MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BCW69LT1/D
General Purpose Transistors
PNP Silicon
COLLECTOR 3
1 BASE
2 EMITTER
MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
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Collector±Emitter Voltage |
VCEO |
±45 |
Vdc |
Emitter±Base Voltage |
VEBO |
±5.0 |
Vdc |
Collector Current Ð Continuous |
IC |
±100 |
mAdc |
DEVICE MARKING
BCW69LT1 = H1; BCW70LT1 = H2
THERMAL CHARACTERISTICS
BCW69LT1
BCW70LT1
1
2
CASE 318 ± 08, STYLE 6 SOT± 23 (TO ± 236AB)
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Characteristic |
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Symbol |
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Max |
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Total Device Dissipation FR-5 Board (1) |
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PD |
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225 |
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mW |
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TA = 25°C |
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mW/°C |
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Derate above 25°C |
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1.8 |
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Thermal Resistance, Junction to Ambient |
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RθJA |
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556 |
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°C/W |
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Total Device Dissipation |
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PD |
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300 |
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mW |
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Alumina Substrate, (2) T = 25°C |
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A |
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Derate above 25°C |
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2.4 |
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mW/°C |
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Thermal Resistance, Junction to Ambient |
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RθJA |
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417 |
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°C/W |
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Junction and Storage Temperature |
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TJ, Tstg |
± 55 to +150 |
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°C |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) |
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Characteristic |
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Symbol |
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Min |
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Max |
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Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Breakdown Voltage (IC = ±2.0 mAdc, IB = 0) |
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V(BR)CEO |
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±45 |
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Ð |
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Vdc |
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Collector±Emitter Breakdown Voltage (IC = ±100 μAdc, VEB = 0) |
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V(BR)CES |
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±50 |
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Ð |
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Vdc |
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Emitter±Base Breakdown Voltage (IE = ±10 μAdc, IC = 0) |
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V(BR)EBO |
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±5.0 |
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Ð |
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Vdc |
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Collector Cutoff Current |
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ICBO |
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(VCB = ±20 Vdc, IE = 0) |
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Ð |
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±100 |
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nAdc |
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(VCB = ±20 Vdc, IE = 0, TA = 100°C) |
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Ð |
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±10 |
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μAdc |
1. |
FR±5 = 1.0 x 0.75 x 0.062 in. |
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2. |
Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina |
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Thermal Clad is a trademark of the Bergquist Company
Motorola, Inc. 1996
BCW69LT1 BCW70LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic |
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Symbol |
Min |
Max |
Unit |
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ON CHARACTERISTICS |
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DC Current Gain |
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hFE |
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Ð |
(IC = ±2.0 mAdc, VCE = ±5.0 Vdc) |
BCW69 |
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120 |
260 |
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BCW70 |
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215 |
500 |
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Collector±Emitter Saturation Voltage (IC = ±10 mAdc, IB = ±0.5 mAdc) |
VCE(sat) |
Ð |
±0.3 |
Vdc |
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Base±Emitter On Voltage (IC = ±2.0 mAdc, VCE = ±5.0 Vdc) |
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VBE(on) |
±0.6 |
±0.75 |
Vdc |
SMALL±SIGNAL CHARACTERISTICS |
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Output Capacitance |
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Cobo |
Ð |
7.0 |
pF |
(IE = 0, VCB = ±10 Vdc, f = 1.0 MHz) |
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Noise Figure |
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NF |
Ð |
10 |
dB |
(IC = ±0.2 mAdc, VCE = ±5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) |
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2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
BCW69LT1 BCW70LT1
TYPICAL NOISE CHARACTERISTICS
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(VCE = ±5.0 Vdc, TA = 25°C) |
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10 |
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1.0 |
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BANDWIDTH = 1.0 Hz |
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7.0 |
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BANDWIDTH = 1.0 Hz |
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7.0 |
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RS ≈ 0 |
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5.0 |
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IC = 1.0 mA |
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RS ≈ ∞ |
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(nV) |
5.0 |
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IC = 10 μA |
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(pA) |
3.0 |
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, NOISE VOLTAGE |
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,NOISE CURRENT |
2.0 |
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30 μA |
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1.0 |
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300 μA |
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3.0 |
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100 μA |
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0.7 |
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100 |
μ |
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300 μA |
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0.5 |
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A |
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2.0 |
1.0 mA |
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n |
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n |
0.3 |
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30 μA |
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e |
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I |
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0.2 |
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10 μA |
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1.0 |
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0.1 |
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10 |
20 |
50 |
100 |
200 |
500 |
1.0 k |
2.0 k |
5.0 k |
10 k |
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10 |
20 |
50 |
100 |
200 |
500 |
1.0 k |
2.0 k |
5.0 k |
10 k |
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f, FREQUENCY (Hz) |
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f, FREQUENCY (Hz) |
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Figure 1. Noise Voltage |
Figure 2. Noise Current |
NOISE FIGURE CONTOURS
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(VCE = ±5.0 Vdc, TA = 25°C) |
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1.0 M |
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1.0 M |
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(OHMS) |
500 k |
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BANDWIDTH = 1.0 Hz |
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(OHMS) |
500 k |
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BANDWIDTH = 1.0 Hz |
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200 k |
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200 k |
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100 k |
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100 k |
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RESISTANCE |
50 k |
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RESISTANCE |
50 k |
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20 k |
0.5 dB |
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20 k |
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10 k |
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10 k |
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0.5 dB |
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5.0 k |
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5.0 k |
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SOURCE |
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1.0 dB |
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SOURCE |
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1.0 dB |
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2.0 k |
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2.0 k |
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1.0 k |
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2.0 dB |
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1.0 k |
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2.0 dB |
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, |
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, |
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S |
500 |
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S |
500 |
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R |
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3.0 dB |
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R |
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3.0 dB |
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200 |
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200 |
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5.0 dB |
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5.0 dB |
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100 |
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100 |
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10 |
20 |
30 |
50 |
70 |
100 |
200 300 |
500 700 |
1.0 k |
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10 |
20 |
30 |
50 |
70 |
100 |
200 |
300 |
500 700 |
1.0 k |
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IC, COLLECTOR CURRENT (μA) |
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IC, COLLECTOR CURRENT (μA) |
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Figure 3. Narrow Band, 100 Hz |
Figure 4. Narrow Band, 1.0 kHz |
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1.0 M |
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(OHMS) |
500 k |
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10 Hz to 15.7 kHz |
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200 k |
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100 k |
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RESISTANCE |
50 k |
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20 k |
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10 k |
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0.5 dB |
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5.0 k |
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SOURCE |
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2.0 k |
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1.0 dB |
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1.0 k |
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2.0 dB |
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, |
500 |
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S |
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R |
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3.0 dB |
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200 |
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5.0 dB |
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100 |
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20 |
30 |
50 |
70 |
100 |
200 |
300 |
500 |
700 |
1.0 k |
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10 |
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IC, COLLECTOR CURRENT (μA) |
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Figure 5. Wideband
Noise Figure is Defined as: |
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NF + 20 log10 |
en2 ) 4KTRS ) In 2RS2 1 2 |
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4KTRS |
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en |
= Noise Voltage of the Transistor referred to the input. (Figure 3) |
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In |
= Noise Current of the Transistor referred to the input. (Figure 4) |
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K |
= Boltzman's Constant (1.38 x 10±23 j/°K) |
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T |
= Temperature of the Source Resistance (°K) |
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RS = Source Resistance (Ohms)
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
3 |
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