Philips Semiconductors Product specification
Rectifier diodes |
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PBYR1545CT, PBYR1545CTB series |
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Schottky barrier |
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FEATURES |
SYMBOL |
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QUICK REFERENCE DATA |
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• Low forward volt drop |
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VR = 40 V/ 45 V |
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• Fast switching |
a1 |
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a2 |
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IO(AV) = 15 A |
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• Reverse surge capability |
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1 |
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3 |
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• High thermal cycling performance |
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VF ≤ 0.57 V |
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• Low thermal resistance |
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k |
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2 |
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GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR1545CT series is supplied in the SOT78 conventional leaded package.
The PBYR1545CTB series is supplied in the SOT404 surface mounting package.
PINNING |
SOT78 (TO220AB) |
SOT404 |
PIN DESCRIPTION
tab
1anode 1 (a)
2cathode (k) 1
3anode 2 (a)
tab |
cathode (k) |
1 2 3 |
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tab |
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2 |
1 |
3 |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
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UNIT |
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PBYR15 |
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40CT |
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45CT |
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PBYR15 |
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40CTB |
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45CTB |
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VRRM |
Peak repetitive reverse |
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40 |
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45 |
V |
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voltage |
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VRWM |
Working peak reverse |
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40 |
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45 |
V |
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voltage |
Tmb ≤ 107 ˚C |
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VR |
Continuous reverse voltage |
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40 |
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45 |
V |
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IO(AV) |
Average rectified forward |
square wave; δ = 0.5; |
- |
15 |
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A |
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current (both diodes |
Tmb ≤ 128 ˚C |
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IFRM |
conducting) |
square wave; δ = 0.5; |
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Repetitive peak forward |
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15 |
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A |
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current (per diode) |
Tmb ≤ 128 ˚C |
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IFSM |
Non-repetitive peak forward |
t = 10 ms |
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135 |
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A |
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current per diode |
t = 8.3 ms |
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150 |
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A |
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sinusoidal; Tj = 125 ˚C prior to |
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IRRM |
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surge; with reapplied VRRM(max) |
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Peak repetitive reverse |
pulse width and repetition rate |
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1 |
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A |
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surge current per diode |
limited by Tj max |
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Tj |
Operating junction |
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150 |
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˚C |
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temperature |
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Tstg |
Storage temperature |
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- 65 |
175 |
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˚C |
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1. It is not possible to make connection to pin 2 of the SOT404 package.
October 1998 |
1 |
Rev 1.300 |
Philips Semiconductors Product specification
Rectifier diodes |
PBYR1545CT, PBYR1545CTB series |
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Schottky barrier |
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THERMAL RESISTANCES |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Rth j-mb |
Thermal resistance junction |
per diode |
- |
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3 |
K/W |
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to mounting base |
both diodes |
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- |
2 |
K/W |
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Rth j-a |
Thermal resistance junction |
SOT78 package in free air |
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60 |
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K/W |
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to ambient |
SOT404 package, pcb mounted, minimum |
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50 |
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K/W |
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footprint, FR4 board |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 ˚C unless otherwise specified |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
Forward voltage per diode |
IF = 7.5 A; Tj = 125˚C |
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0.44 |
0.57 |
V |
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IF = 15 A; Tj = 125˚C |
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0.63 |
0.72 |
V |
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IF = 15 A |
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0.62 |
0.84 |
V |
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IR |
Reverse current per diode |
VR = VRWM |
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0.22 |
1 |
mA |
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Cd |
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VR = VRWM; Tj = 100˚C |
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18 |
25 |
mA |
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Junction capacitance per |
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C |
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270 |
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pF |
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diode |
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October 1998 |
2 |
Rev 1.300 |
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