Philips Semiconductors Product specification
Rectifier diodes |
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PBYR645CT series |
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Schottky barrier |
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FEATURES |
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QUICK REFERENCE DATA |
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• Low forward volt drop |
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VR = 35 V/ 40 V/ 45 V |
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• Fast switching |
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a1 |
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a2 |
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• Reverse surge capability |
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1 |
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3 |
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IO(AV) = 10 A |
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• High thermal cycling performance |
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• Low thermal resistance |
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VF ≤ 0.6V |
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k |
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2 |
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GENERAL DESCRIPTION |
PINNING |
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SOT82 |
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Dual, common cathode schottky |
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PIN |
DESCRIPTION |
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rectifier diodes in a plastic |
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envelope. Intended for use as |
1 |
anode 1 |
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output rectifiers in low voltage, high |
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frequency switched mode power |
2 |
cathode |
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supplies. |
3 |
anode 2 |
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The PBYR645CT series is supplied |
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in the conventional leaded SOT82 |
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tab |
cathode |
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package. |
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1 |
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2 |
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3 |
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LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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MAX. |
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UNIT |
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PBYR6 |
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35CT |
40CT |
45CT |
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VRRM |
Peak repetitive reverse |
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- |
35 |
40 |
45 |
V |
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voltage |
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VRWM |
Working peak reverse |
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35 |
40 |
45 |
V |
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voltage |
Tmb ≤ 100 ˚C |
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VR |
Continuous reverse voltage |
- |
35 |
40 |
45 |
V |
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IO(AV) |
Average rectified output |
square wave; δ = 0.5; Tmb ≤ 119 ˚C |
- |
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10 |
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A |
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current (both diodes |
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conducting) |
square wave; δ = 0.5; Tmb ≤ 119 ˚C |
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IFRM |
Repetitive peak forward |
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10 |
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A |
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current per diode |
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IFSM |
Non-repetitive peak forward |
t = 10 ms |
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75 |
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A |
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current diode |
t = 8.3 ms |
- |
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82 |
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A |
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sinusoidal; Tj = 125 ˚C prior to |
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surge; with reapplied VRRM(max) |
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IRRM |
Peak repetitive reverse |
pulse width and repetition rate |
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1 |
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A |
Tj |
surge current per diode |
limited by Tj max |
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Operating junction |
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150 |
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˚C |
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temperature |
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Tstg |
Storage temperature |
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- 65 |
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150 |
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˚C |
THERMAL RESISTANCES
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Rth j-mb |
Thermal resistance junction |
per diode |
- |
- |
5 |
K/W |
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to mounting base |
both diodes |
- |
- |
4 |
K/W |
Rth j-a |
Thermal resistance junction |
in free air |
- |
100 |
- |
K/W |
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to ambient |
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May 1998 |
1 |
Rev 1.200 |
Philips Semiconductors Product specification
Rectifier diodes |
|
PBYR645CT series |
|
||||
Schottky barrier |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 ˚C unless otherwise specified |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
Forward voltage |
IF = 5 A; Tj = 125˚C |
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0.51 |
0.6 |
V |
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IR |
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IF = 10 A |
- |
0.72 |
0.87 |
V |
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Reverse current |
VR = VRWM |
- |
0.12 |
0.5 |
mA |
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Cd |
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VR = VRWM; Tj = 100˚C |
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10 |
15 |
mA |
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Junction capacitance |
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C |
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150 |
- |
pF |
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May 1998 |
2 |
Rev 1.200 |
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