Motorola BD681, BD677A, BD679A, BD679, BD677 Datasheet
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD675/D
Plastic Medium-Power
Silicon NPN Darlingtons
. . . for use as output devices in complementary general±purpose amplifier applications.
• High DC Current Gain Ð
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
•Monolithic Construction
•BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682
•BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
MAXIMUM RATINGS
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BD675 |
BD677 |
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BD679 |
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Rating |
Symbol |
BD675A |
BD677A |
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BD679A |
BD681 |
Unit |
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Collector±Emitter Voltage |
VCEO |
45 |
60 |
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80 |
100 |
Vdc |
Collector±Base Voltage |
VCB |
45 |
60 |
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80 |
100 |
Vdc |
Emitter±Base Voltage |
VEB |
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5.0 |
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Vdc |
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Collector Current |
IC |
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4.0 |
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Adc |
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Base Current |
IB |
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0.1 |
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Adc |
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Total Device Dissipation |
PD |
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40 |
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Watts |
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@TC = 25_C |
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Derate above 25_C |
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0.32 |
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W/_C |
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Operating and Storage Junction |
TJ, Tstg |
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± 55 to +150 |
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_C |
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Temperating Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
θJC |
3.13 |
_C/W |
BD675
BD675A
BD677
BD677A
BD679
BD679A BD681*
*Motorola Preferred Device
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS
40 WATTS
CASE 77±08
TO±225AA TYPE
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50 |
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(WATTS) |
45 |
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40 |
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35 |
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DISSIPATION |
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30 |
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25 |
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20 |
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,POWER |
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15 |
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10 |
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D |
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P |
5.0 |
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0 |
30 |
45 |
60 |
75 |
90 |
105 |
120 |
135 |
150 |
165 |
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15 |
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TC, CASE TEMPERATURE (°C) |
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Figure 1. Power Temperature Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
Motorola, Inc. 1995
BD675 |
BD675A |
BD677 |
BD677A |
BD679 |
BD679A |
BD681 |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Breakdown Voltage(1) |
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BD675, 675A |
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BVCEO |
45 |
Ð |
Vdc |
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(IC = 50 mAdc, IB = 0) |
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BD677, 677A |
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60 |
Ð |
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BD679, 679A |
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80 |
Ð |
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BD681 |
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100 |
Ð |
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Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0) |
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ICEO |
Ð |
500 |
μAdc |
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Collector Cutoff Current |
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ICBO |
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mAdc |
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(VCB = Rated BVCEO, IE = 0) |
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Ð |
0.2 |
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(VCB = Rated BVCEO, IE = 0, TC = 100'C) |
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Ð |
2.0 |
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Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) |
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IEBO |
Ð |
2.0 |
mAdc |
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ON CHARACTERISTICS |
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DC Currert Gain(1) |
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hFE |
750 |
Ð |
Ð |
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(IC = 1.5 Adc,VCE = 3.0 Vdc) |
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BD675, 677, 679, 681 |
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(IC = 2.0 Adc, VCE = 3.0 Vdc) |
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BD675A, 677A, 679A |
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750 |
Ð |
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Collector±Emitter Saturation Voltage(1) |
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(IC = 1.5 Adc, IB = 30 mAdc) |
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BD677, 679, 681 |
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VCE(sat) |
Ð |
2.5 |
Vdc |
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(IC = 2.0 Adc, IB = 40 mAdc) |
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BD675A, 677A, 679A |
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Ð |
2.8 |
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Base±Emitter On Voltage(1) |
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V |
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Vdc |
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(IC = 1.5 Adc, VCE = 3.0 Vdc) |
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BD677, 679, 681 |
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BE(on) |
Ð |
2.5 |
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(IC = 2.0 Adc, VCE = 3 0 Vdc) |
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BD675A, 677A, 679A |
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Ð |
2.5 |
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DYNAMIC CHARACTERISTICS |
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Small Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) |
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hfe |
1.0 |
Ð |
Ð |
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(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.
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5.0 |
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(AMP) |
2.0 |
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CURRENT |
1.0 |
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BONDING WIRE LIMIT |
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COLLECTOR, |
0.5 |
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THERMALLY LIMIT at TC = 25°C |
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SECONDARY BREAKDOWN LIMIT |
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0.2 |
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BD675, 675A |
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C |
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T |
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° |
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BD677, 677A |
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0.1 |
C |
= 25 C |
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I |
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BD679, 679A |
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0.05 |
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BD681 |
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2.0 |
5.0 |
10 |
20 |
50 |
100 |
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1.0 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.
NPN |
COLLECTOR |
BD675, 675A |
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BD677, 677A |
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BD679, 679A |
|
BD681 |
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BASE |
|
[ 8.0 k |
[ 120 |
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EMITTER |
Figure 3. Darlington Circuit Schematic
2 |
Motorola Bipolar Power Transistor Device Data |
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