Philips TDA1300TT, TDA1300T Datasheet

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INTEGRATED CIRCUITS

DATA SHEET

TDA1300T; TDA1300TT

Photodetector amplifiers and laser supplies

Preliminary specification

1997 Jul 15

Supersedes data of 1995 Nov 16

File under Integrated Circuits, IC01

Philips Semiconductors

Preliminary specification

 

 

Photodetector amplifiers and laser

TDA1300T; TDA1300TT

supplies

FEATURES

Six input buffer amplifiers with low-pass filtering with virtually no offset

HF data amplifier with a high or low gain mode

Two built-in equalizers for single or double speed mode ensuring high playability in both modes

Full automatic laser control including stabilization and

an on/off switch and containing a separate supply VDDL for power reduction

Applicable with N-sub laser with N-sub or P-sub monitor diode

Adjustable laser bandwidth and laser switch-on current slope

Protection circuit preventing laser damage due to supply voltage dip

Optimized interconnect between pick-up detector and TDA1301

Wide supply voltage range

Wide temperature range

Low power consumption.

QUICK REFERENCE DATA

GENERAL DESCRIPTION

The TDA1300 is an integrated data amplifier and laser supply for three beam pick-up detectors applied in a wide range of mechanisms for Compact Disc (CD) and read only optical systems. It offers 6 amplifiers which amplify and filter the focus and radial diode signals adequately and provides an equalized RF signal for single or double speed mode which can be switched by means of the speed control pin.

The device can handle astigmatic, single Foucault and double Foucault detectors and is applicable with all N-sub lasers and N-sub or P-sub monitor diode units.

After a single initial adjustment the circuit keeps control over the laser diode current resulting in a constant light output power independent of ageing. The chip is mounted in a small SO24 or TSSOP24 package enabling mounting close to the laser pick-up unit on the sledge.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

VDD

supply voltage

 

 

3

5.5

V

Diode current amplifiers (n = 1 to 6)

 

 

 

 

 

 

 

 

 

 

 

 

 

Gd(n)

diode current gain

 

1.43

1.55

1.67

 

IO(d)

diode offset current

 

100

nA

B

3 dB bandwidth

Ii(d) = 1.67 μA

50

kHz

RFE amplifier (built-in equalizer)

 

 

 

 

 

 

 

 

 

 

 

 

 

td(eq)

equalization delay

fi = 0.3 MHz

320

ns

td(f)

flatness delay

 

double speed

5

ns

Laser supply

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Io(L)

output current

 

VDDL = 3 V

100

mA

ORDERING INFORMATION

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TYPE

 

 

PACKAGE

 

 

 

 

 

 

 

 

 

 

 

NUMBER

NAME

 

DESCRIPTION

 

 

VERSION

 

 

 

 

 

 

 

 

 

TDA1300T

SO24

plastic small outline package; 24 leads; body width 7.5 mm

 

SOT137-1

 

 

 

 

TDA1300TT

TSSOP24

plastic thin shrink small outline package; 24 leads; body width 4.4 mm

SOT355-1

 

 

 

 

 

 

 

 

1997 Jul 15

2

Philips TDA1300TT, TDA1300T Datasheet

Philips Semiconductors

Preliminary specification

 

 

Photodetector amplifiers and laser

TDA1300T; TDA1300TT

supplies

BLOCK DIAGRAM

I6

23

I6in

6

1.5x

Id6out

2

O6

 

 

 

 

I5

20

I5in

5

1.5x

Id5out

5

O5

 

 

 

 

I4

24

I4in

4

1.5x

Id4out

1

O4

 

 

 

 

I3

22

I3in

3

1.5x

Id3out

3

O3

 

 

 

 

I2

19

I2in

2

1.5x

Id2out

6

O2

 

 

 

 

I1

21

I1in

1

1.5x

Id1out

4

O1

 

 

 

 

 

 

 

 

95, 120, 134 or

TDA1300T

 

 

 

 

 

 

 

 

 

 

 

 

 

240 kΩ

 

 

 

 

 

 

Ii(central)

−4

 

 

 

 

 

 

 

I/V

 

 

 

HG

11

 

 

 

 

9

 

 

 

 

 

 

RFE

 

12

 

 

 

 

 

LS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

RF

 

 

 

 

 

 

 

ADJ

14

VDD

(N-sub) or

Vgap

 

 

 

 

IADJ

(P-sub)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

8

VDDL

 

 

 

 

 

 

 

MI

17

Vmon

(N-sub) or

OTA

ILO

16

LO

 

Imon

(P-sub)

 

 

 

 

 

 

 

 

 

 

VDD

18

 

 

 

 

7

 

 

 

SUPPLY

 

ON/OFF

LDON

 

15

 

 

 

GND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

13

 

 

 

 

 

 

 

CL

 

MBG474

 

 

 

 

 

 

 

 

Fig.1 Block diagram.

1997 Jul 15

3

Philips Semiconductors

Preliminary specification

 

 

Photodetector amplifiers and laser

TDA1300T; TDA1300TT

supplies

PINNING

SYMBOL

PIN

DESCRIPTION

 

 

 

 

 

 

 

O4

1

current amplifier 4 output

 

 

 

 

 

 

 

O6

2

current amplifier 6 output

 

 

 

 

 

 

 

O3

3

current amplifier 3 output

 

 

 

 

 

 

 

O1

4

current amplifier 1 output

 

 

 

 

 

 

handbook, halfpage

O5

5

current amplifier 5 output

 

 

 

 

 

 

 

O2

6

current amplifier 2 output

 

 

 

 

 

 

 

LDON

7

control pin for switching the laser on

 

 

 

 

and off

 

 

 

 

 

 

 

VDDL

8

laser supply voltage

 

 

RFE

9

equalized output voltage of sum signal

 

 

 

 

of amplifiers 1 to 4

 

 

 

 

 

 

 

RF

10

unequalized output

 

 

 

 

 

 

 

HG

11

control pin for gain switch

 

 

 

 

 

 

 

LS

12

control pin for speed switch

 

 

 

 

 

 

 

CL

13

external capacitor

 

 

 

 

 

 

 

ADJ

14

P-sub monitor (if connected via

 

 

 

 

resistor to GND);

 

 

 

 

N-sub monitor (if connected to VDD)

 

 

GND

15

ground (substrate connection)

 

 

 

 

 

 

 

LO

16

laser output; current output

 

 

 

 

 

 

 

MI

17

monitor diode input (laser)

 

 

 

 

 

 

 

VDD

18

supply

 

 

I2

19

photo detector input 2 (central)

 

 

 

 

 

 

 

I5

20

photo detector input 5 (satellite)

 

 

 

 

 

 

 

I1

21

photo detector input 1 (central)

 

 

 

 

 

 

 

I3

22

photo detector input 3 (central)

 

 

 

 

 

 

 

I6

23

photo detector input 6 (satellite)

 

 

 

 

 

 

 

I4

24

photo detector input 4 (central)

 

 

 

 

 

 

 

 

 

 

 

 

O4

1

 

24

I4

 

 

 

 

 

O6

2

 

23

I6

 

 

 

 

 

O3

3

 

22

I3

 

 

 

 

 

O1

4

 

21

I1

 

 

 

 

 

O5

5

 

20

I5

 

 

 

 

 

O2

6

TDA1300T

19

I2

 

 

 

 

LDON

7

 

18

VDD

 

 

 

 

VDDL

8

 

17

MI

 

 

 

 

RFE

9

 

16

LO

 

 

 

 

 

RF

10

 

15

GND

 

 

 

 

 

HG

11

 

14

ADJ

 

 

 

 

 

LS

12

 

13

CL

 

 

 

 

 

 

 

MBG472

 

Fig.2 Pin configuration.

1997 Jul 15

4

Philips Semiconductors

Preliminary specification

 

 

Photodetector amplifiers and laser

TDA1300T; TDA1300TT

supplies

FUNCTIONAL DESCRIPTION

The TDA1300T; TDA1300TT can be divided into two main sections:

Laser control circuit section

Photo diode signal filter and amplification section.

Laser control circuit section

The main function of the laser control circuit is to control the laser diode current in order to achieve a constant light output power. This is done by monitoring the monitor diode. There is a fixed relation between light output power of the laser and the current of the monitor diode. The circuit can handle P-sub or N-sub monitor diodes.

N-sub MONITOR

In this event pin 14 (ADJ) must be connected to the positive supply voltage VDD to select the N-sub mode. With an adjustable resistor (RADJn) across the diode the monitor current can be adjusted (and so the laser light output power) if one knows that the control circuit keeps the monitor voltage Vmon at a constant level of approximately 150 mV.

P-sub MONITOR

In this event pin 14 (ADJ) is connected via resistor RADJp to ground. The P-sub mode is selected and pin 14 (ADJ)

acts as reference band gap voltage, providing together

with RADJp an adjustable current lADJ. Now the control circuit keeps the monitor current at a level which is 10lADJ.

The circuit is built up in three parts:

The first part is the input stage which is able to switch between both modes (N-sub or P-sub).

The second part is the integrator part which makes use

of an external capacitor CL. This capacitor has two different functions:

During switch-on of the laser current, it provides a current slope of typically:

Io(L) 106

------------- ----------- (A/s) t CL

– After switch-on it ensures that the bandwidth equals

BP

 

K × Gext

× 90×109

-------------------------------------------------CL

 

(Hz)

 

 

× Imon

in case of P-sub monitor or

RADJn × × × 9

BN ----------------K Gext 870 10 (Hz) CL

in case of N-sub monitor, where

Gext represents the AC gain of an extra loop amplifier, if applied, and K = Imon/ IL which is determined by the laser/monitor unit. Imon is the average current (pin 17) at typical light emission power of the laser diode.

The third part is the power output stage, its input being the integrator output signal. This stage has a separate

supply voltage (VDDL), thereby offering the possibility of reduced power consumption by supplying this pin with the minimum voltage necessary.

It also has a laser diode protection circuit which comes into action just before the driving output transistor will get saturated due to a large voltage dip on VDDL. Saturation will result in a lower current of the laser diode, which normally is followed immediately by an increment of the voltage of the external capacitor CL. This could cause damage to the laser diode at the end of the dip.

The protection circuit prevents an increment of the capacitor voltage and thus offers full protection to the laser diode under these circumstances.

Photo diode signal filter and amplification section

This section has 6 identical current amplifiers. Amplifiers 1 to 4 are designed to amplify the focus photo diode signals. Each amplifier has two outputs: an

LF output and an internal RF output. Amplifiers 5 and 6 are used for the radial photo diode currents and only have an LF output. All 6 output signals are low-pass filtered with a corner frequency at 69 kHz. The internal RF output signals are summed together and converted to a voltage afterwards by means of a selectable transresistance.

This transresistance RRF can be changed between 140 kΩ (3.3 V application) or 240 kΩ (5 V application) in combination with the P-sub monitor. In the event of the N-sub monitor selection, RRF can be changed between 70 kΩ (3.3 V application) and 120 kΩ (5 V application). The RF signal is available directly at pin 10 but there is also an unfiltered signal available at pin 9.

The used equalization filter has 2 different filter curves:

One for single-speed mode

One for double-speed mode.

1997 Jul 15

5

Philips Semiconductors

Preliminary specification

 

 

Photodetector amplifiers and laser

TDA1300T; TDA1300TT

supplies

Table 1 Gain and monitor modes

 

PIN

MONITOR MODE

 

RRF (kΩ)

 

INTENDED APPLICATION AREA

 

 

 

 

 

HG

 

ADJ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

RADJp connected

P-sub

 

140

 

 

 

 

 

 

to ground

 

 

 

 

3.3 V

 

 

0

 

1

N-sub

 

70

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1(1)

 

RADJp connected

P-sub

 

240

 

 

 

 

 

 

to ground

 

 

 

 

5 V

 

 

1(1)

 

1

N-sub

 

120

 

 

 

 

Note

 

 

 

 

 

 

 

 

 

1. Logic 1 or not connected.

 

 

 

 

 

 

 

Table 2 Speed and laser modes; note 1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODE

 

 

PIN

 

DEFAULT

 

 

 

 

 

 

 

 

SPEED

 

 

 

LASER

 

VALUE(2)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SINGLE

 

DOUBLE

 

on

 

off

 

 

 

 

 

 

 

 

 

 

LS

 

1

1

 

0

 

X(3)

 

X(3)

LDON

 

1

X(3)

 

X(3)

 

1

 

0

Notes

1.1 = HIGH voltage (VDD); 0 = LOW voltage (GND); X = don’t care.

2.If not connected.

3.X = don’t care.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

VDD

supply voltage

 

8

V

Pmax

maximum power dissipation

 

300

mW

Tstg

storage temperature

 

65

+150

°C

Tamb

operating ambient temperature

 

 

 

 

 

TDA1300T

 

40

+85

°C

 

TDA1300TT

 

40

+70

°C

 

 

 

 

 

 

V (1)

electrostatic handling pin 16

note 2

2

+2

kV

es

 

 

 

 

 

 

electrostatic handling (all other pins)

 

3

+3

kV

 

 

 

 

 

 

Notes

1.Classification A: human body model; C = 100 pF; R = 1500 Ω; Ves = ±2000 V. Charge device model: C = 200 pF; L = 2.5 μH; R = 0 Ω; Ves = 250 V.

2.Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.

1997 Jul 15

6

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