MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC856AWT1/D
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose amplifier |
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applications. They are housed in the SOT±323/SC±70 which is |
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designed for low power surface mount applications. |
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BASE |
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MAXIMUM RATINGS |
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EMITTER |
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Rating |
Symbol |
BC856 |
BC857 |
BC858 |
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Unit |
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Collector± Emitter Voltage |
VCEO |
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±65 |
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±45 |
±30 |
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V |
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Collector± Base Voltage |
VCBO |
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±80 |
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±50 |
±30 |
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V |
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Emitter± Base Voltage |
VEBO |
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±5.0 |
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±5.0 |
±5.0 |
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V |
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Collector Current Ð Continuous |
IC |
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±100 |
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±100 |
±100 |
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mAdc |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
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Unit |
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Total Device Dissipation FR±5 Board, (1) |
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PD |
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150 |
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mW |
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TA = 25°C |
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Thermal Resistance, Junction to Ambient |
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RqJA |
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833 |
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°C/W |
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Junction and Storage Temperature |
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TJ, Tstg |
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± 55 to +150 |
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°C |
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DEVICE MARKING |
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BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F; |
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BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) |
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BC856AWT1,BWT1
BC857AWT1,BWT1
BC858AWT1,BWT1,
CWT1
Motorola Preferred Devices
3
1
2
CASE 419±02, STYLE 3
SOT±323/SC±70
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage |
BC856 Series |
V(BR)CEO |
±65 |
Ð |
Ð |
V |
(IC = ±10 mA) |
BC857 Series |
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±45 |
Ð |
Ð |
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BC858 Series |
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±30 |
Ð |
Ð |
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Collector± Emitter Breakdown Voltage |
BC856 Series |
V(BR)CES |
±80 |
Ð |
Ð |
V |
(IC = ±10 μA, VEB = 0) |
BC857 Series |
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±50 |
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Ð |
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BC858 Series |
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±30 |
Ð |
Ð |
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Collector± Base Breakdown Voltage |
BC856 Series |
V(BR)CBO |
±80 |
Ð |
Ð |
V |
(IC = ±10 mA) |
BC857 Series |
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±50 |
Ð |
Ð |
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BC858 Series |
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±30 |
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Ð |
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Emitter± Base Breakdown Voltage |
BC856 Series |
V(BR)EBO |
±5.0 |
Ð |
Ð |
V |
(IE = ±1.0 mA) |
BC857 Series |
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±5.0 |
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Ð |
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BC858 Series |
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±5.0 |
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Ð |
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Collector Cutoff Current (VCB = ±30 V) |
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ICBO |
Ð |
Ð |
±15 |
nA |
Collector Cutoff Current (VCB = ±30 V, TA = 150°C) |
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Ð |
Ð |
±4.0 |
μA |
1. FR±5 = 1.0 x 0.75 x 0.062 in
Thermal Clad is a registered trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
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Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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ON CHARACTERISTICS |
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DC Current Gain |
BC856A, BC857A, BC585A |
hFE |
Ð |
90 |
Ð |
Ð |
(IC = ±10 μA, VCE = ±5.0 V) |
BC856A, BC857A, BC858A |
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150 |
Ð |
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BC858C |
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Ð |
270 |
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(IC = ±2.0 mA, VCE = ±5.0 V) |
BC856A, BC857A, BC858A |
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125 |
180 |
250 |
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BC856B, BC857B, BC858B |
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220 |
290 |
475 |
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BC858C |
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420 |
520 |
800 |
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Collector± Emitter Saturation Voltage |
VCE(sat) |
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V |
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(IC = ±10 mA, IB = ±0.5 mA) |
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±0.3 |
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(IC = ±100 mA, IB = ±5.0 mA) |
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Ð |
Ð |
±0.65 |
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Base ± Emitter Saturation Voltage |
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VBE(sat) |
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V |
(IC = ±10 mA, IB = ±0.5 mA) |
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Ð |
±0.7 |
Ð |
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(IC = ±100 mA, IB = ±5.0 mA) |
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Ð |
±0.9 |
Ð |
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Base ± Emitter On Voltage |
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VBE(on) |
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V |
(IC = ±2.0 mA, VCE = ±5.0 V) |
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±0.6 |
Ð |
±0.75 |
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(IC = ±10 mA, VCE = ±5.0 V) |
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±0.82 |
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SMALL± SIGNAL CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product |
fT |
100 |
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Ð |
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(IC = ±10 mA, VCE = ±5.0 Vdc, f = 100 MHz) |
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Output Capacitance |
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Cob |
Ð |
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4.5 |
pF |
(VCB = ±10 V, f = 1.0 MHz) |
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Noise Figure |
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NF |
Ð |
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10 |
dB |
(IC = ±0.2 mA, VCE = ±5.0 Vdc, RS = 2.0 kΩ, |
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f = 1.0 kHz, BW = 200 Hz) |
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2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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BC856AWT1,BWT1 |
BC857AWT1,BWT1 |
BC858AWT1,BWT1,CWT1 |
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BC857/BC858 |
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2.0 |
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±1.0 |
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GAIN |
1.5 |
VCE = ±10 V |
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±0.9 |
TA = 25°C |
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VBE(sat) @ IC/IB = 10 |
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TA = 25°C |
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±0.8 |
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NORMALIZED DC CURRENT |
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1.0 |
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V, VOLTAGE (VOLTS) |
±0.7 |
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0.7 |
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±0.6 |
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VBE(on) @ VCE = ±10 V |
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±0.5 |
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0.5 |
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±0.4 |
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±0.3 |
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0.3 |
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±0.2 |
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, |
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FE |
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VCE(sat) @ IC/IB = 10 |
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±0.1 |
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h |
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0.2 |
±0.5 |
±1.0 |
±2.0 |
±5.0 |
±10 |
±20 |
±50 |
±100 |
±200 |
0 |
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±0.2 |
±0.5 |
±1.0 |
±2.0 |
±5.0 |
±10 |
±20 |
±50 |
±100 |
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±0.2 |
±0.1 |
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IC, COLLECTOR CURRENT (mAdc) |
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IC, COLLECTOR CURRENT (mAdc) |
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Figure 1. Normalized DC Current Gain |
Figure 2. ªSaturationº and ªOnº Voltages |
(V) |
±2.0 |
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TA = 25°C |
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VOLTAGE |
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±1.6 |
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COLLECTOR±EMITTER |
±1.2 |
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±0.8 |
IC = |
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IC = ±50 mA |
IC = ±200 mA |
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±10 mA |
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IC = ±20 mA |
IC = ±100 mA |
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±0.4 |
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, |
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CE |
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V |
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0 |
±0.02 |
±0.1 |
±1.0 |
±10 |
±20 |
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IB, BASE CURRENT (mA) |
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Figure 3. Collector Saturation Region
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10 |
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7.0 |
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Cib |
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TA = 25°C |
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(pF) |
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5.0 |
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CAPACITANCE |
3.0 |
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Cob |
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2.0 |
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C, |
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1.0 |
±0.6 |
±1.0 |
±2.0 |
±4.0 |
±6.0 |
±10 |
±20 |
±30 |
±40 |
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±0.4 |
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VR, REVERSE VOLTAGE (VOLTS) |
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Figure 5. Capacitances
°C) |
1.0 |
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±55°C to +125°C |
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(mV/ |
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1.2 |
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COEFFICIENT |
1.6 |
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2.0 |
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, TEMPERATURE |
2.4 |
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2.8 |
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VB |
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θ |
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±0.2 |
±1.0 |
±10 |
±100 |
IC, COLLECTOR CURRENT (mA)
Figure 4. Base±Emitter Temperature Coefficient
(MHz) |
400 |
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PRODUCT |
300 |
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200 |
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± BANDWIDTH |
150 |
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VCE = ±10 V |
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100 |
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TA = 25°C |
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80 |
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60 |
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,CURRENT±GAIN |
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40 |
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30 |
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20 |
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T |
±1.0 |
±2.0 |
±3.0 |
±5.0 |
±10 |
±20 |
±30 |
±50 |
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f |
±0.5 |
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IC, COLLECTOR CURRENT (mAdc)
Figure 6. Current±Gain ± Bandwidth Product
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
3 |