Motorola BUX48A, BUX48 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BUX48/D

SWITCHMODE II Series

NPN Silicon Power Transistors

The BUX 48/BUX 48A transistors are designed for high±voltage, high±speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line±operated SWITCHMODE applications such as:

•Switching Regulators

•Inverters

•Solenoid and Relay Drivers

•Motor Controls

•Deflection Circuits

Fast Turn±Off Times

BUX48

BUX48A

15 AMPERES

NPN SILICON

POWER TRANSISTORS 400 AND 450 VOLTS

V(BR)CEO

850 ± 1000 VOLTS

V(BR)CEX

175 WATTS

60 ns Inductive Fall Time Ð 25 _C (Typ)

120 ns Inductive Crossover Time Ð 25 _C (Typ) Operating Temperature Range ±65 to +200_C

100_C Performance Specified for:

Reverse±Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltage

Leakage Currents (125_C)

MAXIMUM RATINGS

CASE 1±07 TO±204AA (TO±3)

Rating	Symbol	BUX48		BUX48A	Unit
Collector±Emitter Voltage	VCEO(sus)	400		450	Vdc
Collector±Emitter Voltage (VBE = ± 1.5 V)	VCEX	850		1000	Vdc
Emitter Base Voltage	VEB		7		Vdc
Collector Current Ð Continuous	IC		15		Adc
Ð Peak (1)	ICM		30
Ð Overload	IOI		60
Base Current Ð Continuous	IB		5		Adc
Ð Peak (1)	IBM		20
Total Power Dissipation Ð T C = 25_C	PD		175		Watts
Ð T C = 100_C			100
Derate above 25_C			1		W/_C
Operating and Storage Junction Temperature Range	TJ, Tstg	± 65 to +200			_C

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction to Case	RqJC	1	_C/W
Maximum Lead Temperature for Soldering Purposes:	TL	275	_C
1/8″ from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

SWITCHMODE is a trademark of Motorola, Inc.

REV 7

Motorola, Inc. 1995

BUX48 BUX48A

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (1)

Collector±Emitter Sustaining Voltage (Table 1)

VCEO(sus)

Vdc

(IC = 200 mA, IB = 0) L = 25 mH

BUX48

400

Ð

Ð

BUX48A

450

Ð

Ð

Collector Cutoff Current

ICEX

mAdc

(VCEX = Rated Value, VBE(off) = 1.5 Vdc)

Ð

Ð

0.2

(VCEX = Rated Value, VBE(off) = 1.5 Vdc, TC = 125_C)

Ð

Ð

2

Collector Cutoff Current

ICER

mAdc

(VCE = Rated VCEX, RBE = 10 Ω)

TC = 25_C

Ð

Ð

0.5

TC = 125_C

Ð

Ð

3

Emitter Cutoff Current

IEBO

Ð

Ð

0.1

mAdc

(VEB = 5 Vdc, IC = 0)

Emitter±Base Breakdown Voltage

V(BR)EBO

7

Ð

Ð

Vdc

(IE = 50 mA ± IC = 0)

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

IS/b

See Figure 12

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 13

ON CHARACTERISTICS (1)

DC Current Gain

hFE

(IC = 10 Adc, VCE = 5 Vdc)

BUX48

8

Ð

Ð

(IC = 8 Adc, VCE = 5 Vdc)

BUX48A

8

Ð

Ð

Collector±Emitter Saturation Voltage

VCE(sat)

Vdc

(IC = 10 Adc, IB = 2 Adc)

Ð

Ð

1.5

(IC = 15 Adc, IB = 3 Adc)

BUX48

Ð

Ð

5

(IC = 10 Adc, IB = 2 Adc, TC = 100_C)

Ð

Ð

2

(IC = 8 Adc, IB = 1.6 Adc)

Ð

Ð

1.5

(IC = 12 Adc, IB = 2.4 Adc)

BUX48A

Ð

Ð

5

(IC = 8 Adc, IB = 1.6 Adc, TC = 100_C)

Ð

Ð

2

Base±Emitter Saturation Voltage

VBE(sat)

Vdc

(IC = 10 Adc, IB = 2 Adc)

BUX48

Ð

Ð

1.6

(IC = 10 Adc, IB = 2 Adc, TC = 100_C)

Ð

Ð

1.6

(IC = 8 Adc, IB = 1.6 Adc)

Ð

Ð

1.6

(IC = 8 Adc, IB = 1.6 Adc, TC = 100_C)

BUX48A

Ð

Ð

1.6

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

Ð

Ð

350

pF

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

SWITCHING CHARACTERISTICS Resistive Load (Table 1)

Delay Time

IC = 10 A, IB = 2 A

BUX48

td

Ð

0.1

0.2

μs

Rise Time

tr

Ð

0.4

0.7

IC = 8 A, IB = 1.6 A

BUX48A

Storage Time

Duty Cycle = 2%, VBE(off) = 5 V

t

Ð

1.3

2

Tp = 30 μs, VCC = 300 V

s

Fall Time

tf

Ð

0.2

0.4

Inductive Load, Clamped (Table 1)

Storage Time

IC = 10 A

_

tsv

Ð

1.3

Ð

μs

IB1 = 2 A

BUX48

(TC = 25 C)

Fall Time

t

Ð

0.06

Ð

fi

Storage Time

IC = 8 A

tsv

Ð

1.5

2.5

Crossover Time

(TC = 100_C)

tc

Ð

0.3

0.6

I = 1.6 A

BUX48A

B1

Fall Time

tfi

Ð

0.17

0.35

(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2%.

Vcl = 300 V, VBE(off) = 5 V, Lc = 180μH

3±402

Motorola Bipolar Power Transistor Device Data

														BUX48		BUX48A
								DC CHARACTERISTICS
	50			90%					(VOLTS)	10
	30
										5
	20								VOLTAGE
CURRENT GAIN										3	IC = 5 A	7.5 A	10 A		15 A
				10%
	10
	7									1
	5
, DC									COLLECTOR±EMITTER
										0.5
FE	3
h	2									0.3
		VCE = 5 V									TC = 25°C
									,
	1								CE	0.1
		2	3	5	8	10	20	30	V			0.3	0.5	1	2	3	4
	1								50	0.1

IC, COLLECTOR CURRENT (AMPS)	IB, BASE CURRENT (AMPS)
Figure 1. DC Current Gain	Figure 2. Collector Saturation Region

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

5	βf = 5
3									(VOLTS)
2					90%					2
							10%		VOLTAGE			TJ = 25°C
1										1
0.7									BASE±EMITTER,	0.7			TJ = 100°C
0.5										0.5
0.3										0.3
0.2									BE
									V
0.1	2	3	5	7	10	20	30	50		0.1	0.3	1	3	10
1
		IC, COLLECTOR CURRENT (AMPS)										IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector±Emitter Saturation Voltage

Figure 4. Base±Emitter Voltage

	104	VCE = 250 V
μA)	103
(						CAPACITANCEC,(pF)
CURRENTCOLLECTOR	TJ = 150°C
	102	125°C
	101	100°C
C	0	75°C		FORWARD
		REVERSE
,	10
I
		25°C
	10±1	± 0.2	0	0.2	0.4	0.6
	± 0.4
		VBE, BASE±EMITTER VOLTAGE (VOLTS)

10 k

Cib

1 k

Cob

100

TJ = 25°C

10

1

10

100

1000

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Collector Cutoff Region

Figure 6. Capacitance

Motorola Bipolar Power Transistor Device Data

3±403