MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BCX17LT1/D
General Purpose
Transistors
COLLECTOR 3 |
PNP |
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BASE |
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BCX17LT1 |
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BCX18LT1 |
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2 EMITTER |
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NPN |
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COLLECTOR 3 |
BCX19LT1 |
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1 |
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BCX20LT1 |
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BASE |
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Voltage and current are negative |
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for PNP transistors |
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2 EMITTER |
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MAXIMUM RATINGS |
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1 |
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Value |
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2 |
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BCX17LT1 |
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BCX18LT1 |
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CASE 318 ± 08, STYLE 6 |
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Rating |
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Symbol |
BCX19LT1 |
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BCX20LT1 |
Unit |
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SOT± 23 (TO ± 236AB) |
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Collector±Emitter Voltage |
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VCEO |
45 |
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25 |
Vdc |
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Collector±Base Voltage |
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VCBO |
50 |
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30 |
Vdc |
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Emitter±Base Voltage |
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VEBO |
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5.0 |
Vdc |
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Collector Current Ð Continuous |
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IC |
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500 |
mAdc |
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DEVICE MARKING |
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BCX17LT1 = T1; BCX18LT1 = T2; BCX19LT1 = U1; BCX20LT1 = U2 |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
Max |
Unit |
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Total Device Dissipation FR-5 Board (1) |
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P |
225 |
mW |
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TA = 25°C |
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D |
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mW/°C |
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Derate above 25°C |
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1.8 |
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Thermal Resistance, Junction to Ambient |
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RθJA |
556 |
°C/W |
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Total Device Dissipation |
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PD |
300 |
mW |
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Alumina Substrate, (2) T = 25°C |
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A |
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Derate above 25°C |
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2.4 |
mW/°C |
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Thermal Resistance, Junction to Ambient |
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RθJA |
417 |
°C/W |
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Junction and Storage Temperature |
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TJ, Tstg |
± 55 to +150 |
°C |
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1.FR±5 = 1.0 x 0.75 x 0.062 in.
2.Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Thermal Clad is a trademark of the Bergquist Company
Motorola, Inc. 1996
PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS
Collector±Emitter Breakdown Voltage |
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V(BR)CEO |
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Vdc |
(IC = 10 mAdc, IB = 0) |
BCX17, 19 |
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45 |
Ð |
Ð |
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BCX18, 20 |
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25 |
Ð |
Ð |
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Collector±Emitter Breakdown Voltage |
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V(BR)CES |
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Vdc |
(IC = 10 μAdc, IC = 0) |
BCX17, 19 |
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50 |
Ð |
Ð |
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BCX18, 20 |
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30 |
Ð |
Ð |
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Collector Cutoff Current |
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ICBO |
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(VCB = 20 Vdc, IE = 0) |
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Ð |
Ð |
100 |
nAdc |
(VCB = 20 Vdc, IE = 0, TA = 150°C) |
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Ð |
Ð |
5.0 |
μAdc |
Emitter Cutoff Current |
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IEBO |
Ð |
Ð |
10 |
μAdc |
(VEB = 5.0 Vdc, IC = 0) |
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ON CHARACTERISTICS |
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DC Current Gain |
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hFE |
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Ð |
(IC = 100 mAdc, VCE = 1.0 Vdc) |
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100 |
Ð |
600 |
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(IC = 300 mAdc, VCE = 1.0 Vdc) |
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70 |
Ð |
Ð |
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(IC = 500 mAdc, VCE = 1.0 Vdc) |
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40 |
Ð |
Ð |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
Ð |
Ð |
0.62 |
Vdc |
(IC = 500 mAdc, IB = 50 mAdc) |
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Base±Emitter On Voltage |
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VBE(on) |
Ð |
Ð |
1.2 |
Vdc |
(IC = 500 mAdc, VCE = 1.0 Vdc) |
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2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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