MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD136/D
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BD136 |
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Plastic Medium Power |
Silicon |
BD138 |
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BD140 |
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PNP Transistor |
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BD140-10 |
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. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi |
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complementary circuits. |
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• DC Current Gain Ð h FE = 40 (Min) @ IC = 0.15 Adc |
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1.5 AMPERE |
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• BD 136, 138, 140 are complementary with BD 135, 137, 139 |
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POWER TRANSISTORS |
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PNP SILICON |
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45, 60, 80 VOLTS |
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10 WATTS |
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CASE 77±08
TO±225AA TYPE
MAXIMUM RATINGS
Rating |
Symbol |
Type |
Value |
Unit |
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Collector±Emitter Voltage |
VCEO |
BD 136 |
45 |
Vdc |
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BD 138 |
60 |
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BD 140 |
80 |
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Collector±Base Voltage |
VCBO |
BD 136 |
45 |
Vdc |
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BD 138 |
60 |
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BD 140 |
100 |
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Emitter±Base Voltage |
VEBO |
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5 |
Vdc |
Collector Current |
IC |
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1.5 |
Adc |
Base Current |
IB |
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0.5 |
Adc |
Total Device Dissipation@ TA = 25_C |
PD |
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1.25 |
Watts |
Derate above 25_C |
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10 |
mW/_C |
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Total Device Dissipation @ TC = 25_C |
PD |
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12.5 |
Watt |
Derate above 25_C |
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100 |
mW/_C |
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Operating and Storage Junction |
TJ, Tstg |
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± 55 to +150 |
_C |
Temperarture Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
θJC |
10 |
_C/W |
Thermal Resistance, Junction to Ambient |
θJA |
100 |
_C/W |
REV 7
Motorola, Inc. 1995
BD136 BD138 BD140 BD140-10
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
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Symbol |
Type |
Min |
Max |
Unit |
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Collector±Emitter Sustaining Voltage* |
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BVCEO |
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Vdc |
(IC = 0.03 Adc, IB = 0) |
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BD 136 |
45 |
Ð |
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BD 138 |
60 |
Ð |
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BD 140 |
80 |
Ð |
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Collector Cutoff Current |
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ICBO |
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μAdc |
(VCB = 30 Vdc, IE = 0) |
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Ð |
0.1 |
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(VCB = 30 Vdc, IE = 0, TC = 125 _C) |
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Ð |
10 |
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Emitter Cutoff Current |
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IEBO |
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Ð |
10 |
μAdc |
(VBE = 5.0 Vdc, IC = 0) |
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DC Current Gain |
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Ð |
(IC = 0.005 A, VCE = 2 V) |
ALL |
h * |
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25 |
Ð |
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FE |
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40 |
250 |
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(IC = 0.15 A, VCE = 2 V) |
ALL |
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BD140±10 |
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63 |
160 |
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(IC = 0.5 A, VCE = 2 V) |
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25 |
Ð |
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Collector±Emitter Saturation Voltage* |
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VCE(sat)* |
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Ð |
0.5 |
Vdc |
(IC = 0.5 Adc, IB = 0.05 Adc) |
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Base±Emitter On Voltage* |
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VBE(on)* |
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Ð |
1 |
Vdc |
(IC = 0.5 Adc, VCE = 2.0 Vdc) |
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* Pulse Test: Pulse Width x 300 μs, Duty Cycle x 2.0%. |
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10 |
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(AMP) |
5.0 |
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0.1 ms |
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2.0 |
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5 ms |
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0.5 ms |
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CURRENT |
1.0 |
TJ = 125°C |
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0.5 |
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dc |
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COLLECTOR |
0.2 |
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0.1 |
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0.05 |
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BD136 |
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, |
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C |
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I |
0.02 |
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BD138 |
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BD140 |
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0.01 |
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2 |
5 |
10 |
20 |
50 |
80 |
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1 |
VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 1. Active±Region Safe Operating Area
2 |
Motorola Bipolar Power Transistor Device Data |
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