Philips TDA5630T-C2, TDA5630M-C2, TDA5630M-C1, TDA5630AT-C1, TDA5630AM-C1 Datasheet

INTEGRATED CIRCUITS

TDA5630; TDA5631

9 V VHF, hyperband and UHF mixer/oscillator for TV and VCR 3-band tuners

Product specification			1996 Mar 21
File under Integrated Circuits, IC02

Philips Semiconductors	Product specification
9 V VHF, hyperband and UHF	TDA5630;
mixer/oscillator for TV and VCR 3-band tuners	TDA5631

FEATURES

∙Balanced mixer with a common emitter input for band A (single input)

∙2-pin oscillator for bands A and B

∙Balanced mixer with a common base input for bands B and C (balanced input)

∙3-pin oscillator for band C

∙Local oscillator buffer output for external synthesizer

∙SAW filter preamplifier with a low output impedance to drive the SAW filter directly

∙Band gap voltage stabilizer for oscillator stability

∙Electronic band switch.

APPLICATIONS

∙3-band all channel TV and VCR tuners

∙Any standard.

QUICK REFERENCE DATA

GENERAL DESCRIPTION

The TDA5630 and TDA5631 are monolithic integrated circuits that perform the mixer/oscillator functions for bands A, B and C in TV and VCR tuners. These low-power mixer/oscillators require a power supply of 9 V and are available in a very small package.

The devices give the designer the capability to design an economical and physically small 3-band tuner.

They are suitable for European standards, as illustrated in Fig.12, with the following RF bands: 48.25 to 168.25 MHz, 175.25 to 447.25 MHz and 455.25 to 855.25 MHz. With an appropriate tuned circuit, they are also suitable for NTSC all channel tuners (USA and Japan).

The tuner development time can be drastically reduced by using these devices.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
VP	supply voltage		−	9.0	−	V
IP	supply current		−	35	−	mA
fRF	frequency range	RF input; band A; note 1	45	−	180	MHz
		RF input; band B; note 1	160	−	470	MHz
		RF input; band C; note 1	430	−	860	MHz
Gv	voltage gain	band A	−	25	−	dB
		band B	−	36	−	dB
		band C	−	36	−	dB
NF	noise figure	band A	−	7.5	−	dB
		band B	−	8	−	dB
		band C	−	9	−	dB
Vo	output voltage to get 1% cross	band A	−	118	−	dBμV
	modulation in channel	band B	−	118	−	dBμV
		band C	−	118	−	dBμV

Note

1.The limits are related to the tank circuits used in Fig.12 and the intermediate frequency. Frequency bands may be adjusted by the choice of external components.

1996 Mar 21

2

Philips Semiconductors Product specification

9 V VHF, hyperband and UHF			TDA5630;
mixer/oscillator for TV and VCR 3-band tuners				TDA5631
ORDERING INFORMATION
TYPE		PACKAGE
NUMBER	NAME	DESCRIPTION		VERSION
TDA5630T	SO20	plastic small outline package; 20 leads; body width 7.5 mm		SOT163-1
TDA5630M	SSOP20	plastic shrink small outline package; 20 leads; body width 4.4 mm		SOT266-1
TDA5631T	SO20	plastic small outline package; 20 leads; body width 7.5 mm		SOT163-1
TDA5631M	SSOP20	plastic shrink small outline package; 20 leads; body width 4.4 mm		SOT266-1

BLOCK DIAGRAM

band A oscillator	band B oscillator	band C oscillator
tuned circuit	tuned circuit	tuned circuit

								GND	IF outputs
											MBH044
	20	18	16	14	19	17	15	13	12	11
	(1)	(3)	(5)	(7)	(2)	(4)	(6)	(8)	(9)	(10)
	BAND A		BAND B		BAND C			TDA5630	IF AMPLIFIER
OSCILLATOR			OSCILLATOR		OSCILLATOR			TDA5631
	MIXER		MIXER		MIXER				ELECTRONIC
									BAND
									SWITCH
									LOCAL
									OSCILLATOR
	BAND A		BAND B		BAND C				AMPLIFIER
	STAGE		STAGE		STAGE
								DC
								STABILIZER
(18)		(15)	(16)	(17)	(19)		(20)	(14)	(13)	(12)	(11)
3		6	5	4	2		1	7	8	9	10
RF GND	band A		band B		band C			VP	local oscillator		band switch
	input										input
			inputs		inputs				amplifier outputs

The numbers given in parenthesis represent the TDA5631.

Fig.1 Block diagram.

1996 Mar 21

3

Philips Semiconductors Product specification

9 V VHF, hyperband and UHF					TDA5630;
mixer/oscillator for TV and VCR 3-band tuners					TDA5631
PINNING
SYMBOL		PIN		DESCRIPTION
	TDA5630		TDA5631
CIN1	1		20	band C input 1
CIN2	2		19	band C input 2
RFGND	3		18	ground for RF inputs
BIN1	4		17	band B input 1
BIN2	5		16	band B input 2
AIN	6		15	band A input
VP	7		14	supply voltage
LOOUT1	8		13	local oscillator amplifier output 1
LOOUT2	9		12	local oscillator amplifier output 2
BS	10		11	band switch input
IFOUT1	11		10	IF amplifier output 1
IFOUT2	12		9	IF amplifier output 2
GND	13		8	ground (0 V)
BOSCOC	14		7	band B oscillator output collector
COSCOC1	15		6	band C oscillator output collector 1
BOSCIB	16		5	band B oscillator input base
COSCOC2	17		4	band C oscillator output collector 2
AOSCOC	18		3	band A oscillator output collector
COSCIB	19		2	band C oscillator input base
AOSCIB	20		1	band A oscillator input base

handbook, halfpage						handbook, halfpage
CIN1	1		20	AOSCIB		AOSCIB	1		20	CIN1
CIN2	2		19	COSCIB		COSCIB	2		19	CIN2
RFGND	3		18	AOSCOC		AOSCOC	3		18	RFGND
BIN1	4		17	COSCOC2		COSCOC2	4		17	BIN1
BIN2	5	TDA5630	16	BOSCIB		BOSCIB	5	TDA5631	16	BIN2
AIN	6		15	COSCOC1		COSCOC1	6		15	AIN
VP	7		14	BOSCOC		BOSCOC	7		14	VP
LOOUT1	8		13	GND		GND	8		13	LOOUT1
LOOUT2	9		12	IFOUT2		IFOUT2	9		12	LOOUT2
BS	10		11	IFOUT1		IFOUT1	10		11	BS
		MGD265						MGD266
Fig.2 Pin configuration (TDA5630).						Fig.3 Pin configuration (TDA5631).

1996 Mar 21

4

Philips Semiconductors Product specification

9 V VHF, hyperband and UHF					TDA5630;
mixer/oscillator for TV and VCR 3-band tuners					TDA5631
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL	PARAMETER	MIN.		MAX.		UNIT
VP	supply voltage	−0.3		+10.5		V
VSW	switching voltage	0		10.5		V
IO	output current of each pin referenced to ground	−		−10		mA
tsc	maximum short-circuit time (all pins)	−		10		s
Tstg	IC storage temperature	−55		+150		°C
Tamb	operating ambient temperature	−10		+80		°C
Tj	junction temperature	−		+150		°C
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	VALUE				UNIT
Rth j-a	thermal resistance from junction to ambient in free air
	SOT163-1	100				K/W
	SOT266-1	120				K/W

HANDLING

Human body model: the IC withstands 2000 V in accordance with the MIL-STD-883C category B (stress reference pins 3, 7 and 13 shorted together for the TDA5630; pins 18, 14 and 8 for the TDA5631).

Machine model: the IC withstands 200 V in accordance with the MIL-STD-883C (stress reference pins 3, 7 and 13 shorted together for the TDA5630; pins 18, 14 and 8 for the TDA5631).

1996 Mar 21

5

Philips Semiconductors Product specification

9 V VHF, hyperband and UHF					TDA5630;
mixer/oscillator for TV and VCR 3-band tuners						TDA5631
CHARACTERISTICS
VP = 9 V; Tamb = 25 °C; measured in circuit of Fig.12; unless otherwise specified.
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.		MAX.	UNIT
Supply
VP	supply voltage		8.1	9.0		9.9	V
IP	supply current		−	35		45	mA
VSW	switching voltage	band A	0	−		1.1	V
		band B	1.6	−		2.4	V
		band C	3.0	−		5.0	V
ISW	switching current	band A	−	−		2	μA
		band B	−	−		5	μA
		band C	−	−		10	μA
Band A mixer including IF amplifier
fRF	frequency range	note 1	45	−		180	MHz
Gv	voltage gain	fRF = 50 MHz; see Fig.4; note 2	22.5	25		27.5	dB
		fRF = 180 MHz; see Fig.4; note 2	22.5	25		27.5	dB
NF	noise figure	fRF = 50 MHz; see Figs 5 and 6	−	7.5		9	dB
		fRF = 180 MHz; see Figs 5 and 6	−	9		10	dB
Vo	output voltage causing 1%	fRF = 180 MHz; see Fig.7	115	118		−	dBμV
	cross modulation in channel
Vi	input voltage causing 10 kHz	fRF = 180 MHz; note 3	−	100		−	dBμV
	pulling in channel
gos	optimum source	fRF = 50 MHz	−	0.5		−	mS
	conductance for noise figure	fRF = 180 MHz	−	1.1		−	mS
gi	input conductance	fRF = 50 MHz; see Fig.13; note 4	−	0.26		−	mS
		fRF = 180 MHz; see Fig.13; note 4	−	0.35		−	mS
Ci	input capacitance	fRF = 50 to 180 MHz; see Fig.13; note 4	−	2		−	pF
Band A oscillator
fosc	frequency range	note 5	80	−		216	MHz
fshift	frequency shift	VP = 10%; note 6	−	−		200	kHz
fdrift	frequency drift	T = 25 °C with no compensation;	−	−		500	kHz
		NP0 capacitors; note 7
		5 s to 15 min after switch on; with no	−	−		200	kHz
		compensation; NP0 capacitors; note 8

1996 Mar 21

6

Philips Semiconductors Product specification

9 V VHF, hyperband and UHF					TDA5630;
mixer/oscillator for TV and VCR 3-band tuners						TDA5631
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.		MAX.	UNIT
Band B mixer including IF amplifier; measurements using hybrid; note 9
fRF	frequency range	note 1	160	−		470	MHz
Gv	voltage gain	fRF = 170 MHz; see Fig.8; note 2	33	36		39	dB
		fRF = 470 MHz; see Fig.8; note 2	33	36		39	dB
NF	noise figure (not corrected	fRF = 170 MHz; see Fig.9	−	8		10	dB
	for image)	fRF = 470 MHz; see Fig.9	−	8		10	dB
Vo	output voltage causing 1%	fRF = 170 MHz; see Fig.10	115	118		−	dBμV
	cross modulation in channel	fRF = 470 MHz; see Fig.10	115	118		−	dBμV
Vi	input voltage causing 10 kHz	fRF = 470 MHz; TDA5630T and	−	91		−	dBμV
	pulling in channel	TDA5631T; note 3
		fRF = 470 MHz; TDA5630M and	−	83		−	dBμV
		TDA5631M; note 3
	input voltage causing	fRF = 430 MHz; TDA5630T and	−	81		−	dBμV
	N + 5 − 1 MHz pulling	TDA5631T; see Fig.11
		fRF = 430 MHz; TDA5630M and	−	66		−	dBμV
		TDA5631M; see Fig.11
Zi	input impedance (RS + jLSω)	RS; see Fig.14; note 4	−	30		−	Ω
		LS; see Fig.14; note 4	−	8		−	nH
Band B oscillator
fOSC	frequency range	note 5	200	−		500	MHz
fshift	frequency shift	VP = 10%; note 6	−	−		400	kHz
fdrift	frequency drift	T = 25 °C with no compensation:	−	−		2	MHz
		NP0 capacitors; note 7
		5 s to 15 min after switch on; with no	−	−		300	kHz
		compensation: NP0 capacitors; note 8
Band C mixer including IF amplifier; measurements using hybrid; note 9
fRF	frequency range	note 1	430	−		860	MHz
Gv	voltage gain	fRF = 430 MHz; see Fig.8; note 2	33	36		39	dB
		fRF = 860 MHz; see Fig.8; note 2	33	36		39	dB
NF	noise figure (not corrected	fRF = 430 MHz; see Fig.9	−	9		11	dB
	for image)	fRF = 860 MHz; see Fig.9	−	9		11	dB
Vo	output voltage causing 1%	fRF = 430 MHz; see Fig.10	115	118		−	dBμV
	cross modulation in channel	fRF = 860 MHz; see Fig.10	115	118		−	dBμV
Vi	input voltage causing 10 kHz	fRF = 860 MHz; TDA5630T and	−	87		−	dBμV
	pulling in channel	TDA5631T; note 3
		fRF = 860 MHz; TDA5630M and	−	93		−	dBμV
		TDA5631M; note 3
	input voltage causing	fRF = 820 MHz; see Fig.11	−	61		−	dBμV
	N + 5 − 1 MHz pulling

1996 Mar 21

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Philips Semiconductors Product specification

9 V VHF, hyperband and UHF						TDA5630;
mixer/oscillator for TV and VCR 3-band tuners							TDA5631
SYMBOL		PARAMETER	CONDITIONS	MIN.	TYP.		MAX.	UNIT
Zi		input impedance (RS + jLSω)	RS at fRF = 430 MHz; see Fig.15; note 4	−	40		−	Ω
			RS at fRF = 860 MHz; see Fig.15; note 4	−	53		−	Ω
			LS at fRF = 430 to 860 MHz; see Fig.15;	−	9		−	nH
			note 4
Band C oscillator
fOSC		frequency range	note 5	470	−		900	MHz
fshift		frequency shift	VP = 10%; note 6	−	−		400	kHz
fdrift		frequency drift	T = 25 °C with no compensation;	−	−		2.5	MHz
			NP0 capacitors; note 7
			5 s to 15 min after switch on; with no	−	−		600	kHz
			compensation; NP0 capacitors; note 8
IF amplifier
S22		output reflection coefficient	magnitude; see Fig.16; note 4	−	−10		−	dB
			phase; see Fig.16; note 4	−	9		−	o
Zo		output impedance	RS; see Fig.16; note 4	−	95		−	Ω
		(RS + jLSω)
			LS; see Fig.16; note 4	−	45		−	nH
LO output; RL = 100 Ω
Yo		output admittance	fosc = 80 MHz; see Fig.17; note 4	−	2.5		−	mS
		(GP + jCPω)		−	0.9		−	pF
			fosc = 900 MHz; see Fig.17; note 4	−	3.5		−	mS
				−	0.7		−	pF
Vo		output voltage	RL = 100 Ω	83	91		100	dBμV
SRF		spurious signal on LO output	note 10	−	−		−10	dBc
		with respect to LO output
		signal
SHD		LO signal harmonics with		−	−		−10	dBc
		respect to LO signal

1996 Mar 21

8

Philips Semiconductors	Product specification
9 V VHF, hyperband and UHF	TDA5630;
mixer/oscillator for TV and VCR 3-band tuners	TDA5631

Notes to the characteristics

1.The RF frequency range is defined by the oscillator frequency range and the intermediate frequency.

2.The gain is defined as the transducer gain (measured in Fig.12) plus the voltage transformation ratio of L6 to L7 (10 : 2, 15.4 dB including transformer loss).

3.The input level causing 10 kHz frequency detuning at the LO output. fosc = fRF + 33.4 MHz.

4.All S-parameters are referred to a 50 Ω system.

5.Limits are related to the tank circuits used in Fig.12. Frequency bands may be adjusted by the choice of external components.

6.The frequency shift is defined for a variation of power supply, first from VP = 9 to 8.1 V, then from VP = 9 to 9.9 V. In both cases, the frequency shift is below the specified value.

7.The frequency drift is defined for a variation of ambient temperature, first from Tamb = 25 °C to Tamb = 0 °C, then from Tamb = 25 °C to Tamb = 50 °C. In both cases, the frequency drift is below the specified value with NP0 capacitors. Capacitor types C1 to C11, as specified in Fig.12 for non-PLL applications, must be changed to series with other temperature coefficients (e.g. N330, N750 etc.).

8.Switch on drift is the change of oscillator frequency between 5s and 15 min after switch on.

9.The values have been corrected for hybrid and cable losses. The symmetrical output impedance of the hybrid is 100 Ω.

10.Measured with RF input voltage:

a)RF voltage = 120 dBμV at fRF < 180 MHz.

b)RF voltage = 107.5 dBμV at 180 MHz < fRF < 225 MHz.

c)RF voltage = 97 dBμV at 225 MHz < fRF < 860 MHz.

1996 Mar 21

9