MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BDV65B/D
Complementary Silicon Plastic
Power Darlingtons
. . . for use as output devices in complementary general purpose amplifier applications.
• High DC Current Gain
HFE = 1000 (min.) @ 5 Adc
• Monolithic Construction with Built±in Base Emitter Shunt Resistors
MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
|
|
|
|
Collector±Emitter Voltage |
VCEO |
100 |
Vdc |
Collector±Base Voltage |
VCB |
100 |
Vdc |
Emitter±Base Voltage |
VEB |
5.0 |
Vdc |
Collector Current Ð Continuous |
IC |
10 |
Adc |
Ð Peak |
|
20 |
|
|
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|
|
Base Current |
IB |
0.5 |
Adc |
Total Device Dissipation |
PD |
125 |
Watts |
@ TC = 25_C |
|
||
Derate above 25_C |
|
1.0 |
W/_C |
|
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|
Operating and Storage Junction |
TJ, Tstg |
± 65 to +150 |
_C |
Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
|
|
|
|
Thermal Resistance, Junction to Case |
θJC |
1.0 |
_C/W |
1.0
0.8
FACTOR |
0.6 |
DERATING |
0.4 |
|
|
|
0.2 |
|
0 |
0 |
25 |
50 |
75 |
100 |
125 |
150 |
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
REV 7
NPN
BDV65B
PNP
BDV64B
DARLINGTONS
10 AMPERES
COMPLEMENTARY
SILICON
POWER TRANSISTORS 60 ± 80 ± 100 ± 120 VOLTS 125 WATTS
CASE 340D±01
SOT 93, TO±218 TYPE
Motorola, Inc. 1995
BDV65B BDV64B
ELECTRICAL CHARACTERISTICS
Characteristic |
Symbol |
Min |
Max |
Unit |
|
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|
|
OFF CHARACTERISTICS |
|
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Collector±Emitter Sustaining Voltage (1) |
VCEO(sus) |
100 |
Ð |
Vdc |
(IC = 30 mAdc, IB = 0) |
|
|
|
|
Collector Cutoff Current |
ICEO |
Ð |
1.0 |
mAdc |
(VCE = 50 Vdc, IB = 0) |
|
|
|
|
Collector Cutoff Current |
ICBO |
Ð |
0.4 |
mAdc |
(VCB = 100 Vdc, IE = 0) |
|
|
|
|
Collector Cutoff Current |
ICBO |
Ð |
2.0 |
mAdc |
(VCB = 50 Vdc, IE = 0, TC = 150_C) |
|
|
|
|
Emitter Cutoff Current |
IEBO |
Ð |
5.0 |
mAdc |
(VBE = 5.0 Vdc, IC = 0) |
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ON CHARACTERISTICS |
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DC Current Gain |
hFE |
1000 |
Ð |
Ð |
(IC = 5.0 Adc, VCE = 4.0 Vdc) |
|
|
|
|
Collector±Emitter Saturation Voltage |
VCE(sat) |
Ð |
2.0 |
Vdc |
(IC = 5.0 Adc, IB = 0.02 Adc) |
|
|
|
|
Base±Emitter Saturation Voltage |
VBE(on) |
Ð |
2.5 |
Vdc |
(IC = 5.0 Adc, VCE = 4.0 Vdc) |
|
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|
2 |
Motorola Bipolar Power Transistor Device Data |
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