Philips PDZ11B, PDZ3.3B, PDZ3.6B, PDZ3.9B, PDZ24B Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D049

PDZ-B series

Voltage regulator diodes

Product specification			1998 Apr 23
Supersedes data of 1998 Jan 09

Philips Semiconductors	Product specification
Voltage regulator diodes	PDZ-B series

FEATURES

∙Total power dissipation: max. 400 mW

∙Small plastic package suitable for surface mounted design

∙Wide variety of voltage ranges: nom. 2.4 to 36 V (E24 range).

APPLICATIONS

∙ General voltage regulation.

MARKING

	DESCRIPTION	PINNING
	Low-power general purpose voltage
		PIN	DESCRIPTION
	regulator diodes in a small plastic
		1	cathode
	SMD SOD323 package.
		2	anode

handbook, halfpage 1	2
Top view
		MAM387

Fig.1 Simplified outline (SOD323) and symbol.

TYPE	MARKING	TYPE	MARKING	TYPE	MARKING	TYPE	MARKING
NUMBER	CODE	NUMBER	CODE	NUMBER	CODE	NUMBER	CODE
PDZ2.4B	Z0	PDZ5.1B	Z8	PDZ11B	ZG	PDZ24B	ZQ
PDZ2.7B	Z1	PDZ5.6B	Z9	PDZ12B	ZH	PDZ27B	ZR
PDZ3.0B	Z2	PDZ6.2B	ZA	PDZ13B	ZJ	PDZ30B	ZS
PDZ3.3B	Z3	PDZ6.8B	ZB	PDZ15B	ZK	PDZ33B	ZT
PDZ3.6B	Z4	PDZ7.5B	ZC	PDZ16B	ZL	PDZ36B	ZU
PDZ3.9B	Z5	PDZ8.2B	ZD	PDZ18B	ZM
PDZ4.3B	Z6	PDZ9.1B	ZE	PDZ20B	ZN
PDZ4.7B	Z7	PDZ10B	ZF	PDZ22B	ZP

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
IF	continuous forward current		−	200	mA
IZSM	non-repetitive peak reverse current	tp = 100 μs; square wave;	see Table 2
		Tamb = 25 °C prior to surge
Ptot	total power dissipation	Tamb = 25 °C; note 1; see Fig.2	−	400	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C

Note

1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.

1998 Apr 23

2

Philips Semiconductors				Product specification
Voltage regulator diodes			PDZ-B series
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE		UNIT
Rth j-s	thermal resistance from junction to soldering point		130		K/W
Rth j-a	thermal resistance from junction to ambient	note 1	340		K/W

Note

1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.

ELECTRICAL CHARACTERISTICS

Table 1 Total series

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MAX.	UNIT
VF	forward voltage	IF = 10 mA; see Fig.3	0.9	V
		IF = 100 mA; see Fig.3	1.1	V
IR	reverse current
	PDZ2.4B	VR = 1 V	50	μA
	PDZ2.7B	VR = 1 V	20	μA
	PDZ3.0B	VR = 1 V	10	μA
	PDZ3.3B	VR = 1 V	5	μA
	PDZ3.6B	VR = 1 V	5	μA
	PDZ3.9B	VR = 1 V	3	μA
	PDZ4.3B	VR = 1 V	3	μA
	PDZ4.7B	VR = 1 V	2	μA
	PDZ5.1B	VR = 1.5 V	2	μA
	PDZ5.6B	VR = 2.5 V	1	μA
	PDZ6.2B	VR = 3 V	500	nA
	PDZ6.8B	VR = 3.5 V	500	nA
	PDZ7.5B	VR = 4 V	500	nA
	PDZ8.2B	VR = 5 V	500	nA
	PDZ9.1B	VR = 6 V	500	nA
	PDZ10B	VR = 7 V	100	nA
	PDZ11B	VR = 8 V	100	nA
	PDZ12B	VR = 9 V	100	nA
	PDZ13B	VR = 10 V	100	nA
	PDZ15B	VR = 11 V	50	nA
	PDZ16B	VR = 12 V	50	nA
	PDZ18B	VR = 13 V	50	nA
	PDZ20B	VR = 15 V	50	nA
	PDZ22B	VR = 17 V	50	nA
	PDZ24B	VR = 19 V	50	nA
	PDZ27B	VR = 21 V	50	nA
	PDZ30B	VR = 23 V	50	nA
	PDZ33B	VR = 25 V	50	nA
	PDZ36B	VR = 27 V	50	nA

1998 Apr 23

3