Philips TDA8357J Datasheet

5 (2)

INTEGRATED CIRCUITS

DATA SHEET

TDA8357J

Full bridge vertical deflection output circuit in LVDMOS

Preliminary specification

 

1999 Nov 10

File under Integrated Circuits, IC02

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Philips Semiconductors

Preliminary specification

 

 

Full bridge vertical deflection output circuit

TDA8357J

in LVDMOS

FEATURES

Few external components required

High efficiency fully DC coupled vertical bridge output circuit

Vertical flyback switch with short rise and fall times

Built-in guard circuit

Thermal protection circuit

Improved EMC performance due to differential inputs.

QUICK REFERENCE DATA

GENERAL DESCRIPTION

The TDA8357J is a power circuit for use in 90° and 110° colour deflection systems for 25 to 200 Hz field frequencies, and for 4 : 3 and 16 : 9 picture tubes. The IC contains a vertical deflection output circuit, operating as a high efficiency class G system. The full bridge output circuit allows DC coupling of the deflection coil in combination with single positive supply voltages.

The IC is constructed in a Low Voltage DMOS (LVDMOS) process that combines bipolar, CMOS and DMOS devices. DMOS transistors are used in the output stage because of absence of second breakdown.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

Supplies

 

 

 

 

 

 

 

 

 

 

 

 

 

VP

supply voltage

 

7.5

12

18

V

VFB

flyback supply voltage

 

2VP

45

66

V

Iq(P)(av)

average quiescent supply current

during scan

10

15

mA

Iq(FB)(av)

average quiescent flyback supply current

during scan

10

mA

Ptot

total power dissipation

 

8

W

Inputs and outputs

 

 

 

 

 

 

 

 

 

 

 

 

Vi(dif)(p-p)

differential input voltage (peak-to-peak value)

 

1000

1500

mV

Io(p-p)

output current (peak-to-peak value)

 

2.0

A

Flyback switch

 

 

 

 

 

 

 

 

 

 

 

 

 

Io(peak)

maximum (peak) output current

t 1.5 ms

±1.2

A

Thermal data; in accordance with IEC 747-1

 

 

 

 

 

 

 

 

 

 

 

 

Tstg

storage temperature

 

55

+150

°C

Tamb

ambient temperature

 

25

+75

°C

Tj

junction temperature

 

150

°C

ORDERING INFORMATION

TYPE

 

PACKAGE

 

 

 

 

NUMBER

NAME

DESCRIPTION

VERSION

 

 

 

 

 

TDA8357J

DBS9P

plastic DIL-bent-SIL power package; 9 leads (lead length

SOT523-1

 

 

12/11 mm); exposed die pad

 

 

 

 

 

1999 Nov 10

2

Philips TDA8357J Datasheet

Philips Semiconductors

Preliminary specification

 

 

Full bridge vertical deflection output circuit

TDA8357J

in LVDMOS

BLOCK DIAGRAM

Vi(p-p)

VI(bias)

0

Vi(p-p)

VI(bias)

0

 

GUARD

VP

VFB

 

 

 

8

3

6

 

 

 

GUARD

 

M5

 

 

 

CIRCUIT

 

D2

 

 

 

 

 

 

 

 

 

D3

 

 

 

 

M2

 

 

 

 

 

D1

 

7

OUTA

INA

1

 

 

 

 

 

 

 

 

M4

 

 

 

 

INPUT

 

 

9

FEEDB

 

AND

 

 

 

 

 

 

 

 

 

FEEDBACK

 

 

 

 

 

CIRCUIT

 

 

 

 

INB

2

M1

 

 

 

 

 

 

 

4

OUTB

 

 

M3

 

 

 

 

 

 

TDA8357J

 

 

 

5

 

 

 

 

 

 

 

MGS803

 

 

 

GND

 

 

 

Fig.1 Block diagram.

PINNING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PIN

DESCRIPTION

 

handbook, halfpage

 

 

 

 

 

 

 

INA

1

 

 

INA

1

input A

 

INB

 

 

 

 

 

 

 

 

 

 

 

2

 

 

INB

2

input B

 

 

 

VP

 

 

 

 

 

 

 

3

 

 

VP

3

supply voltage

 

 

 

OUTB

 

 

 

 

 

 

 

4

 

 

OUTB

4

output B

TDA8357J

 

 

GND

 

 

 

 

 

 

 

 

GND

5

ground

 

5

 

 

 

 

 

 

 

 

 

VFB

6

flyback supply voltage

 

VFB

 

 

 

 

6

 

 

 

 

 

 

 

 

 

 

OUTA

7

output A

 

OUTA

 

 

 

 

7

 

 

GUARD

8

guard output

 

 

 

 

 

 

GUARD

8

 

 

 

 

 

 

 

 

FEEDB

9

feedback input

 

FEEDB

 

 

 

 

 

 

 

 

 

 

 

9

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MGS804

 

 

 

 

The exposed die pad is connected to pin GND.

 

 

 

 

Fig.2

Pin configuration.

 

 

 

 

 

 

 

 

1999 Nov 10

3

Philips Semiconductors

Preliminary specification

 

 

Full bridge vertical deflection output circuit

TDA8357J

in LVDMOS

FUNCTIONAL DESCRIPTION

Vertical output stage

The vertical driver circuit has a bridge configuration. The deflection coil is connected between the complimentary driven output amplifiers. The differential

input circuit is voltage driven. The input circuit is specially designed for direct connection to driver circuits delivering a differential signal but it is also suitable for single-ended applications. The output currents of the driver device are converted to voltages by the conversion resistors

RCV1 and RCV2 (see Fig.3) connected to pins INA

and INB. The differential input voltage is compared with the voltage across the measuring resistor RM, providing internal feedback information. The voltage across RM is proportional with the output current. The relationship between the differential input current and the output current is defined by:

2 × Ii(dif)(p-p) × RCV = Io(p-p) × RM

The output current should measure 0.5 to 2.0 A (p-p) and is determined by the value of RM and RCV. The allowable input voltage range is 100 mV to 1.6 V for each input. The formula given does not include internal bondwire resistances. Depending on the values of RM and the internal bondwire resistance (typical value of 50 mΩ) the actual value of the current in the deflection coil will be about 5% lower than calculated.

Flyback supply

The flyback voltage is determined by the flyback supply voltage VFB. The principle of two supply voltages (class G) allows to use an optimum supply voltage VP for scan and an optimum flyback supply voltage VFB for flyback, thus very high efficiency is achieved. The available flyback output voltage across the coil is almost equal to VFB, due to the absence of a coupling capacitor which is not required in a bridge configuration. The very short rise and fall times of the flyback switch are determined mainly by the slew-rate value of more than 300 V/μs.

Protection

The output circuit contains protection circuits for:

Too high die temperature

Overvoltage of output A.

Guard circuit

A guard circuit with output pin GUARD is provided.

The guard circuit generates a HIGH-level during the flyback period. The guard circuit is also activated for one of the following conditions:

During thermal protection (Tj 170 °C)

During an open-loop condition.

The guard signal can be used for blanking the picture tube and signalling fault conditions. The vertical synchronization pulses of the guard signal can be used by an On Screen Display (OSD) microcontroller.

Damping resistor compensation

HF loop stability is achieved by connecting a damping resistor RD1 across the deflection coil. The current values in RD1 during scan and flyback are significantly different. Both the resistor current and the deflection coil current flow into measuring resistor RM, resulting in a too low deflection coil current at the start of the scan.

The difference in the damping resistor current values during scan and flyback have to be externally compensated in order to achieve a short settling time. For that purpose a compensation resistor RCMP in series with a zener diode is connected between pins OUTA and INA (see Fig.4). The zener diode voltage value should be equal to VP. The value of RCMP is calculated by:

(VFB Vloss(FB) VZ) × RD1 × RCV1

R = -----------------------------------------------------------------------------------------------------------

CMP (VFB Vloss(FB) Icoil(peak) × Rcoil) × RM

where:

Vloss(FB) is the voltage loss between pins VFB and OUTA at flyback

Rcoil is the deflection coil resistance

VZ is the voltage of zener diode D5.

1999 Nov 10

4

Philips Semiconductors

Preliminary specification

 

 

Full bridge vertical deflection output circuit

TDA8357J

in LVDMOS

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

VP

supply voltage

 

18

V

VFB

flyback supply voltage

 

68

V

Vn

DC voltage

 

 

 

 

 

pin OUTA

note 1

68

V

 

pin OUTB

 

VP

V

 

pins INA, INB, GUARD and FEEDB

 

0.5

VP

V

In

DC current

 

 

 

 

 

pins OUTA and OUTB

during scan (p-p)

2.0

A

 

pins OUTA and OUTB

at flyback (peak); t 1.5 ms

±1.2

A

 

pins INA, INB, GUARD and FEEDB

 

20

+20

mA

 

 

 

 

 

 

Ilu

latch-up current

current into any pin; pin voltage

+200

mA

 

 

is 1.5 × VP; note 2

 

 

 

 

 

current out of any pin; pin voltage

200

mA

 

 

is 1.5 × VP; note 2

 

 

 

Ves

electrostatic handling voltage

machine model; note 3

300

+300

V

 

 

human body model; note 4

2000

+2000

V

 

 

 

 

 

 

Ptot

total power dissipation

 

8

W

Tstg

storage temperature

 

55

+150

°C

Tamb

ambient temperature

 

25

+75

°C

Tj

junction temperature

note 5

150

°C

Notes

1.When the voltage at pin OUTA supersedes 70 V the circuit will limit the voltage.

2.At Tj(max).

3.Equivalent to 200 pF capacitance discharge through a 0 Ω resistor.

4.Equivalent to 100 pF capacitance discharge through a 1.5 kΩ resistor.

5.Internally limited by thermal protection at Tj 170 °C.

THERMAL CHARACTERISTICS

In accordance with IEC 747-1.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

Rth(j-c)

thermal resistance from junction to case

 

6

K/W

Rth(j-a)

thermal resistance from junction to ambient

in free air

65

K/W

1999 Nov 10

5

Loading...
+ 11 hidden pages