Motorola BC850BLT1, BC850ALT1, BC849CLT1, BC850CLT1, BC849BLT1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BC846ALT1/D

General Purpose Transistors

NPN Silicon

COLLECTOR

3

1

BASE

2

MAXIMUM RATINGS

EMITTER

BC847

BC848

Rating

Symbol

BC846

BC850

BC849

Unit

Collector± Emitter Voltage

VCEO

65

45

30

V

Collector± Base Voltage

VCBO

80

50

30

V

Emitter± Base Voltage

VEBO

6.0

6.0

5.0

V

Collector Current Ð Continuous

IC

100

100

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR±5 Board, (1)

PD

TA = 25°C

225

mW

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

RqJA

556

°C/W

Total Device Dissipation

PD

Alumina Substrate, (2) TA = 25°C

300

mW

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

± 55 to +150

°C

DEVICE MARKING

BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;

BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

BC846ALT1,BLT1

BC847ALT1, BLT1,CLT1 thru BC850ALT1,BLT1, CLT1

BC846, BC847 and BC848 are

Motorola Preferred Devices

1

2

CASE 318 ± 08, STYLE 6

SOT± 23 (TO ± 236AB)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage		BC846A,B		V(BR)CEO	65	Ð	Ð	V
(IC = 10 mA)		BC847A,B,C, BC850A,B,C			45	Ð	Ð
		BC848A,B,C, BC849A,B,C			30	Ð	Ð
Collector± Emitter Breakdown Voltage		BC846A,B		V(BR)CES	80	Ð	Ð	V
(IC = 10 μA, VEB = 0)		BC847A,B,C, BC850A,B,C			50	Ð	Ð
		BC848A,B,C, BC849A,B,C			30	Ð	Ð
Collector± Base Breakdown Voltage		BC846A,B		V(BR)CBO	80	Ð	Ð	V
(IC = 10 mA)		BC847A,B,C, BC850A,B,C			50	Ð	Ð
		BC848A,B,C, BC849A,B,C			30	Ð	Ð
Emitter± Base Breakdown Voltage		BC846A,B		V(BR)EBO	6.0	Ð	Ð	V
(IE = 1.0 mA)		BC847A,B,C			6.0	Ð	Ð
		BC848A,B,C, BC849A,B,C, BC850A,B,C			5.0	Ð	Ð
Collector Cutoff Current (VCB = 30 V)				ICBO	Ð	Ð	15	nA
(VCB = 30 V, TA = 150°C)					Ð	Ð	5.0	μA
1. FR±5 = 1.0 x 0.75 x 0.062 in	2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1996

BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

	Characteristic	Symbol	Min	Typ	Max	Unit
ON CHARACTERISTICS
DC Current Gain	BC846A, BC847A, BC848A	hFE	Ð	90	Ð	Ð
(IC = 10 μA, VCE = 5.0 V)	BC846B, BC847B, BC848B		Ð	150	Ð
	BC847C, BC848C		Ð	270	Ð
(IC = 2.0 mA, VCE = 5.0 V)	BC846A, BC847A, BC848A, BC849A, BC850A		110	180	220
	BC846B, BC847B, BC848B, BC849B, BC850B		200	290	450
	BC847C, BC848C, BC849C, BC850C		420	520	800
Collector± Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)		VCE(sat)	Ð	Ð	0.25	V
Collector± Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)			Ð	Ð	0.6
Base ± Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)		VBE(sat)	Ð	0.7	Ð	V
Base ± Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)			Ð	0.9	Ð
Base ± Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)		VBE(on)	580	660	700	mV
Base ± Emitter Voltage (IC = 10 mA, VCE = 5.0 V)			Ð	Ð	770
SMALL± SIGNAL CHARACTERISTICS
Current± Gain Ð Bandwidth Product		fT	100	Ð	Ð	MHz
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)		Cobo	Ð	Ð	4.5	pF
Noise Figure (IC = 0.2 mA,	BC846A, BC847A, BC848A	NF				dB
VCE = 5.0 Vdc, RS = 2.0 kΩ,	BC846B, BC847B, BC848B
f = 1.0 kHz, BW = 200 Hz)	BC847C, BC848C		Ð	Ð	10
	BC849A,B,C, BC850A,B,C		Ð	Ð	4.0

	2.0
GAIN	1.5							VCE = 10 V
								TA = 25°C
CURRENT	1.0
	0.8
DC	0.6
,NORMALIZED
	0.4
	0.3
FE
h
	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200
	0.2

IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

(V)	2.0
			TA = 25°C
VOLTAGE
	1.6
			IC = 200 mA
COLLECTOR±EMITTER
	1.2
	IC =	IC = IC = 50 mA	IC = 100 mA
	10 mA 20 mA
	0.8
	0.4
,
CE
V
	0	0.1	1.0	10	20
	0.02

IB, BASE CURRENT (mA)

Figure 3. Collector Saturation Region

	1.0
	0.9	TA = 25°C
	0.8		VBE(sat) @ IC/IB = 10
(VOLTS)	0.7
	0.6			VBE(on) @ VCE = 10 V
V, VOLTAGE	0.5
	0.4
	0.3
	0.2			VCE(sat) @ IC/IB = 10
	0.1
	0	0.2 0.3	0.5 0.7 1.0	2.0 3.0	5.0 7.0 10	20	30	50	70 100
	0.1
			IC, COLLECTOR CURRENT (mAdc)

Figure 2. ªSaturationº and ªOnº Voltages

°C)	1.0
		±55°C to +125°C
(mV/	1.2
COEFFICIENT	1.6
	2.0
, TEMPERATURE	2.4
	2.8
VB
θ
	0.2	1.0	10	100
		IC, COLLECTOR CURRENT (mA)

Figure 4. Base±Emitter Temperature Coefficient

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data