Philips TEA5710T, TEA5710 Datasheet

INTEGRATED CIRCUITS

TEA5710; TEA5710T

AM/FM radio receiver circuit

Product specification			March 1994
File under Integrated Circuits, IC01

Philips Semiconductors	Product specification
AM/FM radio receiver circuit	TEA5710; TEA5710T

FEATURES

∙Wide supply voltage range: 2.0 to 12 V

∙Low current consumption: 7.5 mA at AM, 9.0 mA at FM

∙High selectivity with distributed IF gain

∙LED driver for tuning indication

∙High input sensitivity: 1.6 mV/m (AM), 2.0 μV (FM) for 26 dB S/N

∙Good strong signal behaviour: 10 V/m at AM, 500 mV at FM

∙Low output distortion: 0.8% at AM, 0.3% at FM

∙Designed for simple and reliable PC-board layout

∙High impedance MOSFET input on AM

QUICK REFERENCE DATA

APPLICATIONS

∙Portable AM/FM radio

∙Clock radio

∙Personal headphone radio

DESCRIPTION

The TEA5710 is a high performance Bimos IC for use in AM/FM radios. All necessary functions are integrated: from AM and FM front-end to detector output stages.

Conditions AM: fi = 1 MHz; m = 0.3; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specified. Conditions FM: fi = 100 MHz; f = 22.5 kHz; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specified.

SYMBOL

PARAMETER

MIN.

TYP.

MAX.

UNIT

VP

positive supply voltage

2.0

−

12

V

IP

supply current

in AM mode

5.6

7.5

9.9

mA

in FM mode

7.3

9.0

11.2

mA

Tamb

operating ambient temperature range

−15

−

+60

°C

AM performance

Vin1

RF sensitivity

40

55

70

μV

V13

AF output voltage

36

45

70

mV

THD

total harmonic distortion

−

0.8

2.0

%

FM performance

Vin3

RF sensitivity

1.0

2.0

3.8

μV

V13

AF output voltage

47

58

69

mV

THD

total harmonic distortion

−

0.3

0.8

%

ORDERING INFORMATION

EXTENDED TYPE

PACKAGE

NUMBER

PINS

PIN POSITION

MATERIAL

CODE

TEA5710

24

SDIL

plastic

SOT234AG(1)

TEA5710T

24

SO24L

plastic

SOT137A(2)

Notes

1.SOT234-1; 1996 August 27.

2.SOT137-1; 1996 August 27.

March 1994

2

Philips Semiconductors	Product specification
AM/FM radio receiver circuit	TEA5710; TEA5710T

	FM-RFI	FM-RFO	FM-MIXER	FM-IF1I	FM-RF1O		FM-IF2I	FM-DEM
	1	20	4	6		8	10	12
24	FM		FM		FM		FM	FM
RFGND	FRONT-END		MIXER		IF 1		IF 2	DETECTOR
18
FM-OSC
16							FM		14	AM/FM
VP			FM		TEA5710			AM/FM
22			OSCILLATOR					SWITCH
					TEA5710T		AM
RIPPLE
5									21	AM-AGC/
VSTABA	STABILIZER									FM-AFC
9
VSTABB			AM				AGC	AM/FM	15	IND
11			OSCILLATOR					INDICATOR
IFGND
17
AM-OSC
23	AM		AM					AM	13	AF
AM-RFI						AM-IF
	FRONT-END		MIXER					DETECTOR
			3		2	7			19
			AM-MIXER	AM-IF1I		AM-IF2I/O		SUBGND		MGE106

Fig.1 Block diagram.

March 1994

3

Philips Semiconductors			Product specification
AM/FM radio receiver circuit			TEA5710; TEA5710T
PINNING
SYMBOL	PIN	DESCRIPTION
FM-RFI	1	FM-RF aerial input (input impedance typ. 50 Ω)
AM-IF1I	2	input from IFT or ceramic filter (input impedance typ. 3 kΩ)
AM-MIXER	3	open-collector output to IFT
FM-MIXER	4	output to ceramic IF filter (output impedance typ. 330 Ω)
VSTABA	5	stabilized internal supply voltage (A)
FM-IF1I	6	first FM-IF input (input impedance typ. 330 Ω)
AM-IF2I/O	7	input/output to IFT; output: current source
FM-IF1O	8	first FM-IF output (output impedance typ. 330 Ω)
VSTABB	9	stabilized internal supply voltage (B)
FM-IF2I	10	second FM-IF input (input impedance typ. 330 Ω)
IFGND	11	ground of IF and detector stages
FM-DEM	12	ceramic discriminator pin
AF	13	audio output (output impedance typ. 5 kΩ)
AM/FM	14	switch terminal: open for AM; ground for FM
IND	15	field-strength dependent indicator
VP	16	positive supply voltage
AM-OSC	17	parallel tuned AM-OSC circuit to ground
FM-OSC	18	parallel tuned FM-OSC circuit to ground
SUBGND	19	substrate and RF ground
FM-RFO	20	parallel tuned FM-RF circuit to ground
AM-AGC/FM-AFC	21	AGC/AFC capacitor pin
RIPPLE	22	ripple capacitor pin
AM-RFI	23	parallel tuned AM aerial circuit to ground (total input capacitance typ. 3 pF)
RFGND	24	FM-RF ground

March 1994

4

Philips Semiconductors	Product specification
AM/FM radio receiver circuit	TEA5710; TEA5710T

handbook, halfpage				RFGND	handbook, halfpage
FM-RFI	1		24		FM-RFI	1			24	RFGND
AM-IFI				AM-RFI	AM-IFI					AM-RFI
	2		23			2			23
AM-MIXER				RIPPLE	AM-MIXER					RIPPLE
	3		22			3			22
FM-MIXER				AM-AGC/FM-AFC	FM-MIXER					AM-AGC/FM-AFC
	4		21			4			21
VSTABA				FM-RFO	VSTABA					FM-RFO
	5		20			5			20
FM-IF1I				SUBGND	FM-IF1I					SUBGND
	6	TDA5710	19			6		TDA5710T	19
AM-IF2I/O				FM-OSC	AM-IF2I/O					FM-OSC
	7		18			7			18
FM-IF1O				AM-OSC	FM-IF1O					AM-OSC
	8		17			8			17
VSTABB				VP	VSTABB					VP
	9		16			9			16
FM-IF2I				IND						IND
	10		15		FM-IF2I	10			15
IFGND				AM/FM	IFGND					AM/FM
	11		14			11			14
FM-DEM				AF	FM-DEM					AF
	12		13			12			13
		MGE104						MGE105

Fig.2 Pin configuration TEA5710.

Fig.3 Pin configuration TEA5710T.

FUNCTIONAL DESCRIPTION

The TEA5710 incorporates internal stabilized power supplies. The maximum supply voltage is 12 V, the minimum voltage can go down temporarily to 1.8 V without any loss in performance.

The AM circuit incorporates a double balanced mixer, a one pin low-voltage oscillator (up to 30 MHz), a field-strength dependent indicator output and is designed for distributed selectivity.

The AM input is designed to be connected to the top of a tuned circuit. AGC controls the IF amplification and for large signals it lowers the input impedance.

The first AM selectivity can be an IFT as well as an IFT combined with a ceramic filter; the second one is an IFT.

The FM circuit incorporates a tuned RF stage, a double balanced mixer, a one-pin oscillator, a field-strength indicator output and is designed for distributed IF ceramic filters. The FM quadrature detector uses a ceramic resonator.

March 1994

5

Philips Semiconductors				Product specification
AM/FM radio receiver circuit			TEA5710; TEA5710T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL	PARAMETER	MIN.		MAX.	UNIT
VP	positive supply voltage	0		12	V
Tstg	storage temperature range	−55		+150	°C
Tamb	operating ambient temperature range	−15		+60	°C
Tj	junction temperature range	−15		+150	°C

THERMAL RESISTANCE

SYMBOL			PARAMETER			VALUE		UNIT
Rth j-a		from junction to ambient
		for SDIL version TEA5710				69		K/W
		for SO24L version TEA5710T				76		K/W
CIRCUIT DESIGN DATA
PIN NO.	PIN SYMBOL		DC PIN VOLTAGE (V)			EQUIVALENT CIRCUIT
			AM	FM

		−	220 Ω
1	FM-RFI		0.73
			1
			24
			20
			MGE114

				5
				3 kΩ
2	AM-IF1I	1.4	1.4	2
	input
				11

MGE115

March 1994

6

	Philips Semiconductors								Product specification
	AM/FM radio receiver circuit				TEA5710; TEA5710T
	PIN NO.	PIN SYMBOL	DC PIN VOLTAGE (V)		EQUIVALENT CIRCUIT
			AM	FM
					3
	3	AM-MIXER	1.4	1.4	5
		output
						MGE116

	4	FM-MIXER	−	1.0	4
		output

680 Ω

MGE117

				16
5	VSTABA	1.4	1.4	22
				5

MGE118

				5	120 Ω
		FM-IFI		6
	6		−	0.73	2.7
		input
					kΩ
				11	MGE119

March 1994

7

Philips Semiconductors

Product specification

AM/FM radio receiver circuit

TEA5710; TEA5710T

DC PIN VOLTAGE (V)

PIN NO.

PIN SYMBOL

EQUIVALENT CIRCUIT

AM

FM

9

AM-IF2I/O

7

7

1.4

1.4

input/output

11

MGE120

FM-IF1O

9

8

−

0.69

8

output

560 Ω

MGE121

					16
	9	VSTABB	1.4	1.4	22
					9
					MGE122
				9	180 Ω
		FM-IF2I		10
	10		−	0.73	2.2
		input
					kΩ
				11	MGE123
	11	IFGND	0	0

March 1994

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