Philips PBYR735B, PBYR735D, PBYR740B, PBYR740D, PBYR745D Datasheet

0 (0)
Philips PBYR735B, PBYR735D, PBYR740B, PBYR740D, PBYR745D Datasheet

Philips Semiconductors Product specification

Rectifier diodes

 

 

 

 

 

PBYR745B, PBYR745D series

 

Schottky barrier

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FEATURES

SYMBOL

 

 

 

 

 

QUICK REFERENCE DATA

 

• Low forward volt drop

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VR = 40 V/ 45 V

 

• Fast switching

 

k

 

 

a

 

 

 

• Reverse surge capability

 

 

 

 

 

IF(AV) = 7.5 A

 

 

 

 

 

• High thermal cycling performance

tab

 

3

 

 

 

 

 

• Low thermal resistance

 

 

 

 

 

 

 

VF 0.57 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GENERAL DESCRIPTION

Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.

The PBYR745B series is supplied in the SOT404 surface mounting package.

The PBYR745D series is supplied in the SOT428 surface mounting package.

PINNING

SOT404

SOT428

PIN DESCRIPTION

1no connection

2cathode1

3anode

tab cathode

 

tab

 

tab

 

2

 

2

1

3

1

3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

 

MIN.

 

MAX.

UNIT

 

 

 

PBYR7

 

40B

 

45B

 

 

 

 

PBYR7

 

40D

 

45D

 

VRRM

Peak repetitive reverse

 

 

-

40

 

45

V

 

voltage

 

 

 

 

 

 

 

VRWM

Working peak reverse

 

 

-

40

 

45

V

 

voltage

Tmb 114 ˚C

 

 

 

 

 

 

VR

Continuous reverse voltage

 

-

40

 

45

V

IF(AV)

Average rectified forward

square wave; δ = 0.5; Tmb 136 ˚C

-

 

7.5

A

 

current

square wave; δ = 0.5; Tmb 136 ˚C

 

 

 

 

 

IFRM

Repetitive peak forward

-

 

15

A

 

current

 

 

 

 

 

 

 

IFSM

Non-repetitive peak forward

t = 10 ms

PBYR7..B

-

 

135

A

 

current

t = 8.3 ms

 

-

 

150

A

 

 

t = 10 ms

PBYR7..D

-

 

100

A

 

 

t = 8.3 ms

 

-

 

110

A

 

 

sinusoidal; Tj = 125 ˚C prior to

 

 

 

 

 

IRRM

 

surge; with reapplied VRRM(max)

 

 

 

 

 

Peak repetitive reverse

pulse width and repetition rate

-

 

1

A

Tj

surge current

limited by Tj max

 

 

 

 

 

 

Operating junction

 

 

-

 

150

˚C

 

temperature

 

 

 

 

 

 

 

Tstg

Storage temperature

 

 

- 65

 

175

˚C

1. It is not possible to make connection to pin 2 of the SOT404 or SOT428 package.

July 1998

1

Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes

 

PBYR745B, PBYR745D series

 

Schottky barrier

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL RESISTANCES

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

 

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

 

Rth j-mb

Thermal resistance junction

 

 

to mounting base

 

Rth j-a

Thermal resistance junction

pcb mounted, minimum footprint, FR4

 

to ambient

board

-

-

3

K/W

-

50

-

K/W

 

 

 

 

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

VF

Forward voltage

IF = 7.5 A; Tj = 125˚C

-

0.45

0.57

V

 

 

IF = 15

A; Tj = 125˚C

-

0.65

0.72

V

IR

 

IF = 15

A

-

0.64

0.84

V

Reverse current

VR = VRWM

-

0.13

1

mA

Cd

 

VR = VRWM; Tj = 100˚C

-

17

22

mA

Junction capacitance

VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C

-

270

-

pF

July 1998

2

Rev 1.200

Loading...
+ 4 hidden pages