Philips PDZ12B, PDZ13B, PDZ15B, PDZ30B, PDZ27B Datasheet

DATA SH EET

Product specification

Supersedes data of 1998 Jan 09

1998 Apr 23

DISCRETE SEMICONDUCTORS

PDZ-B series

Voltage regulator diodes

ook, halfpage

M3D049

1998 Apr 23 2

Philips Semiconductors Product specification

Voltage regulator diodes PDZ-B series

FEATURES

• Total power dissipation:

max. 400 mW

• Small plastic package suitable for

surface mounted design

• Wide variety of voltage ranges:

nom. 2.4 to 36 V (E24 range).

APPLICATIONS

• General voltage regulation.

DESCRIPTION

Low-power general purpose voltage

regulator diodes in a small plastic

SMD SOD323 package.

PINNING

PIN DESCRIPTION

1 cathode

2 anode

Fig.1 Simplified outline (SOD323) and symbol.

handbook, halfpage

12

Top view

MAM387

MARKING

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

PDZ2.4B Z0 PDZ5.1B Z8 PDZ11B ZG PDZ24B ZQ

PDZ2.7B Z1 PDZ5.6B Z9 PDZ12B ZH PDZ27B ZR

PDZ3.0B Z2 PDZ6.2B ZA PDZ13B ZJ PDZ30B ZS

PDZ3.3B Z3 PDZ6.8B ZB PDZ15B ZK PDZ33B ZT

PDZ3.6B Z4 PDZ7.5B ZC PDZ16B ZL PDZ36B ZU

PDZ3.9B Z5 PDZ8.2B ZD PDZ18B ZM

PDZ4.3B Z6 PDZ9.1B ZE PDZ20B ZN

PDZ4.7B Z7 PDZ10B ZF PDZ22B ZP

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

F

continuous forward current − 200 mA

I

ZSM

non-repetitive peak reverse current t

p

= 100 µs; square wave;

T

amb

=25°C prior to surge

see Table 2

P

tot

total power dissipation T

amb

=25°C; note 1; see Fig.2 − 400 mW

T

stg

storage temperature −65 +150 °C

T

j

junction temperature − 150 °C

1998 Apr 23 3

Philips Semiconductors Product specification

Voltage regulator diodes PDZ-B series

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.

ELECTRICAL CHARACTERISTICS

Table 1 Total series

T

j

=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point 130 K/W

R

th j-a

thermal resistance from junction to ambient note 1 340 K/W

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

F

forward voltage I

F

= 10 mA; see Fig.3 0.9 V

I

F

= 100 mA; see Fig.3 1.1 V

I

R

reverse current

PDZ2.4B V

R

=1V 50 µA

PDZ2.7B V

R

=1V 20 µA

PDZ3.0B V

R

=1V 10 µA

PDZ3.3B V

R

=1V 5 µA

PDZ3.6B V

R

=1V 5 µA

PDZ3.9B V

R

=1V 3 µA

PDZ4.3B V

R

=1V 3 µA

PDZ4.7B V

R

=1V 2 µA

PDZ5.1B V

R

= 1.5 V 2 µA

PDZ5.6B V

R

= 2.5 V 1 µA

PDZ6.2B V

R

= 3 V 500 nA

PDZ6.8B V

R

= 3.5 V 500 nA

PDZ7.5B V

R

= 4 V 500 nA

PDZ8.2B V

R

= 5 V 500 nA

PDZ9.1B V

R

= 6 V 500 nA

PDZ10B V

R

= 7 V 100 nA

PDZ11B V

R

= 8 V 100 nA

PDZ12B V

R

= 9 V 100 nA

PDZ13B V

R

= 10 V 100 nA

PDZ15B V

R

= 11 V 50 nA

PDZ16B V

R

= 12 V 50 nA

PDZ18B V

R

= 13 V 50 nA

PDZ20B V

R

= 15 V 50 nA

PDZ22B V

R

= 17 V 50 nA

PDZ24B V

R

= 19 V 50 nA

PDZ27B V

R

= 21 V 50 nA

PDZ30B V

R

= 23 V 50 nA

PDZ33B V

R

= 25 V 50 nA

PDZ36B V

R

= 27 V 50 nA