MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD243B/D
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
• Collector ± Emitter Saturation Voltage Ð
VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc |
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• Collector Emitter Sustaining Voltage Ð |
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VCEO(sus) = 80 Vdc (Min) Ð BD243B, BD244B |
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VCEO(sus) = 100 Vdc (Min) Ð BD243C, BD244C |
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• High Current Gain Bandwidth Product |
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fT = 3.0 MHz (Min) @ IC = 500 mAdc |
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• Compact TO±220 AB Package |
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MAXIMUM RATINGS |
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BD243B |
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BD243C |
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Rating |
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Symbol |
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BD244B |
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BD244C |
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Unit |
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Collector±Emitter Voltage |
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VCEO |
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80 |
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100 |
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Vdc |
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Collector±Base Voltage |
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VCB |
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80 |
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100 |
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Vdc |
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Emitter±Base Voltage |
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VEB |
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5.0 |
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Vdc |
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Collector Current Ð Continuous |
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IC |
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6 |
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Adc |
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Peak |
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10 |
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Base Current |
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IB |
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2.0 |
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Adc |
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Total Device Dissipation |
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PD |
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Watts |
@ TC = 25_C |
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65 |
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Derate above 25_C |
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0.52 |
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W/ C |
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Operating and Storage Junction |
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TJ, Tstg |
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± 65 to +150 |
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_C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
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Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
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1.92 |
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_C/W |
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NPN
BD243B BD243C*
PNP
BD244B BD244C*
*Motorola Preferred Device
6 AMPERE
POWER TRANSISTORS COMPLEMENTARY SILICON
80 ± 100 VOLTS
65 WATTS
CASE 221A±06
TO±220AB
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80 |
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(WATTS) |
60 |
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DISSIPATION |
40 |
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, POWER |
20 |
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D |
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P |
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0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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0 |
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TC, CASE TEMPERATURE (°C) |
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Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
Motorola, Inc. 1995
BD243B |
BD243C |
BD244B |
BD244C |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
Symbol |
Min |
Max |
Unit |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
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(IC = 30 mAdc, IB = 0) |
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BD243B, BD244B |
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80 |
Ð |
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BD243C, BD244C |
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100 |
Ð |
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Collector Cutoff Current |
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ICEO |
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0.7 |
mAdc |
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(VCE = 60 Vdc, IB = 0) |
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BD243B, BD243C, BD244B, BD244C |
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Collector Cutoff Current |
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ICES |
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μAdc |
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(VCE = 80 Vdc, VEB = 0) |
BD243B, BD244B |
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Ð |
400 |
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(VCE = 100 Vdc, VEB = 0) |
BD243C, BD244C |
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Ð |
400 |
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Emitter Cutoff Current |
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IEBO |
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1.0 |
mAdc |
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(VBE = 5.0 Vdc, IC = 0) |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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Ð |
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(IC = 0.3 Adc, VCE = 4.0 Vdc) |
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30 |
Ð |
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(IC = 3.0 Adc, VCE = 4.0 Vdc) |
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15 |
Ð |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
Ð |
1.5 |
Vdc |
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(IC = 6.0 Adc, IB = 1.0 Adc) |
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Base±Emitter On Voltage |
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VBE(on) |
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2.0 |
Vdc |
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(IC = 6.0 Adc, VCE = 4.0 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Current±Gain Ð Bandwidth Product (2) |
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fT |
3.0 |
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MHz |
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(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) |
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Small±Signal Current Gain |
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hfe |
20 |
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(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) |
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(1)Pulse Test: Pulsewidth v 300 μs, Duty Cycle v 2.0%.
(2)fT = hfe •ftest
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VCC |
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± 30 V |
25 μs |
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RC |
+ 11 V |
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SCOPE |
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0 |
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RB |
± 9.0 V |
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D1 |
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tr, tf v 10 ns |
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DUTY CYCLE = 1.0% |
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± 4 V |
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RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE eg. 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA
Figure 2. Switching Time Test Circuit
t, TIME ( μs)
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.060.1
TJ = 25°C
VCC = 30 V
IC/IB = 10
tr
td @ VBE(off) = 5.0 V
0.2 |
0.4 |
0.6 |
1.0 |
2.0 |
4.0 |
6.0 |
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn±On Time
2 |
Motorola Bipolar Power Transistor Device Data |
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