Philips Semiconductors Product specification
Rectifier diodes |
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PBYL3025CT, PBYL3025CTB series |
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Schottky barrier |
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FEATURES |
SYMBOL |
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QUICK REFERENCE DATA |
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• Low forward volt drop |
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VR = 20 V/ 25 V |
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• Fast switching |
a1 |
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a2 |
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• Reverse surge capability |
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1 |
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3 |
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IO(AV) = 30 A |
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• High thermal cycling performance |
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• Low thermal resistance |
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VF ≤ 0.43 V |
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k |
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2 |
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GENERAL DESCRIPTION
Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYL3025CT series is supplied in the SOT78 (TO220AB) conventional leaded package. The PBYL3025CTB series is supplied in the SOT404 surface mounting package.
PINNING |
SOT78 (TO220AB) |
SOT404 |
PIN DESCRIPTION
tab
1gate
2drain 1
3source tab drain
1 2 3
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tab |
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2 |
1 |
3 |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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PBYL30 |
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20CT |
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25CT |
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PBYL30 |
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20CTB |
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25CTB |
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VRRM |
Peak repetitive reverse |
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20 |
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25 |
V |
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voltage |
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VRWM |
Working peak reverse |
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20 |
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25 |
V |
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voltage |
Tmb ≤ 120 ˚C |
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VR |
Continuous reverse voltage |
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20 |
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25 |
V |
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IO(AV) |
Average rectified output |
square wave; δ = 0.5; Tmb ≤ 123 ˚C |
- |
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30 |
A |
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current (both diodes |
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conducting) |
square wave; δ = 0.5; Tmb ≤ 123 ˚C |
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IFRM |
Repetitive peak forward |
- |
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30 |
A |
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current per diode |
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IFSM |
Non-repetitive peak forward |
t = 10 ms |
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135 |
A |
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current per diode |
t = 8.3 ms |
- |
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150 |
A |
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sinusoidal; Tj = 125 ˚C prior to |
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IRRM |
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surge; with reapplied VRRM(max) |
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Peak repetitive reverse |
pulse width and repetition rate |
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1 |
A |
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Tj |
surge current per diode |
limited by Tj max |
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Operating junction |
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150 |
˚C |
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temperature |
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Tstg |
Storage temperature |
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- 65 |
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175 |
˚C |
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1. It is not possible to make connection to pin 2 of the SOT404 package.
March 1998 |
1 |
Rev 1.000 |
Philips Semiconductors Product specification
Rectifier diodes |
PBYL3025CT, PBYL3025CTB series |
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Schottky barrier |
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THERMAL RESISTANCES |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Rth j-mb |
Thermal resistance junction |
per diode |
- |
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2 |
K/W |
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to mounting base |
both diodes |
- |
- |
1.5 |
K/W |
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Rth j-a |
Thermal resistance junction |
SOT78 package, in free air |
- |
60 |
- |
K/W |
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to ambient |
SOT404 package, pcb mounted, minimum |
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50 |
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K/W |
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footprint, FR4 board |
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ELECTRICAL CHARACTERISTICS |
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All characteristics are per diode at Tj = 25 ˚C unless otherwise specified |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
Forward voltage |
IF = 15 A; Tj = 150˚C |
- |
0.35 |
0.43 |
V |
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IF = 15 A; Tj = 125˚C |
- |
0.38 |
0.46 |
V |
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IF = 30 A; Tj = 125˚C |
- |
0.52 |
0.6 |
V |
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IR |
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IF = 30 A |
- |
0.6 |
0.67 |
V |
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Reverse current |
VR = VRWM |
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1 |
5 |
mA |
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VR = VRWM; Tj = 100˚C |
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22 |
40 |
mA |
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Cd |
Junction capacitance |
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C |
- |
700 |
- |
pF |
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March 1998 |
2 |
Rev 1.000 |
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