,3	−	V
Currents
Supply current	I7	4,2	6,2	8,2	mA
Current supplied from pin 1 (FM)	−I1	−	−	50	μA
Current supplied from pin 12	−I12	−	−	20	μA
Current supplied from pin 15	−I15	−	30	−	μA
Current into pin 4 (AM)	I4	−	0,6	−	mA
Current into pin 5 (FM) (note 4)	I5	−	0,35	−	mA
Current into pin 8 (AM)	I8	−	0,3	−	mA
Current into pins 9, 10 (FM)	I9,10	−	0,65	−	mA
Current into pin 14	I14	−	0,4	−	mA
Power consumption	P	−	40	−	mW

September 1987

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Philips Semiconductors	Product specification
RF/IF circuit for AM/FM radio	TEA5570

A.C. CHARACTERISTICS

AM performance

VP = 6 V; Tamb = 25 °C; r.f. condition: fi = 1 MHz, m = 0,3, fm = 1 kHz; transfer impedance of the i.f. filter |Ztr| = v6/I4 = 2,7 kΩ; measured in Fig.10; unless otherwise specified

PARAMETER		SYMBOL	MIN.	TYP.	MAX.	UNIT
R.F. sensitivity (pin 2)
at Vo = 30 mV		Vi	3,5	5,0	7,0	μV
at S + N/N = 6 dB		Vi	−	1,3		μV
at S + N/N = 26 dB		Vi	−	16	20	μV
at S + N/N = 50 dB		Vi	−	1	−	mV
Signal handling (THD ≤ 10% at m = 0,8)		Vi	200	−	−	mV
A.F. output voltage at Vi = 1 mV		Vo	80	100	125	mV
Total harmonic distortion
at Vi = 100 μV to 100 mV (m = 0,3)		THD	−	0,5	−	%
at Vi = 2 mV (m = 0,8)		THD	−	1,0	2,5	%
at Vi = 200 mV (m = 0,8)		THD	−	4,0	10	%
I.F. suppression at Vo = 30 mV (note 2)		α	26	35	−	dB
Oscillator voltage (pin 8; note 3)
at fosc = 1455 kHz		V8-16	120	160	200	mV
Indicator current (pin 12) at Vi = 1 mV		I12	−	200	230	μV
FM performance
VP = 6 V; Tamb = 25 °C; i.f. condition: fi = 10,7 MHz,	f = ± 22,5 kHz, fm = 1 kHz; transfer impedance of the i.f. filter
|Ztr| = v6/i5 = 275 Ω; measured in Fig.10; unless otherwise specified
PARAMETER		SYMBOL	MIN.	TYP.	MAX.	UNIT
I.F. part
I.F. sensitivity (adjustable; note 4)
Input voltage
at −3 dB before limiting		Vi	90	110	130	μV
at S + N/N = 26 dB		Vi	−	6	−	μV
at S + N/N = 65 dB		Vi	−	1	−	mV
A.F. output voltage at Vi = 1 mV		Vo	80	100	125	mV
Total harmonic distortion at Vi = 1 mV		THD	−	0,3	−	%
AM suppression (note 5)		AMS	−	50	−	dB

September 1987

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