Motorola BDB02D, BDB02C Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BDB02C/D

One Watt Amplifier Transistors

PNP Silicon

COLLECTOR

3

2

BASE

1

EMITTER

MAXIMUM RATINGS

Rating

Symbol

BDB02C

BDB02D

Unit

Collector± Emitter Voltage

VCEO

±80

±100

Vdc

Collector± Base Voltage

VCES

±80

±100

Vdc

Emitter± Base Voltage

VEBO

±5.0

Vdc

Collector Current Ð Continuous

IC

±0.5

Adc

Total Device Dissipation

PD

1.0

Watt

@ TA = 25°C

8.0

mW/°C

Derate above 25°C

Total Device Dissipation

PD

2.5

Watt

@ TC = 25°C

20

mW/°C

Derate above 25°C

Operating and Storage Junction

TJ, Tstg

± 55 to +150

°C

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

125

°C/W

Thermal Resistance, Junction to Case

RqJC

50

°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

BDB02C,D

1

2 3

CASE 29±05, STYLE 1 TO±92 (TO±226AE)

Characteristic		Symbol	Min	Max	Unit
OFF CHARACTERISTICS
Collector± Emitter Voltage	BDB02C	V(BR)CEO	±80	Ð	Vdc
(IC = ±10 mA, IB = 0)	BDB02D		±100	Ð
Collector Cutoff Current		ICBO			mAdc
(VCB = ±80 V, IE = 0)	BDB02C		Ð	±0.1
(VCB = ±100 V, IE = 0)	BDB02D		Ð	±0.1
Emitter Cutoff Current (IC = 0, VEB = ±5.0 V)		IEBO	Ð	±100	nAdc
ON CHARACTERISTICS
DC Current Gain		hFE			Ð
(IC = ±100 mA, VCE = ±1.0 V)			40	400
(IC = ±500 mA, VCE = ±2.0 V)			25	Ð
Collector± Emitter Saturation Voltage(1) (IC = ±1000 mA, IB = ±100 mA)		VCE(sat)	Ð	±0.7	Vdc
Collector± Emitter On Voltage(1) (IC = ±1000 mA, VCE = ±1.0 V)		VBE(on)	Ð	±1.2	Vdc
DYNAMIC CHARACTERISTICS
Current±Gain Ð Bandwidth Product (I C = ±200 mA, VCE = ±5.0 V, f = 20 MHz)		fT	50	Ð	MHz
Output Capacitance (VCB = ±10 V, IE = 0, f = 1.0 MHz)		Cob	Ð	30	pF
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle 2.0%.

Motorola, Inc. 1996

BDB02C,D

400

TJ = 125°C

VCE = ±1.0 V

GAIN

200

25°C

CURRENT

±55°C

, DC

100

FE

80

h

60

40

±0.5

±0.7

±1.0

±2.0

±3.0

±5.0

±7.0

±10

±20

±30

±50

±70

±100

±200

±300

±500

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

(VOLTS)

±1.0

±1.0

TJ = 25°C

TJ = 25°C

COLLECTOR±EMITTER VOLTAGE

±0.8

±0.8

VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

±0.6

IC = ±10 mA

±50

±100 mA

±250 mA

±500 mA

±0.6

VBE(on) @ VCE = ±1.0 V

mA

±0.4

±0.4

±0.2

±0.2

VCE(sat) @ IC/IB = 10

,

CE

V

0

0

±0.05

±0.1

±0.2

±0.5

±1.0

±2.0

±5.0

±10

±20

±50

±0.5

±1.0

±2.0

±5.0

±10

±20

±50

±100

±200

±500

IB, BASE CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 2. Collector Saturation Region

Figure 3. On Voltages

(mV/°C)

±0.8

100

70

Cibo

TJ = 25°C

±1.2

COEFFICIENTTEMPERATURE

(pF)CAPACITANCEC,

50

±1.6

30

±2.0

θVB for VBE

20

±2.4

10

Cobo

,

7.0

VB

θ

±2.8

5.0

±0.5

±1.0

±2.0

±5.0

±10

±20

±50

±100

±200

±500

±0.1

±0.2

±0.5

±1.0

±2.0

±5.0

±10

±20

±50

±100

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Base±Emitter Temperature Coefficient

Figure 5. Capacitance

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data