MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC807±16LT1/D
General Purpose Transistors
PNP Silicon
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COLLECTOR |
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BASE |
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1 |
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MAXIMUM RATINGS |
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EMITTER |
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Rating |
Symbol |
Value |
Unit |
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Collector± Emitter Voltage |
VCEO |
±45 |
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V |
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Collector± Base Voltage |
VCBO |
±50 |
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V |
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Emitter± Base Voltage |
VEBO |
±5.0 |
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V |
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Collector Current Ð Continuous |
IC |
±500 |
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mAdc |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Total Device Dissipation FR±5 Board, (1) |
PD |
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TA = 25°C |
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225 |
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mW |
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Derate above 25°C |
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1.8 |
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mW/°C |
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Thermal Resistance, Junction to Ambient |
RqJA |
556 |
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°C/W |
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Total Device Dissipation |
PD |
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Alumina Substrate, (2) TA = 25°C |
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300 |
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mW |
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Derate above 25°C |
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2.4 |
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mW/°C |
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Thermal Resistance, Junction to Ambient |
RqJA |
417 |
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°C/W |
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Junction and Storage Temperature |
TJ, Tstg |
± 55 to +150 |
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°C |
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DEVICE MARKING
BC807±16LT1 = 5A; BC807±25LT1 = 5B; BC807±40LT1 = 5C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
BC807-16LT1 BC807-25LT1 BC807-40LT1
1
2
CASE 318 ± 08, STYLE 6
SOT± 23 (TO ± 236AB)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS
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Collector± Emitter Breakdown Voltage |
V(BR)CEO |
±45 |
Ð |
Ð |
V |
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(IC = ±10 mA) |
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Collector± Emitter Breakdown Voltage |
V(BR)CES |
±50 |
Ð |
Ð |
V |
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(VEB = 0, IC = ±10 μA) |
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Emitter± Base Breakdown Voltage |
V(BR)EBO |
±5.0 |
Ð |
Ð |
V |
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(IE = ±1.0 mA) |
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Collector Cutoff Current |
ICBO |
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(VCB = ±20 V) |
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Ð |
Ð |
±100 |
nA |
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(VCB = ±20 V, TJ = 150°C) |
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Ð |
Ð |
±5.0 |
μA |
1. |
FR±5 = 1.0 x 0.75 x 0.062 in. |
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2. |
Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. |
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Thermal Clad is a trademark of the Bergquist Company.
Motorola, Inc. 1996
BC807-16LT1 BC807-25LT1 BC807-40LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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ON CHARACTERISTICS
DC Current Gain |
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hFE |
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Ð |
(IC = ±100 mA, VCE = ±1.0 V) |
BC807±16 |
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100 |
Ð |
250 |
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BC807±25 |
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160 |
Ð |
400 |
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BC807±40 |
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250 |
Ð |
600 |
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(IC = ±500 mA, VCE = ±1.0 V) |
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40 |
Ð |
Ð |
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Collector± Emitter Saturation Voltage |
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VCE(sat) |
Ð |
Ð |
±0.7 |
V |
(IC = ±500 mA, IB = ±50 mA) |
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Base ± Emitter On Voltage |
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VBE(on) |
Ð |
Ð |
±1.2 |
V |
(IC = ±500 mA, IB = ±1.0 V) |
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SMALL± SIGNAL CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product |
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fT |
200 |
Ð |
Ð |
MHz |
(IC = ±10 mA, VCE = ±5.0 Vdc, f = 100 MHz) |
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Output Capacitance |
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Cobo |
Ð |
10 |
Ð |
pF |
(VCB = ±10 V, f = 1.0 MHz) |
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2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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